Siemens IL215AT Phototransistor small outline surface mount optocoupler Datasheet

IL215AT/216AT/217AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
Package Dimensions in Inches (mm)
• High Current Transfer Ratio, IF=1 mA
•
•
•
•
•
•
•
IL215AT, 20% Minimum
IL216AT, 50% Minimum
IL217AT, 100% Minimum
Isolation Voltage, 2500 VACRMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled
pair with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating throughholes requirements, this package conforms to
standards for surface mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25°C .................................. 90 mW
Derate Linearly from 25°C ............................ 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 7 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25°C ............................ 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ........................................... 280 mW
Derate Linearly from 25°C ............................ 3.3 mW/°C
Storage Temperature .......................... –55°C to +150°C
Operating Temperature ...................... –55°C to +100°C
Soldering Time at 260°C .................................... 10 sec.
Semiconductor Group
.120±.005
(3.05±.13)
.240
(6.10)
Anode 1
.154±.005 Cathode 2
CL
(3.91±.13)
NC 3
NC 4
.016 (.41)
Pin One ID
.192±.005
(4.88±.13)
40°
.015±.002
(.38±.05)
.004 (.10)
.008 (.20)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
8
7
6
5
7°
.058±.005
(1.49±.13)
5° max.
R.010
(.25) max.
.020±.004
(.15±.10)
2 plcs.
NC
Base
Collector
Emitter
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
Dark Current
Collector-Emitter
Capacitance
Package
DC Current Transfer
IL215AT
IL216AT
IL217AT
Collector-Emitter
Saturation Voltage
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
Symbol Min. Typ.
Max. Unit
Condition
VF
IR
CO
1.5
100
V
µA
pF
IF=1 mA
VR=6.0 V
V R=0
V
V
nA
IC=10 µA
IE=10 µA
VCE=10 V,
IF =0
pF
V CE=0
%
IF=1 mA
VCE=5 V
BVCEO
BVECO
1.0
0.1
25
30
7
I CEOdark
5
CCE
10
50
CTRDC
20
50
100
50
80
130
VCE sat
V IO
IC=0.1 mA,
IF=1 mA
0.4
2500
VACRMS
C IO
0.5
pF
R IO
tON, tOFF
100
3.0
GΩ
µs
IC=2 mA,
RE=100 Ω,
VCE=10 V
Specifications subject to change.
4–7
10.95
Figure 2. Normalized non-saturated and
saturated CTRce versus LED current
Figure 1. Forward voltage versus forward current
1.3
NCTRce - Normalized CTRce
VF - Forward Voltage - V
1.4
Ta = -55°C
1.2
Ta = 25°C
1.1
1.0
0.9
Ta = 85°C
0.8
0.7
.1
1
10
IF - Forward Current - mA
1.5
1.0
Vce = 0.4 V
0.0
.1
100
50
Vce = 0.4 V
NIcb - Normalized Icb
Ice - Collector-emitter
Current - mA
Vce = 10 V
Normalized to:
Vcb = 9.3 V
IF
= 1 mA
10
Ta = 25 °C
1
.1
0
.1
100
Figure 5. Collector-base photocurrent versus
LED current
Iceo - Collector-Emitter - nA
Icb - Collector-base Current - µA
1
10
IF - LED Current - mA
1000
Ta = 25°C
Vcb = 9.3 V
10
1
.1
.1
1
10
100
10
TYPICAL
10 -1
10 -2
-20
25°C
1.5
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25 °C
1.0
Vce = 0.4 V
0.5
0.0
1
10
100
Ib - Base Current - µA
Semiconductor Group
NCTRce - Normalized CTRce
NHFE(sat) - Normalized
Saturated HFE
50°C
100
Vce = 10V
1
10 0
Figure 7. Normalized saturated HFE versus
base current and temperature
70°C
1
10
IF - LED Current - mA
Figure 6. Collector-emitter leakage current
versus temperature
5
10
4
10
3
10
10 2
IF - LED Current - mA
2.0
100
100
100
100
1
10
IF - LED Current - mA
Figure 4. Normalized collector-base
photocurrent versus LED current
Ta = 25°C
.1
Vce = 5 V
0.5
Figure 3. Collector-emitter current
versus LED current
150
Normalized to:
Vce = 10 V
IF = 10 mA
Ta = 25°C
1000
Figure 8. Normalized non-saturated and
saturated CTRce versus LED current
2.0
Normalized to:
Vce = 5 V
Ta = 25 °C
Vce = 5 V
1.5
IF = 1 mA
1.0
0.5
Vce = .4 V
0.0
.1
4–8
0
20
40
60
80
100
Ta - Ambient Temperature - °C
1
10
IF - LED Current - mA
100
Figure 10. Normalized collector-base photocurrent versus LED current
Figure 9. Normalized non-saturated and saturated
collector-emitter current versus LED current
Vce = 5 V
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 1 mA
10
100
Vce = .4 V
1
.1
NIcb - Normalized Icb
NIce - Normalized Ice
100
10
1
.1
.01
.1
1
10
IF - LED Current - mA
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 1 mA
.01
.01
100
.1
1000
Figure 12. High to low propagation delay versus
LED current and load resistor
1000
20
Ta = 25°C
Vcb = 9.3 V
Icb - Collector-base
photocurrent -µa
100
10
1
.1
.1
1
10
100
1000
tpHL - High-Low Propagation
Delay - µs
Figure 11. Collector-base photocurrent versus
LED current
.01
10KΩ
15
4.7KΩ
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
2KΩ
10
5
0
0
5
10
15
IF - LED Current - mA
IF - LED Current - mA
20
Figure 14. Normalized non-saturated HFE
versus base current and temperature
80
1.2
10KΩ
60
40
4.7KΩ
20
2KΩ
Ta = 25°C, Vcc = 5 V, Vth = 1.5 V
0
0
5
10
15
IF - LED Current - mA
70°C
50°C
1.0
25°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25°C
-20°C
0.8
0.6
0.4
1
20
Figure 15. Typical switching characteristics
versus base resistance (saturated operation)
10
100
Ib - Base Current - µA
1000
Figure 16. Typical switching times
versus load resistance
1000
100
Switching time (µs)
NHFE - Normalized HFE
Figure 13. Low to high propagation delay
versus LED current and load resistor
Input:
IF =10mA
50 Pulse
width=100 mS
Duty cycle=50%
F
T OF
10
5
TON
Switching time (µS)
tpLH - Low-High Propagation
Delay - µs
1
10
100
IF - LED Current - mA
Input:
500 IF=10 mA
Pulse width=100 mS
Duty cycle=50%
100
50
10
10K
50K 100K
500K 1M
0.1
0.5 1
5
10
50 100
Load resistance RL (KΩ)
Base-emitter resistance, RBE (Ω)
Semiconductor Group
TON
5
1
1.0
FF
TO
4–9
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