Product Folder Sample & Buy Support & Community Tools & Software Technical Documents INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 INA21x-Q1 Automotive-Grade Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors 1 Features 3 Description • • • The INA21x-Q1 devices are voltage-output, currentshunt monitors (also called current-sense amplifiers) that can sense drops across shunts at common-mode voltages from –0.3 V to 26 V, independent of the supply voltage. The INA212-Q1 offers a fixed gain of 1000 V/V, INA213A-Q1 offers a fixed gain of 50 V/V, and the INA214-Q1 offers a fixed gain of 100 V/V. The low offset of the zero-drift architecture enables current sensing with maximum drops across the shunt as low as 10-mV full-scale. 1 • • • • Qualified for Automotive Applications Wide Common-Mode Range: –0.3 V to 26 V Offset Voltage: ±100 µV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) Accuracy: – ±1% Gain Error (Maximum over Temperature) – 0.5-µV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) Choice of Gain – INA212-Q1: 1000 V/V – INA213A-Q1: 50 V/V – INA214-Q1: 100 V/V Quiescent Current: 100 µA (Maximum) SC70 Package The devices operate from a single 2.7-V to 26-V power supply, drawing a maximum of 100 µA of supply current. They are specified over the operating temperature range of –40°C to 125°C and are offered in an SC70 package. Device Information(1) PART NUMBER 2 Applications INA212-Q1 • • • • • INA213A-Q1 Body Control Module Valve Control Motor Control Electronic Stability Control Wireless Charging Transmitters PACKAGE GAIN (V/V) 1000 SOT (6) 50 INA214-Q1 100 (1) For all available packages, see the orderable addendum at the end of the datasheet. Simplified Schematic REF GND 2.7 V to 26 V CBYPASS 0.01 mF to 0.1 mF RSHUNT Supply Reference Voltage INA21x-Q1 Output OUT R1 R3 R2 R4 IN- IN+ V+ SC70 Load PRODUCT GAIN R3 and R4 R1 and R2 INA212-Q1 INA213A-Q1 INA214-Q1 1000 50 100 1 kW 20 kW 10 kW 1 MW 1 MW 1 MW VOUT = (ILOAD ´ RSHUNT) Gain + VREF 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Absolute Maximum Ratings ..................................... Handling Ratings....................................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 10 7.1 Overview ................................................................. 10 7.2 Functional Block Diagram ....................................... 10 7.3 Feature Description................................................. 11 7.4 Device Functional Modes........................................ 12 8 Application and Implementation ........................ 17 8.1 Application Information............................................ 17 8.2 Typical Applications ............................................... 17 9 Power Supply Recommendations...................... 20 10 Layout................................................................... 20 10.1 Layout Guidelines ................................................. 20 10.2 Layout Example .................................................... 20 11 Device and Documentation Support ................. 21 11.1 11.2 11.3 11.4 11.5 Documentation Support ........................................ Related Links ........................................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 21 21 21 21 21 12 Mechanical, Packaging, and Orderable Information ........................................................... 21 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (October 2013) to Revision E Page • Added Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................................................... 4 • Deleted θJA Thermal Resistance parameter from Electrical Characteristics .......................................................................... 5 Changes from Revision C (August 2013) to Revision D Page • Changed INA213-Q1 device to INA213A-Q1 device throughout document........................................................................... 1 • Deleted TA, Operating Temperature from ABSOLUTE MAXIMUM RATINGS table. ............................................................. 4 Changes from Revision B (June 2010) to Revision C Page • Changed device names to -Q1 throughout. ........................................................................................................................... 