Infineon IDY10S120 2nd generation thinq! sic schottky diode Datasheet

SiC
Silicon Carbide Diode
2nd Generation thinQ!™
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Data Sheet
Rev. 2.0, 2011-02-28
Final
Industrial & Multimarket
2nd Generation thinQ!™ SiC Schottky Diode
1
IDY10S120
Description
The second generation of Infineon SiC Schottky diodes has emerged over the years as the
industry standard. The IDYxxS120 products are extending the already broad portfolio with
the new TO-247HC (high creepage) package.
The new package layout is fully compatible with the industry standard TO247, and can
therefore easily be placed in already existing designs, with no extra efforts.
The higher creepage distance increases the safety margin against the risk of short circuits,
especially arcing, which might be triggered by the presence of dust or dirt inside the system.
This reduces the need of additional chemical (silicone gel or creams) or mechanical (sheaths
or foils) solutions to lower the pollution level between the leads, with all consequent benefits
of a lean and faster manufacturing process
Features
•
•
•
•
•
•
•
•
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Optimized for high temperature operation
Benefits
•
•
•
•
•
•
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures and less fans
Package design with high creepage distance
Reduced EMI
Applications
•
•
Solar applications; UPS; Motor Drives;
SMPS e.g.; CCM PFC
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
1200
V
QC
14.4
nC
IF @ TC < 150°C 10
Table 2
A
Pin Definition
Pin 1
Pin2
Pin 3
A
C
A
Type / Ordering Code
Package
IDY10S120
PG-TO247HC-3
Marking
D10S120
Related Links
IFX SiC Diodes Webpage
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
4
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Maximum ratings
2
Maximum ratings
Table 3
Maximum ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
A
TC= < 150°C
(leg/device)
Min.
Typ.
Max.
Continuous forward current
IF
-
-
5/10
Surge non-repetitive
IF, SM
-
-
29/58
TC= 25°C, tp = 10 ms
-
-
25/48
TC= 150°C, tp = 10 ms
TC= 25°C, tp = 10 µs
forward current, sine halfwave
Non-repetitive peak forward current
IF, max
-
-
125/250
i² t value
∫i²dt
-
-
4/16
-
A²s
TC= 25°C, tp = 10 ms
3/12
TC= 150°C, tp = 10 ms
Repetitive peak reverse voltage
VRRM
-
-
1200
V
Tj= 25°C
Diode dv/dt ruggedness
dv/dt
-
-
50
V/ns
VR= 0...960 V
Power dissipation
Ptot
-
-
75/150
W
TC= 25 °C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
-
0.6
Ncm
Mounting torque
3
Thermal characteristics
Table 4
Thermal characteristics
Parameter
Symbol
Values
M3 screws
Maximum of mounting
processes:3
Unit
(leg/device)
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
2/1
Thermal resistance, junction ambient
RthJA
-
-
40
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Final Data Sheet
5
Note /
Test Condition
K/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 5
Static characteristics
Parameter
Symbol
Values
Unit
Note / Test Condition
V
Tj= 25 °C, IR= 0.1 mA
(leg/device)
Min.
Typ.
Max.
DC blocking voltage
VDC
1200
-
-
Diode forward voltage
VF
-
1.65
1.8
-
2.55
-
5/10
120/240
-
20/40
500/1000
Reverse current
Table 6
IR
IF= 10 A, Tj= 25 °C
IF= 10 A, Tj= 150 °C
IR= 1200 V, Tj=25 °C
µA
IR= 1200 V, Tj=150 °C
AC characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
VR= 400 V, F ≤I Fmax
(leg/device)
Total capacitive charge
1)
Switching time
Min.
Typ.
Max.
Qc
-
7.2/14.4
-
nC
tc
-
-
<10
ns
C
-
250/500
-
pF
-
20/40
-
VR= 300 V, f= 1 MHz
-
18/36
-
VR= 600 V, f= 1 MHz
diF /dt =200 A/μs,
Tj=150 °C
VR= 1 V, f= 1 MHz
1) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from
trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
Final Data Sheet
6
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
5
Electrical characteristics diagrams
Electrical characteristics diagrams
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 7
Power dissipation (per leg)
Typ. forward characteristic (per leg)
Ptot = f(TC); parameter: RthJC(max) ;
IF=f(VF); tp=400 µs; parameter: Tj ; IF=f(TC);
per device the values double
per device the values double
Table 8
Diode forward current (per leg)
Diode forward current (per device)
Tj≤ 175 °C; parameter: RthJC(max) ; VF (max); D=tP /T
Final Data Sheet
Tj≤ 175 °C; parameter: RthJC(max) ; VF (max); D=tP /T
7
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Electrical characteristics diagrams
Table 9
Typ. capacitance charge vs. current slope1)
(per leg)
Typ. reverse current vs. reverse voltage (per leg)
QD=f(diF/dt)4); Tj = 150 °C; IF ≤ IF max;
per device the values double
IR =f(VR); parameter: Tj ; per device the values double
1) Only capacitive charge occuring, guaranteed by design
Table 10
Typ. transient thermal impedance (per leg)
Typ. transient thermal impedance (per device)
Zthjc=f(tP ) ; parameter: D = tP /T
Zthjc=f(tP ) ; parameter: D = tP /T
Final Data Sheet
8
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Electrical characteristics diagrams
Table 11
Typ. C stored energy (per leg)
Typ. capacitance vs. reverse voltage (per leg)
EC=f(VR); per device the values double
C=f(VR); TC=25 °C, f=1 MHz;
per device the values double
Final Data Sheet
9
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Package outlines
6
Package outlines
Figure 1
Dimensions in mm/inches
Final Data Sheet
10
Rev. 2.0, 2011-02-28
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Revision History
7
Revision History
2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode
Revision History: 2011-02-28, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last revision)
2.0
Release of final data sheet
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Edition 2011-02-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Final Data Sheet
11
Rev. 2.0, 2011-02-28
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