Infineon IKP15N65F5 650v duopack igbt and diode high speed switching series fifth generation Datasheet

IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP15N65F5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith
RAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
C
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowQg
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
C
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
G
C E
KeyPerformanceandPackageParameters
Type
IKP15N65F5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
15A
1.6V
175°C
K15F655
PG-TO220-3
2
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
Maximumratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
30.0
18.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
45.0
A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C
-
45.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
20.0
12.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
45.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
105.0
48.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
1.40
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
2.90
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
K/W
4
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
650
-
-
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.60
1.80
1.90
2.10
-
-
1.45
1.40
1.40
1.80
-
3.2
4.0
4.8
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
Collector-emitter saturation voltage VCEsat
V
V
Diode forward voltage
VF
VGE=0V,IF=9.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Gate-emitter threshold voltage
VGE(th)
IC=0.15mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=15.0A
-
22.0
-
S
V
V
40.0 µA
4000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
930
-
-
24
-
-
4
-
-
38.0
-
nC
-
7.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=15.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
17
-
ns
-
7
-
ns
-
150
-
ns
-
16
-
ns
-
0.13
-
mJ
-
0.04
-
mJ
-
0.17
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=7.5A,
VGE=0.0/15.0V,
rG=39.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
rG=39.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
17
-
ns
-
4
-
ns
-
190
-
ns
-
10
-
ns
-
0.04
-
mJ
-
0.02
-
mJ
-
0.06
-
mJ
-
50
-
ns
-
0.19
-
µC
-
8.0
-
A
-
-190
-
A/µs
-
22
-
ns
-
0.10
-
µC
-
8.6
-
A
-
-620
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=7.5A,
diF/dt=1000A/µs
Tvj=25°C,
VR=400V,
IF=2.0A,
diF/dt=1000A/µs
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
16
-
ns
-
10
-
ns
-
190
-
ns
-
5
-
ns
-
0.18
-
mJ
-
0.06
-
mJ
-
0.24
-
mJ
-
15
-
ns
-
4
-
ns
-
230
-
ns
-
30
-
ns
-
0.06
-
mJ
-
0.02
-
mJ
-
0.08
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=7.5A,
VGE=0.0/15.0V,
rG=39.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
rG=39.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=150°C,
VR=400V,
IF=7.5A,
diF/dt=1000A/µs
Tvj=150°C,
VR=400V,
IF=2.0A,
diF/dt=1000A/µs
dirr/dt
7
-
67
-
ns
-
0.39
-
µC
-
9.6
-
A
-
-140
-
A/µs
-
35
-
ns
-
0.20
-
µC
-
10.2
-
A
-
-360
-
A/µs
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
110
100
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
90
10
tp=1µs
10µs
50µs
1
100µs
200µs
80
70
60
50
40
30
500µs
20
DC
10
0.1
1
10
100
0
1000
25
50
VCE,COLLECTOR-EMITTERVOLTAGE[V]
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
30.0
45
27.5
40
35
22.5
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
25.0
20.0
17.5
15.0
12.5
10.0
7.5
VGE=20V
18V
30
12V
10V
25
8V
20
7V
6V
15
5V
10
4V
5.0
5
2.5
0.0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
8
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
45
45
40
40
35
VGE=20V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
35
18V
30
12V
10V
25
8V
20
7V
6V
15
5V
10
30
25
20
15
10
4V
5
0
Tj=25°C
Tj=150°C
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
4.5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.00
1000
IC=3,8A
IC=7,5A
IC=15A
td(off)
tf
td(on)
tr
1.75
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
5.0
1.50
1.25
100
10
1.00
0.75
0
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
5
10
15
20
25
30
35
40
45
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=39Ω,Dynamictestcircuitin
Figure E)
9
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
1000
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
1
5
15
25
35
45
55
65
75
100
10
1
85
25
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=7,5A,Dynamictestcircuitin
Figure E)
100
125
150
175
1.6
typ.
min.
max.