1 • Added INA212-Q1: 1000 V/V to Features. ............................................................................................................................. 1 • Changed this list to be all automotive specific ....................................................................................................................... 1 • Added INA212-Q1 offers a fixed gain of 1000 V/V to Description. ........................................................................................ 1 • Added INA212-Q1 to image. .................................................................................................................................................. 1 • Removed Ordering Information table. .................................................................................................................................... 4 • Changed HBM to 2000 V, removed MM. ............................................................................................................................... 4 • Changed TA to -40 to 125°C................................................................................................................................................... 4 • Added INA212-Q1 values to CMRR VOS and Gain in Electrical Characteristics table. .......................................................... 5 • Changed Bandwidth parameter in the ELECTRICAL CHARACTERISTICS to differentiate between devices...................... 5 • Changed GAIN vs FREQUENCY graph to show difference between devices ...................................................................... 6 • Added INA212-Q1 device name in App Information. ........................................................................................................... 11 • Added INA212-Q1 to image. ................................................................................................................................................ 13 2 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 5 Pin Configuration and Functions DCK Package SC70-6 (Top View) REF 1 6 OUT GND 2 5 IN- V+ 3 4 IN+ Pin Functions PIN NAME NO. I/O (1) DESCRIPTION GND 2 — IN– 5 I Connect to load side of shunt resistor. IN+ 4 I Connect to supply side of shunt resistor OUT 6 O Output voltage REF 1 I Reference voltage, 0 V to V+ V+ 3 — Power supply, 2.7 V to 26 V (1) Ground Analog Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 3 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) Over operating free-air temperature range, unless otherwise noted. MIN Supply voltage, VS UNIT 26 V –26 26 V GND – 0.3 26 V REF input GND – 0.3 (VS) + 0.3 V (3) GND – 0.3 (VS) + 0.3 V 5 mA 150 °C 150 °C Analog inputs, VIN+ , VIN– Output Differential (VIN+)–(VIN–) MAX (2) Common-Mode (3) Input current into any terminal (3) Operating temperature –55 Junction temperature (1) (2) (3) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. VIN+ and VIN– are the voltages at the IN+ and IN– terminals, respectively. Input voltage at any terminal may exceed the voltage shown if the current at that pin is limited to 5 mA. 6.2 Handling Ratings Tstg MIN MAX UNIT –65 150 °C –2000 2000 Corner pins (REF, GND, V+, and IN+) –1000 1000 Other pins –1000 1000 Storage temperature range Human body model (HBM), per AEC Q100-002 (1) V(ESD) (1) Electrostatic discharge Charged device model (CDM), per AEC Q100-011 V AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCM Common-mode input voltage 12 V VS Supply voltage 2.7 26 V TJ Junction temperature –40 125 °C 6.4 Thermal Information INA21x-Q1 THERMAL METRIC (1) DCK (SC70) UNIT 6 PINS RθJA Junction-to-ambient thermal resistance 227.3 RθJC(top) Junction-to-case (top) thermal resistance 79.5 RθJB Junction-to-board thermal resistance 72.1 ψJT Junction-to-top characterization parameter 3.6 ψJB Junction-to-board characterization parameter 70.4 RθJC(bot) Junction-to-case (bottom) thermal resistance n/a (1) 4 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 6.5 Electrical Characteristics VSENSE = VIN+ – VIN–, VS = +5 V, VIN+ = 12 V, VREF = VS/2 (unless otherwise noted) PARAMETER TEST CONDITIONS TA (1) MIN TYP MAX UNIT INPUT VCM Common-mode input range CMRR Common-mode rejection ratio Full range INA212-Q1 VIN+ = 0 V to 26 V, VSENSE = 0 mV INA213A-Q1 Full range INA214-Q1 VOS Offset voltage RTI (2), VSENSE = 0 mV –0.3 