IGP15N60T q TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGP15N60T G E PG-TO-220-3-1 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 15A 1.5V 175°C G15T60 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value 600 Unit V A TC = 25°C 30 TC = 100°C 15 Pulsed collector current, tp limited by Tjmax ICpul s 45 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 45 Gate-emitter voltage VGE ±20 V tSC 5 µs Power dissipation TC = 25°C Ptot 130 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 2) Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.2 Sep. 07 IGP15N60T q TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit K/W Characteristic IGBT thermal resistance, junction – case RthJC 1.15 Thermal resistance, junction – ambient RthJA 62 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 °C - 1.5 2.05 T j =1 7 5° C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 15 A Gate-emitter threshold voltage VGE(th) I C = 21 0µ A , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 °C - - 40 T j =1 7 5° C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 15 A - 8.7 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 860 - Output capacitance Coss V G E = 0V , - 55 - Reverse transfer capacitance Crss f= 1 MH z - 24 - Gate charge QGate V C C = 48 0 V, I C =1 5 A - 87 - nC - 7 - nH - 137.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C ≤ 5 µs V C C = 4 0 0 V, T j = 15 0 °C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.2 Sep. 07 IGP15N60T q TrenchStop® Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 11 - - 188 - - 50 - - 0.22 - - 0.35 - - 0.57 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 1 5 A, V G E = 0 /1 5 V, R G = 15 Ω, 1) L σ =1 5 4n H, 1) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 15 - - 212 - - 79 - - 0.34 - - 0.47 - - 0.81 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) T j =1 7 5° C, V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , RG= 15 Ω 1) L σ =1 5 4n H, 1) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. ns mJ Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.2 Sep. 07 IGP15N60T q TrenchStop® Series tp =2µs 10µs T C =80°C 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A T C =110°C 20A Ic 10A 10A 50µs 1A 1ms DC 10ms Ic 0A 10H z 100H z 1kHz 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 15Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 30A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 120W 100W 80W 60W 40W 20A 10A 20W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.2 Sep. 07 IGP15N60T q TrenchStop® Series 40A 40A 30A 35A V GE =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 35A 15V 25A 13V 11V 20A 9V 15A 7V 10A 5A 15V 13V 25A 11V 20A 9V 15A 7V 10A 0A 0V 1V 2V 3V 0V 35A 30A 25A 20A 15A 10A T J = 1 7 5 °C 5A 2 5 °C 0V 2V 4V 6V 8V 2V 3V 2.5V IC =30A 2.0V 1.5V IC =15A 1.0V IC =7.5A 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 30A 5A 0A 0A V GE =20V 5 Rev. 2.2 Sep. 07 IGP15N60T q TrenchStop® Series t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns 100ns tf tr t d(on) tr 1ns 0A 5A 10A 15A 20A 10ns 2 5A 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 15Ω, Dynamic test circuit in Figure E) 20Ω 30Ω 40Ω 50Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf t d(on) 10ns VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V m ax. typ. 5V 4V m in. 3V 2V 1V tr 25°C 50°C 75°C 0V -50°C 100°C 125°C 15 0°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA) 6 Rev. 2.2 Sep. 07 TrenchStop® Series 1.6 mJ *) E on an d E ts in c lu d e lo s s es 1 .6m J *) E on and E ts include losses due to diode recovery E ts * 1 .2m J E off 0 .8m J E on * 0 .4m J E, SWITCHING ENERGY LOSSES d u e to d io de re c ov e ry E, SWITCHING ENERGY LOSSES IGP15N60T q E ts* 1.4 mJ 1.2 mJ 1.0 mJ 0.8 mJ 0.6 mJ E off 0.4 mJ 0 .0m J 0A 5A 10A 1 5A 20 A 0.2 mJ 25 A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 15Ω, Dynamic test circuit in Figure E) E on* 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) 0.9mJ 1.2m J *) E on and E ts include losses E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 0.8mJ 0.7mJ 0.6mJ E ts* 0.5mJ 0.4mJ E off 0.3mJ 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * E on* 0.2mJ 25°C due to diode recovery 1.0m J 50°C 0.0m J 300V 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG = 15Ω, Dynamic test circuit in Figure E) Power Semiconductors 350V 400V 450V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 15A, RG = 15Ω, Dynamic test circuit in Figure E) 7 Rev. 2.2 Sep. 07 IGP15N60T q TrenchStop® Series 15V C iss 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 1nF 480V 10V 100pF C oss 5V C rss 0V 0nC 20nC 40nC 60nC 80nC 10pF 100nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) 0V 10V 20V 30V 40V 50V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 200A 150A 100A 50A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.2 Sep. 07 TrenchStop® Series IGP15N60T q ZthJC, TRANSIENT THERMAL RESISTANCE 0 10 K/W D =0.5 0.2 R,(K/W) 0.13265 0.37007 0.30032 0.34701 0.1 -1 10 K/W R1 τ, (s) 5.67*10-2 1.558*10-2 2.147*10-3 2.724*10-4 R2 0.05 0.02 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 0.01 single pulse -2 10 K/W 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Rev. 2.2 Sep. 07 TrenchStop® Series IGP15N60T q PG-TO-220-3-1 Power Semiconductors 10 Rev. 2.2 Sep. 07 IGP15N60T q TrenchStop® Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =154nH an d Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.2 Sep. 07 TrenchStop® Series IGP15N60T q Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 9/12/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.2 Sep. 07