Infineon IPB036N12N3G Optimosâ ¢3 power-transistor Datasheet

IPB036N12N3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
V DS
120
V
R DS(on),max
3.6
mΩ
ID
180
A
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB036N12N3 G
Package
PG-TO263-7
Marking
036N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
180
T C=100 °C
139
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
720
Avalanche energy, single pulse3)
E AS
I D=100 A, R GS=25 Ω
900
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
55/175/56
1)
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
2)
Rev. 2.2
page 1
2009-12-17
IPB036N12N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.5
minimal footprint
-
-
62
6 cm2 cooling area4)
-
-
40
120
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=270 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A
-
2.9
3.6
mΩ
Gate resistance
RG
-
1.4
-
Ω
Transconductance
g fs
98
195
-
S
|V DS|>2|I D|R DS(on)max,
I D=100 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-12-17
IPB036N12N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
10400
13800 pF
-
1320
1760
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
61
-
Turn-on delay time
t d(on)
-
35
-
Rise time
tr
-
52
-
Turn-off delay time
t d(off)
-
76
-
Fall time
tf
-
21
-
Gate to source charge
Q gs
-
52
-
Gate to drain charge
Q gd
-
37
-
-
57
-
V GS=0 V, V DS=60 V,
f =1 MHz
V DD=60 V, V GS=10 V,
I D=100 A, R G=1.6 Ω
ns
Gate Charge Characteristics 5)
V DD=60 V, I D=100 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
158
211
Gate plateau voltage
V plateau
-
5.0
-
Output charge
Q oss
-
182
242
nC
-
-
180
A
-
-
720
-
0.9
1.2
V
-
123
-
ns
-
356
-
nC
V DD=60 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
Rev. 2.2
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=37.5 V, I F=I S,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
page 3
2009-12-17
IPB036N12N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
350
200
180
300
160
140
120
200
I D [A]
P tot [W]
250
150
100
80
60
100
40
50
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
200
T C [°C]
100
limited by on-state
resistance
1 µs
10 µs
100 µs
0.5
102
Z thJC [K/W]
I D [A]
1 ms
DC
10-1
0.2
0.1
10 ms
10
1
0.05
0.02
0.01
single pulse
100
10-1
10-2
100
101
102
10-5
V DS [V]
Rev. 2.2
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-12-17
IPB036N12N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
6
10 V
5V
350
7V
5
6V
5.5 V
300
6V
4
200
R DS(on) [mΩ]
I D [A]
250
5.5 V
150
7V
10 V
3
2
100
5V
1
50
4.5 V
0
0
0
1
2
3
4
5
0
100
200
V DS [V]
300
400
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
400
250
350
200
300
250
g fs [S]
I D [A]
150
200
100
150
100
50
50
175 °C
25 °C
0
0
0
2
4
6
8
Rev. 2.2
0
40
80
120
160
200
I D [A]
V GS [V]
page 5
2009-12-17
IPB036N12N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=100 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
8
4
7
3.5
6
3
5
2.5
2700 µA
270 µA
V GS(th) [V]
R DS(on) [mΩ]
parameter: I D
max
4
typ
2
3
1.5
2
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
Ciss
175 °C, max
104
25 °C
102
175 °C
I F [A]
C [pF]
Coss
103
25 °C, max
10
Crss
1
102
101
100
0
20
40
60
80
V DS [V]
Rev. 2.2
0
0.5
1
1.5
2
V SD [V]
page 6
2009-12-17
IPB036N12N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=100 A pulsed
parameter: T j(start)
parameter: V DD
103
10
60 V
8
40 V
10
2
20 V
6
V GS [V]
I AV [A]
25 °C
100 °C
150 °C
4
101
2
100
0
100
101
102
103
104
0
40
t AV [µs]
80
120
160
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
135
V GS
Qg
V BR(DSS) [V]
130
125
V g s(th)
120
115
Q g(th)
Q sw
Q gs
110
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.2
page 7
2009-12-17
IPB036N12N3 G
PG-TO263-7
Rev. 2.2
page 8
2009-12-17
IPB036N12N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 9
2009-12-17
Similar pages