26 100 140 100 120 100 140 INA212-Q1 INA213A-Q1 25°C INA214-Q1 dVOS/dT Offset voltage vs temperature (3) PSR Offset voltage vs power supply VS = 2.7 V to 18 V, VIN+ = 18 V, VSENSE = 0 mV 25°C IB Input bias current VSENSE = 0 mV 25°C IOS Input offset current VSENSE = 0 mV 25°C Full range 15 V dB ±0.55 ±35 ±5 ±100 ±1 ±60 0.1 0.5 µV/°C ±0.1 ±10 µV/V 28 35 µA µV ±0.02 µA OUTPUT INA212-Q1 Gain 1000 INA213A-Q1 50 INA214-Q1 Gain error VSENSE = –5 mV to 5 mV Gain error vs temperature (3) Nonlinearity error VSENSE = –5 mV to 5 mV Maximum capacitive No sustained oscillation load V/V 100 Full range ±0.02% ±1% Full range 3 10 25°C ±0.01% 25°C 1 ppm/°C nF VOLTAGE OUTPUT Output voltage swing to V+ powersupply rail (4) RL = 10 kΩ to GND Output voltage swing to GND Full range (V+) – 0.05 (V+) – 0.2 V Full range (VGND) + 0.005 (VGND) + 0.05 V FREQUENCY RESPONSE CLOAD = 10 pF, INA212 BW Bandwidth CLOAD = 10 pF, INA213A 4 25°C 80 CLOAD = 10 pF, INA214 SR Slew rate kHz 30 25°C 0.4 V/µs 25°C 25 nV/√Hz 25°C 65 NOISE, RTI Voltage noise density RTI (2) POWER SUPPLY IQ (1) (2) (3) (4) Quiescent current VSENSE = 0 mV Full range 100 115 µA Full range TA = –40°C to 125°C RTI = referred to input Not production tested See Typical Characteristic, Output Voltage Swing vs Output Current (Figure 10). Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 5 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com 6.6 Typical Characteristics TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted) 100 80 Population Offset Voltage (mV) 60 40 20 0 -20 -40 -60 35 30 20 25 10 15 5 0 -5 -10 -15 -20 -25 -30 -35 -80 -100 -50 -25 0 Offset Voltage (mV) 25 50 75 100 125 150 Temperature (°C) Figure 2. Offset Voltage vs Temperature Figure 1. Input Offset Voltage Production Distribution 5 4 Population CMRR (mV/V) 3 2 1 0 -1 -2 -3 -4 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5 -50 -25 0 Common-Mode Rejection Ratio (mV/V) 25 50 75 100 125 150 Temperature (°C) Figure 3. Common-Mode Rejection Production Distribution Figure 4. Common-Mode Rejection Ratio vs Temperature 1.0 20 Typical Units Shown 0.8 Population Gain Error (%) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.8 -1.0 -50 -25 0 Gain Error (%) Figure 5. Gain Error Production Distribution 6 Submit Documentation Feedback 25 50 75 100 125 150 Temperature (°C) Figure 6. Gain Error vs Temperature Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 Typical Characteristics (continued) TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted) 160 70 INA212 140 50 120 |PSRR| (dB) 60 Gain (dB) 40 30 INA213 INA214 20 100 80 60 20 VCM = 0V VDIF = 15mVPP Sine 0 0 -10 10 100 1k 10k 100k 1M 1 10M Output Voltage Swing (V) 80 60 VS = +5V CM V = 1V Sine VDIF = Shorted VREF = 2.5V 1 10 100 1k 10k 100k V+ (V+) - 0.5 (V+) - 1 (V+) - 1.5 (V+) - 2 (V+) - 2.5 (V+) - 3 100k VS = 5V to 26V VS = 2.7V to 26V VS = 2.7V GND + 3 GND + 2.5 GND + 2 GND + 1.5 GND + 1 GND + 0.5 GND 0 1M TA = -40C TA = +25C TA = +125C VS = 2.7V to 26V 5 10 Frequency (Hz) 15 20 25 30 35 40 Output Current (mA) Figure 9. Common-Mode Rejection Ratio vs Frequency Figure 10. Output Voltage Swing vs Output Current 50 30 25 40 IB+, IB-, VREF = 0V Input Bias Current (mA) Input Bias Current (mA) 10k Figure 8. Power-Supply Rejection Ratio vs Frequency 100 0 1k Figure 7. Gain vs Frequency 120 20 100 Frequency (Hz) 140 40 10 Frequency (Hz) 160 |CMRR| (dB) VS = +5V + 250mV Sine Disturbance VCM = 0V VDIF = Shorted VREF = 2.5V 40 10 30 20 IB+, IB-, VREF = 2.5V 10 0 20 IB+, VREF = 2.5V 15 10 5 IB+, IB-, VREF = 0V and IB-, VREF = 2.5V 0 -10 -5 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Common-Mode Voltage (V) Common-Mode Voltage (V) Figure 11. Input Bias Current vs Common-Mode Voltage With Supply Voltage = 5 V Figure 12. Input Bias Current vs Common-Mode Voltage With Supply Voltage = 0 V (Shutdown) Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 7 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com Typical Characteristics (continued) TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted) 35 100 90 Quiescent Current (mA) Input Bias Current (mA) 30 25 20 15 10 5 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 0 -50 150 -25 0 25 50 75 100 125 150 Temperature (°C) Temperature (°C) Figure 13. Input Bias Current vs Temperature Figure 14. Quiescent Current vs Temperature Referred-to-Input Voltage Noise (200nV/div) 10 VS = ±2.5V VREF = 0V VIN-, VIN+ = 0V 1 10 100 1k 10k 100k Figure 15. Input-Referred Voltage Noise vs Frequency Figure 16. 