Isahaya INK0002AC1 High speed switching silicon n-channel mosfet Datasheet

INK0002AX SERIES
.
High speed switching
Silicon N-channel MOSFET
OUTLINE DRAWING
DESCRIPTION
INK0002AX is a Silicon N-channel MOSFET.
This product is most suitable for low voltage
use such as portable machinery , because of low
voltage drive and low on resistance.
INK0002AT2
INK0002AM1
2.1
0.3
②
0.425
③
0.15
①
1.25
0~0.1
0.7
0.5
0.9
③
0.65
1.2
0.8
2.0
1.3
②
0.2
0.25
0.4
①
0.4
FEATURE
0.425
0.65
0.8
0.2
・Input impedance is high, and not necessary to
consider a drive electric current.
・Vth is low, and drive by low voltage is possible.
Vth=0.6~1.2V
・Low on Resistance. Ron=1.1Ω(TYP)
・High speed switching.
・Small package for easy mounting.
Unit:mm
APPLICATION
high speed switching , Analog switching
JEITA, JEDEC:-
ISAHAYA:T-USM
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INK0002AU1
INK0002AC1
1.6
EQUIVALENT CIRCUIT
0.4
0.8
2.5
0.4
0.5
1.5
0.5
②
0.4
0.95
③
①
0.95
2.9
1.90
②
0.3
0.5
①
1.6
1.0
G
0.5
D
③
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
ISAHAYA ELECTRONICS CORPORATION
0.16
0~0.1
0.8
1.1
0.15
0~0.1
0.55
0.7
S
JEITA:SC-59
JEDEC:Similar to TO-236
T TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INK0002AX SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VDSS
VGSS
I D
Drain-source voltage
Gate-source voltage
Drain current
Total
power
dissipation
(Ta=25℃)
Channel temperature
Range of Storage temperature
PD
Tch
Tstg
RATING
INK0002AU1
INK0002AM1
30
±8
200
INK0002AT2
125(※)
150
+125
-55~+125
ELECTRICAL CHARACTERISTICS(Ta=25℃)
200
mW
℃
℃
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
PARAMETER
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
Drain-source breakdown voltage
I D=100μA, V
Gate-source leak current
V
GS
Zero gate voltage drain current
V
DS
Gate threshold voltage
I D=250μA, V
Forward transfer admittance
Static drain-source on-state
resistance
Input capacitance
V
V
DS
GS
=0V,f=1MHz
Output capacitance
V
DS=10V, V
GS=0V,f=1MHz
Switching time
V
V
Ciss
Coss
tON
tOFF
V
V
mA
+150
-55~+150
SYMBOL
RDS(ON)
UNIT
INK0002AC1
TEST CONDITION
=0V
GS
MIN
30
LIMIT
TYP
-
MAX
-
-
-
±0.5
μA
=±5V, VDS=0V
=30V ,VGS=0V
UNIT
V
-
-
1.0
μA
0.6
-
1.2
V
-
300
-
mS
-
1.1
-
Ω
-
33
-
pF
-
6.8
-
pF
DD
-
12
-
GS
-
80
-
DS= V
GS
=10V, I D=0.1A
DS
I D=100mA, V
=10V, V
=4.0V
GS
=5V , I D =10mA
=0~5V
ns
Switching time test condition
test circuit
OUT
5V
90%
IN
5V
RL
50Ω
0
10μs
VDD=5V
D.U.≦1%
Common source
Ta=25℃
input
waveform
10%
0V
VDD
VDD
10%
output
waveform
90%
VDS(ON)
tf
tr
ton
ISAHAYA ELECTRONICS CORPORATION
toff
TYPICAL CHARACTERISTICS
ID -VDS
Ta=25℃
100
1.6V
1
1.5V
1.0V
1.4V
0.8
Drain current ID (mA)
80
Drain current ID (mA)
ID -VDS(Low voltage region)
Ta=25℃
1.3V
60
40
1.2V
20
0.95V
0.6
0.4
0.9V
0.2
1.1V
0.85V
VGS=1.0V
VGS=0.8V
0
0
0
2
4
6
8
0
10
0.1
0.2
0.3
4
5
1000
100
Ta=25℃
VDS=10V
Ta=25℃
VGS=0V
Drain current ID (mA)
Drain reverse current IDR (mA)
0.5
ID -VGS
IDR -VDS
10
100
10
1
1
-0
-0.5
-1
-1.5
0
-2
1
2
3
Gate-Source voltage VGS (V)
Drain-Source voltage VDS (V)
|Yfs| - ID
VDS(ON) -ID
1000
1000
Ta=25℃
VDS=10V
Ta=25℃
VGS=4V
Drain-Source ON voltage
VDS(ON) (mV)
Forward transfer admittance
|Yfs| (mS)
0.4
Drain-Source voltage VDS (V)
Drain-Source voltage VDS (V)
100
10
100
10
1
1
1
10
100
1
1000
10
100
Drain current ID (mA)
Drain current ID (mA)
t - ID
C - VDS
10000
100
Ta=25℃
toff
Ciss
tf
Capacitance C (pF)
Switching time t (ns)
1000
100
ton
10
10
Coss
Ta=25℃
VGS=0V
tr
1
1
0.1
1
10
Drain current ID (mA)
100
0.1
1
10
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Oct.2008
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