Infineon IPB057N06N Optimostm power-transistor Datasheet

Type
IPB057N06N
OptiMOSTM Power-Transistor
Product Summary
Features
VDS
60
V
RDS(on),max
5.7
mW
• Superior thermal resistance
ID
45
A
• N-channel, normal level
Qoss
32
nC
• Qualified according to JEDEC1) for target applications
Qg(0V..10V)
27
nC
• Optimized for synchronous rectification
• 100% avalanche tested
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TO263-3
Type
Package
Marking
IPB057N06N
PG-TO263-3
057N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
45
V GS=10 V, T C=100 °C
45
V GS=10 V, T C=25 °C,
R thJA =50K/W
17
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
180
Avalanche energy, single pulse3)
E AS
I D=45 A, R GS=25 W
60
mJ
Gate source voltage
V GS
±20
V
1)
2)
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Rev.2.2
page 1
2012-12-20
IPB057N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
Value
T C=25 °C
83
T A=25 °C,
R thJA=50 K/W
3.0
T j, T stg
W
-55 ... 175
IEC climatic category; DIN IEC 68-1
Parameter
Unit
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
-
-
1.8
Device on PCB
R thJA
minimal footprint
-
-
62
6 cm² cooling area4)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=36 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=45 A
-
4.9
5.7
mW
V GS=6 V, I D=12 A
-
6.4
8.6
-
1.5
2.3
W
36
73
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.2
|V DS|>2|I D|R DS(on)max,
I D=45 A
page 2
2012-12-20
IPB057N06N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2000
2500
-
490
613
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
22
44
Turn-on delay time
t d(on)
-
12
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
7
-
Gate to source charge
Q gs
-
9
-
Gate charge at threshold
Q g(th)
-
5
-
Gate to drain charge
Q gd
-
5
7
Switching charge
Q sw
-
9
-
Gate charge total
Qg
-
27
32
Gate plateau voltage
V plateau
-
4.8
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
24
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
32
-
-
-
45
-
-
180
-
1.0
1.2
V
-
32
51
ns
-
28
-
nC
V DD=30 V, V GS=10 V,
I D=45 A,
R G,ext,ext=3 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=45 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=45 A,
T j=25 °C
V R=30 V, I F=45A ,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.2
page 3
2012-12-20
IPB057N06N
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
50
80
40
60
30
ID [A]
Ptot [W]
100
40
20
20
10
0
0
0
25
50
75
100
125
150
175
200
0
25
50
TC [°C]
75
100
125
150
175
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
102
10 µs
10 ms
1
ZthJC [K/W]
ID [A]
100 µs
1 ms
101
DC
0.2
0.1
0.05
0.1
100
0.02
0.01
single pulse
10-1
10-1
100
101
102
VDS [V]
Rev.2.2
0.5
0.01
0.00001
0.0001
0.001
0.01
0.1
1
tp [s]
page 4
2012-12-20
IPB057N06N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
180
16
7V
10 V
160
14
6V
140
5.5 V
5V
6V
12
100
RDS(on) [mW]
ID [A]
120
5.5 V
80
10
8
7V
6
60
10 V
5V
4
40
2
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
VDS [V]
80
100 120 140 160 180
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
180
80
160
70
140
60
120
100
gfs [S]
ID [A]
50
80
40
30
60
20
40
20
10
175 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.2
0
5
10
15
20
25
30
35
40
45
ID [A]
page 5
2012-12-20
IPB057N06N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=45 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
12
5
11
10
4
9
max
7
3
VGS(th) [V]
RDS(on) [mW]
8
6
typ
5
360 mA
36 µA
2
4
3
1
2
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
102
IF [A]
1000
C [pF]
103
Coss
102
101
100
25 °C
175 °C
101
Crss
100
10
0
20
40
60
VDS [V]
Rev.2.2
0
0.5
1
1.5
2
VSD [V]
page 6
2012-12-20
IPB057N06N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=45 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12 V
48 V
100 °C
8
VGS [V]
IAV [A]
25 °C
125 °C
10
6
4
2
1
1
10
100
0
1000
0
5
tAV [µs]
10
15
20
25
30
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
66
62
V gs(th)
58
54
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.2
page 7
2012-12-20
IPB057N06N
Package Outline
Rev.2.2
PG-TO263-3
page 8
2012-12-20
IPB057N06N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.2
page 9
2012-12-20
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