0.1-Hz To 10-Hz Voltage Noise (Referred-To-Input) Input Voltage (5mV/diV) 2VPP Output Signal 10mVPP Input Signal Figure 17. Step Response (10-mVPP Input Step) Submit Documentation Feedback Common Voltage Step 0V Output Voltage 0V Output Voltage (40mV/div) Output Voltage (0.5V/diV) Time (1s/div) Time (100ms/div) 8 VS = ±2.5V VCM = 0V VDIF = 0V VREF = 0V Frequency (Hz) Common-Mode Voltage (1V/div) Input-Reffered Voltage Noise (nV/Öz) 100 Time (50ms/div) Figure 18. Common-Mode Voltage Transient Response Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 Typical Characteristics (continued) TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted) Noninverting Input Overload 2V/div 2V/div Inverting Input Overload Output Output 0V 0V VS = 5V, VCM = 12V, VREF = 2.5V VS = 5V, VCM = 12V, VREF = 2.5V Time (250ms/div) Time (250ms/div) Figure 19. Inverting Differential Input Overload Figure 20. Noninverting Differential Input Overload Supply Voltage 1V/div 1V/div Supply Voltage Output Voltage Output Voltage 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (100ms/div) Time (100ms/div) Figure 21. Start-Up Response Figure 22. Brownout Recovery Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 9 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com 7 Detailed Description 7.1 Overview The INA212-Q1, INA213A-Q1, and INA214-Q1 are 26-V, common-mode, zero-drift topology, current-sensing amplifiers that can be used in both low-side and high-side configurations. These specially-designed, currentsensing amplifiers are able to accurately measure voltages developed across current-sensing resistors on common-mode voltages that far exceed the supply voltage powering the device. Current can be measured on input voltage rails as high as 26 V while the device can be powered from supply voltages as low as 2.7 V. The zero-drift topology enables high-precision measurements with maximum input offset voltages as low as 35 µV with a maximum temperature contribution of 0.5 µV/°C over the full temperature range of –40°C to 125°C. 7.2 Functional Block Diagram V+ IN- OUT IN+ + REF GND 10 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 7.3 Feature Description 7.3.1 Basic Connections Figure 23 shows the basic connections of the INA212-Q1, INA213A-Q1, or INA214-Q1. Connect the input pins (IN+ and IN–) as closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistor. RSHUNT Power Supply Load 5V Supply CBYPASS 0.1µF V+ IN- - OUT ADC + IN+ Microcontroller REF GND Figure 23. Typical Application Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors close to the device pins. 7.3.2 Selecting RS The zero-drift offset performance of the INA21x-Q1 offers several benefits. Most often, the primary advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current shunt monitors typically require a full-scale range of 100 mV. The INA21x-Q1 gives equivalent accuracy at a full-scale range on the order of 10 mV. This accuracy reduces shunt dissipation by an order of magnitude with many additional benefits. Alternatively, there are applications that must measure current over a wide dynamic range that can take advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower gain INA212-Q1, INA213A-Q1 or INA214-Q1 to accommodate larger shunt drops on the upper end of the scale. For instance, an INA213A-Q1 operating on a 3.3-V supply could easily handle a full-scale shunt drop of 60 mV, with only 100 µV of offset. Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 11 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com 7.4 Device Functional Modes 7.4.1 Input Filtering An obvious and straightforward location for filtering is at the output of the INA21x-Q1. However, this location negates the advantage of the low output impedance of the internal buffer. The only other filtering option is at the input pins of the INA21x-Q1. This location, though, requires consideration of the ±30% tolerance of the internal resistances. Figure 24 shows a filter placed at the input pins. V+ VCM RS < 10W RINT VOUT RSHUNT CF Bias RS < 10W VREF RINT Load Figure 24. Filter at Input Pins The addition of external series resistance, however, creates an