Infineon IPB120P04P4L-03 P-channel - logic level - enhancement mode Datasheet

IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
OptiMOS®-P2 Power-Transistor
Product Summary
VDS
-40
V
RDS(on) (SMD Version)
3.1
mW
ID
-120
A
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB120P04P4L-03
PG-TO263-3-2
4PP04L03
IPI120P04P4L-03
PG-TO262-3-1
4PP04L03
IPP120P04P4L-03
PG-TO220-3-1
4PP04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25°C,
V GS=-10V
T C=100°C,
Value
-120
V GS=-10V2)
-114
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
-480
Avalanche energy, single pulse
E AS
I D=-60A
78
Avalanche current, single pulse
I AS
-
-120
A
Gate source voltage
V GS
-
±163)
V
Power dissipation
P tot
T C=25 °C
136
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 1.1
page 1
mJ
2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1.1
Thermal resistance, junction ambient, leaded
R thJA
-
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area4)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= -1mA
-40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-340µA
-1.2
-1.7
-2.2
Zero gate voltage drain current
I DSS
V DS=-32V, V GS=0V,
T j=25°C
-
-0.05
-1
T j=125°C2)
-
-20
-200
V DS=-32V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=-16V, V DS=0V
-
-
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5V, I D=-100A
-
4.0
5.2
mW
V GS=-4.5V,
I D=-100A,
SMD version
-
3.7
4.9
V GS=-10V, I D=-100A
-
2.9
3.4
V GS=-10V, I D=-100A,
SMD version
-
2.6
3.1
Rev. 1.1
page 2
2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
11380
15000 pF
-
3410
5000
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
135
270
Turn-on delay time
t d(on)
-
21
-
Rise time
tr
-
16
-
Turn-off delay time
t d(off)
-
85
-
Fall time
tf
-
57
-
Gate to source charge
Q gs
-
40
52
Gate to drain charge
Q gd
-
32
64
Gate charge total
Qg
-
180
234
Gate plateau voltage
V plateau
-
3.5
-
V
-
-
-120
A
-
-
-480
-
-1
-1.3
-
54
ns
-
60
nC
V GS=0V, V DS=-25V,
f =1MHz
V DD=-20V,
V GS=-10V, I D=-120A,
R G=3.5W
ns
Gate Charge Characteristics2)
V DD=-32V,
I D=-120A,
V GS=0 to -10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25°C
V GS=0V, I F=-100A,
T j=25°C
V R=-20V, I F=-50A,
di F/dt =-100A/µs
1)
Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry -171A at 25°C.
2)
Defined by design. Not subject to production test.
3)
VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C
V
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS ≤ -6V; SMD
160
140
140
120
120
100
80
-ID [A]
Ptot [W]
100
80
60
60
40
40
20
20
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
100 µs
100
0.5
-ID [A]
ZthJC [K/W]
1 ms
10-1
0.1
0.05
10
10-2
0.01
single pulse
1
10-3
0.1
1
10
100
-VDS [V]
Rev. 1.1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
20
640
-2.8 V -3 V
-10 V
-3.5 V
-5 V
18
560
16
480
-4.5 V
14
RDS(on) [mW]
-ID [A]
400
320
-4 V
12
10
240
8
160
-3.5 V
80
6
-4 V
-4.5 V
-5 V
4
-3 V
-10V
2
0
0
1
2
3
4
5
0
6
40
-VDS [V]
80
120
-ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = -6V
R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD
parameter: T j
640
4.5
25 °C
560
-55 °C
175 °C
480
3.5
RDS(on) [mW]
-ID [A]
400
320
240
2.5
160
80
1.5
0
2
3
4
-60
5
20
60
100
140
180
Tj [°C]
-VGS [V]
Rev. 1.1
-20
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2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
2.5
105
2
104
Ciss
Coss
C [pF]
-VGS(th) [V]
-3400µA
-340µA
1.5
103
102
1
Crss
101
0.5
-60
-20
20
60
100
140
0
180
5
10
Tj [°C]
15
20
25
30
140
180
-VDS [V]
11 Typical forward diode characteristicis
12 Drain-source breakdown voltage
IF = f(VSD)
V BR(DSS) = f(T j); I D = -1 mA
parameter: T j
45
103
44
43
42
175 °C
-VBR(DSS) [V]
-IF [A]
102
25 °C
41
40
39
101
38
37
36
100
35
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD [V]
Rev. 1.1
-60
-20
20
60
100
Tj [°C]
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IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
13 Typ. gate charge
14 Gate charge waveforms
V GS = f(Q gate); I D = -120 A pulsed
parameter: V DD
12
V GS
10
Qg
8
-8V
-VGS [V]
-32V
6
4
2
Q gate
Q gs
Q gd
0
0
20
40
60
80
100
120
140
160
Qgate [nC]
Rev. 1.1
page 7
2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Revision History
Version
Rev. 1.1
Date
Changes
1.0
2011-01-24 Final Data Sheet
1.1
2015-05-27 Update of marking
page 9
2015-05-27
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