Infineon IPA50R650CE 500v coolmos⪠ce power transistor Datasheet

IPA50R650CE
MOSFET
500VCoolMOSªCEPowerTransistor
PG-TO220FP
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2
Gate
Pin 1
Applications
Source
Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.65
Ω
ID
9
A
Qg,typ
15
nC
ID,pulse
19
A
Eoss @ 400V
1.69
µJ
Type/OrderingCode
Package
Marking
IPA50R650CE
PG-TO 220 FullPAK
5R650CE
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
9
5.7
A
TC = 25°C
TC = 100°C
-
19
A
TC=25°C
-
-
102
mJ
ID =2.3A; VDD = 50V
EAR
-
-
0.15
mJ
ID =2.3A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
2.3
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power disspiation (Full PAK)
Ptot
-
-
27.2
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
-
Mounting torque
-
-
-
50
Ncm M2.5 screws
IS
-
-
4.0
A
TC=25°C
IS,pulse
-
-
19.0
A
TC = 25°C
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
dif/dt
-
-
500
A/µs VDS=0...400V,ISD<=IS,Tj=25°C
-
-
2500
V
Vrms,TC=25°C,t=1min
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
Continuous diode forward current
2)
Diode pulse current
3)
Reverse diode dv/dt
3)
Maximum diode commutation speed
Insulation withstand voltage for TO-220
VISO
FullPAK
2Thermalcharacteristics
Table3ThermalcharacteristicsTO220FullPAK
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
4.6
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
1.6mm (0.063 in.) from case for 10s
1)
Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.50
V
VDS=VGS,ID=0.15mA
-
10
1
-
µA
VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.59
1.52
0.65
-
Ω
VGS=13V,ID=1.8A,Tj=25°C
VGS=13V,ID=1.8A,Tj=150°C
Gate resistance
RG
-
3
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
500
-
Gate threshold voltage
V(GS)th
2.50
Zero gate voltage drain current
IDSS
Gate-source leakage curent
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
342
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
26
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1)
Co(er)
-
21
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
80
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
6
-
ns
VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Rise time
tr
-
5
-
ns
VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Turn-off delay time
td(off)
-
27
-
ns
VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Fall time
tf
-
13
-
ns
VDD=400V,VGS=13V,ID=2.3A,
RG=5.3Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
1.8
-
nC
VDD=400V,ID=2.3A,VGS=0to10V
Gate to drain charge
Qgd
-
8.1
-
nC
VDD=400V,ID=2.3A,VGS=0to10V
Gate charge total
Qg
-
15
-
nC
VDD=400V,ID=2.3A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.3
-
V
VDD=400V,ID=2.3A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
4
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=2.3A,Tj=25°C
162
-
ns
VR=400V,IF=2.3A,diF/dt=100A/µs
-
1
-
µC
VR=400V,IF=2.3A,diF/dt=100A/µs
-
11.1
-
A
VR=400V,IF=2.3A,diF/dt=100A/µs
Min.
Typ.
Max.
VSD
-
0.84
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
4Electricalcharacteristicsdiagrams
Powerdissipation(FullPAK)
Max.transientthermalimpedance(FullPAK)
101
40
35
0.5
30
0.2
100
0.1
ZthJC[K/W]
Ptot[W]
25
20
0.05
0.02
15
10-1
0.01
single pulse
10
5
0
0
40
80
120
10-2
160
10-5
10-4
10-3
TC[°C]
10-2
10-1
100
tp[s]
Ptot=f(TC)
ZthJC=f(tP);parameter:D=tp/T
Safeoperatingarea(FullPAK)Tj=25°C
Safeoperatingarea(FullPAK)Tj=80°C
2
102
10
1 µs
101
101
1 µs
10 µs
ID[A]
ID[A]
10 µs
100 µs
100
100
100 µs
1 ms
1 ms
10 ms
10-1
10 ms
10-1
DC
DC
10-2
100
101
102
103
10-2
100
101
102
VDS[V]
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
6
103
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
Typ.outputcharacteristicsTj=25°C
Typ.outputcharacteristicsTj=125°C
25
14
20 V
10 V
12
20 V
20
10
10 V
8V
8V
15
7V
ID[A]
ID[A]
8
6
7V
10
6V
4
5.5 V
6V
5
5V
5.5 V
2
4.5 V
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance
Drain-sourceon-stateresistance
2.2
2.00
1.80
2.0
5V
5.5 V
6V
6.5 V
7V
1.60
1.40
1.8
98%
RDS(on)[Ω]
RDS(on)[Ω]
1.20
1.6
10 V
1.4
typ
1.00
0.80
0.60
0.40
1.2
0.20
1.0
0
4
8
12
0.00
-50
-30
-10
10
30
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
70
90
110
130
150
Tj[°C]
RDS(on)=f(Tj);ID=1.8A;VGS=13V
7
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
Typ.transfercharacteristics
Typ.gatecharge
20
10
25 °C
9
16
8
14
7
12
6
VGS[V]
ID[A]
18
10
150 °C
4
6
3
4
2
2
1
0
2
4
6
8
0
10
400 V
5
8
0
120 V
0
4
8
VGS[V]
12
16
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=2.3Apulsed;parameter:VDD
Avalancheenergy
Drain-sourcebreakdownvoltage
120
580
560
100
540
VBR(DSS)[V]
EAS[mJ]
80
60
520
500
40
480
20
0
460
0
25
50
75
100
125
150
175
440
-50
-25
0
Tj[°C]
50
75
100
125
150
Tj[°C]
EAS=f(Tj);ID=2.3A;VDD=50V
Final Data Sheet
25
VBR(DSS)=f(Tj);ID=1mA
8
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
Typ.capacitances
Typ.Cossstoredenergy
4
10
2.5
2.0
103
Ciss
Eoss[µJ]
C[pF]
1.5
102
1.0
Coss
101
0.5
Crss
100
0
100
200
300
400
500
0.0
0
VDS[V]
100
200
300
400
500
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Eoss=f(VDS)
Forwardcharacteristicsofreversediode
102
IF[A]
101
125 °C
25 °C
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
9
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
6PackageOutlines
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
DIM
A
A1
A2
b
b1
b2
b3
b4
c
D
D1
E
e
e1
N
H
L
L1
Q
MILLIMETERS
MIN
MAX
4.50
4.90
2.34
2.80
2.42
2.86
0.65
0.90
0.95
1.38
1.20
1.50
0.65
1.38
1.20
1.50
0.40
0.63
15.67
16.15
8.97
9.83
10.00
10.65
2.54 (BSC)
INCHES
MIN
0.177
0.092
0.095
0.026
0.037
0.047
0.026
0.047
0.016
0.617
0.353
0.394
DOCUMENT NO.
Z8B00181328
SCALE
0
2.5
0
2.5
5mm
EUROPEAN PROJECTION
0.100 (BSC)
5.08
3
28.70
12.78
2.83
3.00
3.15
MAX
0.193
0.110
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
0.200
3
29.75
13.75
3.45
3.38
3.50
1.130
0.503
0.111
0.118
0.124
1.171
0.541
0.136
0.133
0.138
ISSUE DATE
29-04-2016
REVISION
01
Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
12
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor
IPA50R650CE
RevisionHistory
IPA50R650CE
Revision:2016-07-12,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2012-08-24
Release of final version
2.1
2014-06-12
Release of final datasheet
2.2
2016-06-13
Updated ID ratings, package marking code & package drawing
2.3
2016-07-12
Changed marking information in page 1
TrademarksofInfineonTechnologiesAG
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EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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©2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
13
Rev.2.3,2016-07-12
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