additional error in the measurement so the value of these series resistors must be kept to 10 Ω (or less, if possible) to reduce impact to accuracy. The internal bias network shown in Figure 24 present at the input pins creates a mismatch in input bias currents when a differential voltage is applied between the input pins. If additional external series filter resistors are added to the circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This error results in a voltage at the device input pins that is different than the voltage developed across the shunt resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device operation. The amount of error these external filter resistors add to the measurement can be calculated using Equation 2 where the gain error factor is calculated using Equation 1. The amount of variance in the differential voltage present at the device input relative to the voltage developed at the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3 and R4 (or RINT as shown in Figure 24). The reduction of the shunt voltage reaching the device input pins appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be calculated to determine the amount of gain error that is introduced by the addition of external series resistance. The equation used to calculate the expected deviation from the shunt voltage to what is measured at the device input pins is given in Equation 1: (1250 ´ RINT) Gain Error Factor = (1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT) where: • • 12 RINT is the internal input resistor (R3 and R4), and RS is the external series resistance. Submit Documentation Feedback (1) Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 Device Functional Modes (continued) With the adjustment factor from Equation 1 including the device internal input resistance, this factor varies with each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2. Table 1. Input Resistance PRODUCT GAIN (V/V) R3 AND R4 (kΩ) INA212-Q1 1000 1 INA213A-Q1 50 20 INA214-Q1 100 10 Table 2. Device Gain Error Factor PRODUCT SIMPLIFIED GAIN ERROR FACTOR 5000 INA212-Q1 (9 ´ RS) + 5000 20,000 INA213A-Q1 (17 ´ RS) + 20,000 10,000 INA214-Q1 (9 ´ RS) + 10,000 The gain error that can be expected from the addition of the external series resistors can then be calculated based on Equation 2: Gain Error (%) = 100 - (100 ´ Gain Error Factor) (2) For example, using an INA212-Q1 and the corresponding gain error equation from Table 2, a series resistance of 10 Ω results in a gain error factor of 0.982. The corresponding gain error is then calculated using Equation 2, resulting in a gain error of approximately 1.77% solely because of the external 10-Ω series resistors. Using an INA213A-Q1 with the same 10-Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84% again solely because of these external resistors. 7.4.2 Shutting Down the INA21x-Q1 Series While the INA21x-Q1 series does not have a shutdown pin, its low power consumption allows the output of a logic gate or transistor switch to power the INA21x-Q1. This gate or switch turns on and turns off the INA21x-Q1 power-supply quiescent current. However, in current shunt monitoring applications, there is also a concern for how much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified schematic of the INA21x-Q1 in shutdown mode shown in Figure 25. Shutdown Control RSHUNT Supply Reference Voltage REF INA21x-Q1 GND 1 MW R3 1 MW R4 OUT Load Output IN- IN+ V+ CBYPASS PRODUCT R3 and R4 INA212-Q1 INA213A-Q1 INA214-Q1 1 kW 20 kW 10 kW NOTE: 1-MΩ paths from shunt inputs to reference and INA21x-Q1outputs. Figure 25. Basic Circuit for Shutting Down INA21x-Q1 With a Grounded Reference Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 13 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com Note that there is typically slightly more than 1-MΩ impedance (from the combination of 1-MΩ feedback and 5kΩ input resistors) from each input of the INA21x-Q1 to the OUT pin and to the REF pin. The amount of current flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded, the calculation of the effect of the 1-MΩ impedance from the shunt to ground is straightforward. However, if the reference or op amp is powered while the INA21x-Q1 is shut down, the calculation is direct; instead of assuming 1 MΩ to ground, however, assume 1 MΩ to the reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is required. For instance, if the reference source behaves as an open circuit when it is unpowered, little or no current flows through the 1-MΩ path. Regarding the 1-MΩ path to the output pin, the output stage of a disabled INA21x-Q1 does constitute a good path to ground; consequently, this current is directly proportional to a shunt common-mode voltage present across a 1-MΩ resistor. As a final note, when the device is powered up, there is an additional, nearly constant and well-matched 25 µA that flows in each of the inputs as long as the shunt common-mode voltage is 3 V or higher. Below 2-V commonmode, the only current effects are the result of the 1-MΩ resistors. 7.4.3 REF Input Impedance Effects As with any difference amplifier, the INA21x-Q1 common-mode rejection ratio is affected by any impedance present at the REF input. This concern is not a problem when the REF pin is connected directly to most references or power supplies. When using resistive dividers from the power supply or a reference voltage, the REF pin should be buffered by an op amp. In systems where the INA21x-Q1 output can be sensed differentially, such as by a differential input analog-todigital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can be cancelled. Figure 26 depicts a method of taking the output from the INA21x-Q1 by using the REF pin as a reference. RSHUNT Supply REF GND 2.7 V to 26 V INA21x-Q1 R1 R3 R2 R4 Load ADC OUT Output IN- IN+ V+ CBYPASS 0.01 µF to 0.1 µF Figure 26. Sensing INA21x-Q1 to Cancel Effects of Impedance on the REF Input 7.4.4 Using the INA21x-Q1 with Common-Mode Transients Above 26 V With a small amount of additional circuitry, the INA21x-Q1 can be used in circuits subject to transients higher than 26 V, such as automotive applications. Use only zener diode or zener-type transient absorbers (sometimes referred to as Transzorbs) — any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as a working impedance for the zener' see Figure 27. Keeping these resistors as small as possible is preferable, most often around 10 Ω. Larger values can be used with an effect on gain that is discussed in the Input Filtering section. Because this circuit limits only short-term transients, many applications are satisfied with a 10-Ω resistor along with conventional zener diodes of the lowest power rating that can be found. This combination uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or SOD-523. 14 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 RSHUNT Supply Load RPROTECT 10 Ω RPROTECT 10 Ω Reference Voltage REF INA21x-Q1 GND 1 MΩ R3 1 MΩ R4 V+ Shutdown Control Output OUT IN- IN+ CBYPASS Figure 27. INA21x-Q1 Transient Protection Using Dual Zener Diodes In the event that low-power zeners do not have sufficient transient absorption capability and a higher power transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-toback diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total board area required by the INA21x-Q1 with all protective components is less than that of an SO-8 package, and only slightly greater than that of an MSOP-8 package. RSHUNT Supply Load RPROTECT 10 Ω RPROTECT 10 Ω Reference Voltage REF GND INA21x-Q1 1MΩ R3 1 MΩ R4 V+ Shutdown Control Output OUT IN- IN+ CBYPASS Figure 28. INA21x-Q1 Transient Protection Using a Single Transzorb and Input Clamps Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 15 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com 7.4.5 Improving Transient Robustness Applications involving large input transients with excessive dV/dt above 2 kV per microsecond present at the device input pins may cause damage to the internal ESD structures on version A devices. This potential damage is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With significant current available in most current-sensing applications, the large current flowing through the input transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be taken to ensure that external series input resistance does not significantly impact gain error accuracy. For accuracy purposes, keep these resistances under 10 Ω if possible. Ferrite beads are recommended for this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10 Ω of resistance at dc and over 600 Ω of resistance at 100 MHz