Infineon IGP30N60T Low loss igbt in trenchstop and fieldstop technology Datasheet

IGP30N60T
IGW30N60T
TrenchStop® Series
Low Loss IGBT in TrenchStop® and Fieldstop technology
•
•
•
•
•
•
•
•
•
•
•
C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Frequency Converters
- Uninterruptible Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
PG-TO-220-3-1
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
PG-TO-247-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
IGP30N60T
600V
30A
1.5V
175°C
G30T60
PG-TO-220-3-1
IGW30N60T
600V
30A
1.5V
175°C
G30T60
PG-TO-247-3
Type
E
Package
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current, limited by Tjmax
IC
Value
600
Unit
V
A
TC = 25°C
60
TC = 100°C
30
Pulsed collector current, tp limited by Tjmax
ICpuls
90
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
-
90
Gate-emitter voltage
VGE
±20
V
tSC
5
µs
Power dissipation TC = 25°C
Ptot
187
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Short circuit withstand time
2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
1
2)
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.6 Nov. 09
IGP30N60T
IGW30N60T
TrenchStop® Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
0.80
K/W
Characteristic
IGBT thermal resistance,
RthJC
junction – case
Thermal resistance,
RthJA
junction – ambient
PG-TO-220-3-1
62
PG-TO-247-3-21
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
T j = 25°C
-
1.5
2.05
T j = 175 °C
-
1.9
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =0.2mA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V, I C =30A
Gate-emitter threshold voltage
VGE(th)
I C =0 .43mA,
V C E =V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
VGE=0V
µA
T j = 25°C
-
-
40
T j = 175 °C
-
-
1000
Gate-emitter leakage current
IGES
V C E = 0 V , V G E =20V
-
-
100
nA
Transconductance
gfs
V C E =20V, I C =30A
-
16.7
-
S
Integrated gate resistor
RGint
-
Ω
Dynamic Characteristic
Input capacitance
Ciss
V C E =25V,
-
1630
-
Output capacitance
Coss
VGE=0V,
-
108
-
Reverse transfer capacitance
Crss
f=1MHz
-
50
-
Gate charge
QGate
V C C = 48 0 V, I C =30A
-
167
-
nC
PG- TO- 220- 3-1
-
7
-
nH
PG- TO- 247- 3-21
-
13
-
V G E =15V,t S C ≤5 µs
V C C = 400 V,
T j = 1 50° C
-
275
-
pF
V G E =15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
1)
Short circuit collector current
1)
IC(SC)
A
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.6 Nov. 09
IGP30N60T
IGW30N60T
TrenchStop® Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
23
-
-
21
-
-
254
-
-
46
-
-
0.69
-
-
0.77
-
-
1.46
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 25°C ,
V C C = 40 0 V,I C =30A,
V G E = 0 /1 5 V,
R G = 1 0 .6 Ω ,
L σ 1 ) =1 36nH,
C σ 1 ) =39pF
Energy losses include
“tail” and diode
reverse recovery. 2)
ns
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
24
-
-
26
-
-
292
-
-
90
-
-
1.0
-
-
1.1
-
-
2.1
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
2)
T j = 175 °C ,
V C C = 40 0 V,I C =30A,
V G E = 0 /1 5 V,
R G = 1 0 .6 Ω
L σ 1 ) =1 36nH,
C σ 1 ) =39pF
Energy losses include
“tail” and diode
reverse recovery.2)
ns
mJ
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.6 Nov. 09
IGP30N60T
IGW30N60T
TrenchStop® Series
100A
tp=2µs
90A
10µs
70A
60A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
T C =80°C
50A
T C =110°C
40A
30A
Ic
20A
1kH z
10kH z
1ms
10ms
DC
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
50A
IC, COLLECTOR CURRENT
160W
120W
80W
Ptot,
POWER DISSIPATION
1A
0.1A
1V
100kH z
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 10Ω)
40W
0W
25°C
50µs
Ic
10A
0A
100H z
10A
40A
30A
20A
10A
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Rev. 2.6 Nov. 09
IGP30N60T
IGW30N60T
TrenchStop® Series
80A
50A
60A
V G E =20V
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
70A
15V
50A
13V
11V
40A
9V
30A
7V
20A
40A
15V
13V
30A
11V
20A
7V
9V
10A
10A
0A
0A
0V
1V
2V
3V
0V
IC, COLLECTOR CURRENT
50A
40A
30A
20A
T J = 1 7 5 °C
10A
2 5 °C
0A
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
1V
2.5V
IC =60A
2.0V
IC =30A
1.5V
IC =15A
1.0V
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.6 Nov. 09
IGP30N60T
IGW30N60T
TrenchStop® Series
t d(off)
tf
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
t d(on)
10ns
tf
100ns
t d(on)
tr
tr
1ns
0A
10A
20A
10ns
30A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 10Ω,
Dynamic test circuit in Figure E)
10Ω
20Ω
30Ω
40Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
t d(off)
100ns
tf
t d(on)
tr
10ns
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, RG=10Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.43mA)
6
Rev. 2.6 Nov. 09
TrenchStop® Series
*) Eon and Ets include losses
due to diode recovery
*) E on an d E ts in c lud e lo s se s
Ets*
du e to d io d e re co v ery
4.0mJ
3.0mJ
2.0mJ
Eoff
1.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
5.0mJ
Eon*
0A
10A
20A
40A
50A
E off
2.0 m J
1.0 m J
0Ω
Eoff
Eon*
75°C
40Ω
2.5m J
2.0m J
E ts *
1.5m J
E off
1.0m J
E on *
0.5m J
0.0m J
300V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, RG = 10Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
30Ω
due to diode recovery
3.0m J
E, SWITCHING ENERGY LOSSES
1.5mJ
50°C
20Ω
*) E on and E ts include losses
Ets*
0.0mJ
25°C
10Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
2.0mJ
E, SWITCHING ENERGY LOSSES
3.0 m J
0.0 m J
30A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 10Ω,
Dynamic test circuit in Figure E)
0.5mJ
E ts *
E on *
0.0mJ
1.0mJ
IGP30N60T
IGW30N60T
350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, RG = 10Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.6 Nov. 09
TrenchStop® Series
IGP30N60T
IGW30N60T
C iss
VGE, GATE-EMITTER VOLTAGE
1nF
c, CAPACITANCE
15V
120V
480V
10V
C oss
100pF
5V
C rss
0V
0nC
30nC
60nC
0V
90nC 120nC 150nC 180n C
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
10V
20V
30V
40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
400A
300A
200A
100A
0A
12V
tSC,
IC(sc), short circuit COLLECTOR CURRENT
12µs
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Power Semiconductors
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.6 Nov. 09
ZthJC, TRANSIENT THERMAL RESISTANCE
TrenchStop® Series
IGP30N60T
IGW30N60T
D=0.5
0.2
-1
10 K/W
0.1
R,(K/W)
0.29566
0.25779
0.19382
0.05279
0.05
0.02
-2
10 K/W
0.01
R1
τ, (s)
-2
6.478*10
-3
6.12*10
-4
4.679*10
-5
6.45*10
R2
C1=τ1/R1
C2=τ2/R2
single pulse
1µs
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
Power Semiconductors
9
Rev. 2.6 Nov. 09
TrenchStop® Series
IGP30N60T
IGW30N60T
PG-TO-220-3-1
Power Semiconductors
10
Rev. 2.6 Nov. 09
TrenchStop® Series
Power Semiconductors
11
IGP30N60T
IGW30N60T
Rev. 2.6 Nov. 09
IGP30N60T
IGW30N60T
TrenchStop® Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2.6 Nov. 09
TrenchStop® Series
IGP30N60T
IGW30N60T
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Power Semiconductors
13
Rev. 2.6 Nov. 09
Similar pages