5.0
Eoff
Eon
Ets
1.4
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=7,5A,rG=39Ω,Dynamictestcircuitin
Figure E)
5.5
4.5
4.0
3.5
3.0
2.5
2.0
1.2
1.0
0.8
0.6
0.4
0.2
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
0.0
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
5
10
15
20
25
30
35
40
45
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.15mA)
10
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=39Ω,Dynamictestcircuitin
Figure E)
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
0.35
0.300
Eoff
Eon
Ets
0.250
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
0.30
Eoff
Eon
Ets
0.275
0.225
0.25
0.200
0.175
0.20
0.150
0.15
0.125
0.100
0.10
0.075
0.050
0.05
0.025
0.00
5
15
25
35
45
55
65
75
0.000
85
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=7,5A,Dynamictestcircuitin
Figure E)
75
100
125
150
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=7,5A,rG=39Ω,Dynamictestcircuitin
Figure E)
0.300
0.275
50
Tvj,JUNCTIONTEMPERATURE[°C]
16
Eoff
Eon
Ets
130V
520V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
12
10
8
6
4
0.050
2
0.025
0.000
200
250
300
350
400
450
0
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=7,5A,rG=39Ω,Dynamictestcircuitin
Figure E)
0
5
10
15
20
25
30
35
40
QGE,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=15A)
11
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
Ciss
Coss
Crss
C,CAPACITANCE[pF]
1000
100
10
1
0
5
10
15
20
25
1
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
i:
1
2
3
4
ri[K/W]: 0.3389743 0.8017237 0.7055106 0.3537915
τi[s]:
2.2E-5
3.2E-4
3.0E-3
0.02235159
0.01
1E-7
30
D=0.5
1E-6
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
Tj=25°C, IF = 7.5A
Tj=150°C, IF = 7.5A
80
1
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
90
D=0.5
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
0.01
0.001
1E-7
70
60
50
40
i:
1
2
3
4
ri[K/W]: 0.4457406 0.911159 0.9864113 0.5566891
τi[s]:
1.9E-5
2.4E-4
2.3E-3
0.02112308
1E-6
1E-5
1E-4
0.001
0.01
0.1
30
600
1
tp,PULSEWIDTH[s]
800
1000
1200
1400
1600
1800
2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
0.50
Tj=25°C, IF = 7.5A
Tj=150°C, IF = 7.5A
Irr,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
0.45
17.5
Tj=25°C, IF = 7.5A
Tj=150°C, IF = 7.5A
0.40
0.35
0.30
0.25
0.20
0.15
0.10
15.0
12.5
10.0
7.5
0.05
0.00
600
800
1000
1200
1400
1600
1800
5.0
600
2000
800
1000
1200
1400
1600
1800
diF/dt,DIODECURRENTSLOPE[A/µs]
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
0
27
Tj=25°C, IF = 7.5A
Tj=150°C, IF = 7.5A
21
-100
IF,FORWARDCURRENT[A]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
Tj=25°C
Tj=150°C
24
-50
-150
-200
-250
-300
18
15
12
9
6
-350
-400
600
2000
3
800
1000
1200
1400
1600
1800
2000
diF/dt,DIODECURRENTSLOPE[A/µs]
0
0.0
0.5
1.0
1.5
2.0
2.5
VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 24. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
13
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
2.0
IF=4,5A
IF=9A
IF=18A
VF,FORWARDVOLTAGE[V]
1.8
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
14
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
PG-TO220-3
15
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
a
a
b
b
t
16
Rev.1.1,2012-11-09
IKP15N65F5
Highspeedswitchingseriesfifthgeneration
RevisionHistory
IKP15N65F5
Revision:2012-11-09,Rev.1.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2012-11-09
Preliminary data sheet
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?
Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.
Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]
Publishedby
InfineonTechnologiesAG
81726Munich,Germany
81726München,Germany
©2013InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
17
Rev.1.1,2012-11-09
Similar pages