to 200 MHz are recommended. The recommended capacitor values for this filter are between 0.01 µF and 0.1 µF to ensure adequate attenuation in the high-frequency region. This protection scheme is shown in Figure 29. Shunt Reference Voltage Load Supply Device OUT REF 1MW R3 GND IN- - + MMZ1608B601C IN+ V+ +2.7V to +26V 0.01mF to 0.1mF Output 1MW R4 0.01mF to 0.1mF Figure 29. Transient Protection 16 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The INA21x-Q1 devices measure the voltage developed across a current-sensing resistor when current passes through it. The ability to drive the reference pin to adjust the functionality of the output signal offers multiple configurations, as discussed throughout this section. 8.2 Typical Applications 8.2.1 Unidirectional Operation Unidirectional operation allows the INA21x-Q1 to measure currents through a resistive shunt in one direction. The most frequent case of unidirectional operation sets the output at ground by connecting the REF pin to ground. In unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias the REF pin to a convenient value above 50 mV to get the device output swing into the linear range for zero inputs. A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to negative currents (inverted voltage polarity at the device input). Load 5V Supply CBYPASS 0.1µF V+ IN- - OUT Output + IN+ REF GND Figure 30. Unidirectional Application Schematic 8.2.1.1 Design Requirements The device can be configured to monitor current flowing in one direction (unidirectional) or in both directions (bidirectional) depending on how the REF pin is configured. The most common case is unidirectional where the output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 30. When the input signal increases, the output voltage at the OUT pin increases. Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 17 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com Typical Applications (continued) 8.2.1.2 Detailed Design Procedure The linear range of the output stage is limited in how close the output voltage can approach ground under zero input conditions. In unidirectional applications where measuring very low input currents is desirable, bias the REF pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit commonmode rejection errors, TI recommends buffering the reference voltage connected to the REF pin. A less frequently-used output biasing method is to connect the REF pin to the supply voltage, V+. This method results in the output voltage saturating at 200 mV below the supply voltage when no differential input signal is present. This method is similar to the output saturated low condition with no input signal when the REF pin is connected to ground. The output voltage in this configuration only responds to negative currents that develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the differential input signal increases negatively, the output voltage moves downward from the saturated supply voltage. The voltage applied to the REF pin must not exceed the device supply voltage. 8.2.1.3 Application Curve Output Voltage (1 V/div) An example output response of a unidirectional configuration is shown in Figure 31. With the REF pin connected directly to ground, the output voltage is biased to this zero output level. The output rises above the reference voltage for positive differential input signals but cannot fall below the reference voltage for negative differential input signals because of the grounded reference voltage. 0V Output VREF Time (500 µs /div) C001 Figure 31. Unidirectional Application Output Response 18 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 Typical Applications (continued) 8.2.2 Bidirectional Operation Load 5V Supply CBYPASS 0.1µF V+ IN- Reference Voltage - OUT Output + IN+ REF + - GND Figure 32. Bidirectional Application Schematic 8.2.2.1 Design Requirements The device is a bidirectional, current-sense amplifier capable of measuring currents through a resistive shunt in two directions. This bidirectional monitoring is common in applications that include charging and discharging operations where the current flow-through resistor can change directions. 8.2.2.2 Detailed Design Procedure The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin, as shown in Figure 32. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN– pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to the REF pin can be set anywhere between 0 V to V+. For bidirectional applications, VREF is typically set at midscale for equal signal range in both current directions. In some cases, however, VREF is set at a voltage other than mid-scale when the bidirectional current and corresponding output signal do not need to be symmetrical. 8.2.2.3 Application Curve Output Voltage (1 V/div) An example output response of a bidirectional configuration is shown in Figure 33. With the REF pin connected to a reference voltage, 2.5 V in this case, the output voltage is biased upwards by this reference level. The output rises above the reference voltage for positive differential input signals and falls below the reference voltage for negative differential input signals. VOUT VREF 0V Time (500 µs/div) C002 Figure 33. Bidirectional Application Output Response Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 19 INA212-Q1, INA213A-Q1, INA214-Q1 SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 www.ti.com 9 Power Supply Recommendations The input circuitry of the INA21x-Q1 can accurately measure beyond its power-supply voltage, V+. For example, the V+ power supply can be 5 V, whereas the load power supply voltage can be as high as 26 V. However, the output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note also that the INA21x-Q1 can withstand the full input signal range up to 26 V at the input pins, regardless of whether the device has power applied or not. 10 Layout 10.1 Layout Guidelines • • Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique ensures that only the current-sensing resistor impedance is detected between the input pins. Poor routing of the current-sensing resistor commonly results in additional resistance present between the input pins. Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause significant measurement errors. Place the power-supply bypass capacitor as closely as possible to the supply and ground pins. The recommended value of this bypass capacitor is 0.1 μF. Additional decoupling capacitance can be added to compensate for noisy or high-impedance power supplies. 10.2 Layout Example Output Signal Trace IN- IN+ GND V+ REF OUT VIA to Power or Ground Plane VIA to Ground Plane Supply Voltage Supply Bypass Capacitor Figure 34. Recommended Layout 20 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 INA212-Q1, INA213A-Q1, INA214-Q1 www.ti.com SBOS475E – MARCH 2009 – REVISED DECEMBER 2014 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: • INA210-215EVM User's Guide, SBOU065 11.2 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 3. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY INA212-Q1 Click here Click here Click here Click here Click here INA213A-Q1 Click here Click here Click here Click here Click here INA214-Q1 Click here Click here Click here Click here Click here 11.3 Trademarks All trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA212-Q1 INA213A-Q1 INA214-Q1 21 PACKAGE OPTION ADDENDUM www.ti.com 6-Oct-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) INA212AQDCKRQ1 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SJW INA213AQDCKRQ1 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBX INA214AQDCKRQ1 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OFT (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 6-Oct-2014 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF INA212-Q1, INA214-Q1 : • Catalog: INA212, INA214 NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 6-Oct-2014 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 2.4 2.5 1.2 4.0 8.0 Q3 INA212AQDCKRQ1 SC70 DCK 6 3000 178.0 9.0 INA213AQDCKRQ1 SC70 DCK 6 3000 178.0 8.4 2.4 2.5 1.2 4.0 8.0 Q3 INA213AQDCKRQ1 SC70 DCK 6 3000 180.0 8.4 2.47 2.3 1.25 4.0 8.0 Q3 INA214AQDCKRQ1 SC70 DCK 6 3000 180.0 8.4 2.47 2.3 1.25 4.0 8.0 Q3 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 6-Oct-2014 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA212AQDCKRQ1 SC70 DCK 6 3000 180.0 180.0 18.0 INA213AQDCKRQ1 SC70 DCK 6 3000 340.0 340.0 38.0 INA213AQDCKRQ1 SC70 DCK 6 3000 202.0 201.0 28.0 INA214AQDCKRQ1 SC70 DCK 6 3000 202.0 201.0 28.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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