Infineon IPB80N04S3-H4 Optimos-t power-transistor Datasheet

IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
OptiMOS®-T Power-Transistor
Product Summary
V DS
40
V
R DS(on),max (SMD version)
4.5
mΩ
ID
80
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB80N04S3-H4
PG-TO263-3-2
3N04H4
IPI80N04S3-H4
PG-TO262-3-1
3N04H4
IPP80N04S3-H4
PG-TO220-3-1
3N04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25°C, V GS=10V
T C=100 °C,
V GS=10 V2)
Value
80
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse2)
E AS
I D=40 A
370
mJ
Avalanche current, single pulse
I AS
-
80
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
115
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 1.0
page 1
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1.3
Thermal resistance, junction ambient, leaded
R thJA
-
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=65 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
-
1
-
-
100
V DS=40 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=80 A
-
3.9
4.8
mΩ
V GS=10 V, I D=80 A,
SMD version
-
3.6
4.5
Rev. 1.0
page 2
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
3000
3900
-
850
1100
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
130
200
Turn-on delay time
t d(on)
-
20
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
30
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
18
24
Gate to drain charge
Q gd
-
12
18
Gate charge total
Qg
-
46
60
Gate plateau voltage
V plateau
-
5.6
-
V
-
-
80
A
-
-
320
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=3.5 Ω
pF
ns
Gate Charge Characteristics2)
V DD=32 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.95
1.3
V
Reverse recovery time2)
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
-
35
-
ns
Reverse recovery charge2)
Q rr
-
35
-
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 1.3K/W the chip is able to carry 119A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
120
100
100
80
80
I D [A]
P tot [W]
60
60
40
40
20
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
100
0.5
100 µs
I D [A]
Z thJC [K/W]
1 ms
0.1
10-1
0.05
0.01
10
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
single pulse
page 4
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
20
320
5.5 V
7V
280
18
10 V
16
240
6.5 V
14
160
R DS(on) [mΩ]
I D [A]
200
6V
120
12
10
6V
8
5.5 V
80
6.5 V
6
7V
40
4
5V
10 V
2
0
0
2
4
6
0
8
20
40
60
80
100
120
140
180
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD
parameter: T j
360
-55 °C
7
25 °C
320
6
280
240
R DS(on) [mΩ]
I D [A]
175 °C
200
160
5
4
120
80
3
40
0
2
3
4
5
6
7
8
V GS [V]
Rev. 1.0
2
-60
-20
20
60
100
T j [°C]
page 5
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
3.5
V GS(th) [V]
3
C [pF]
Ciss
650µA
65µA
2.5
103
Coss
2
1.5
Crss
102
1
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
V DS [V]
T j [°C]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: T j(start)
100
103
25 °C
100 °C
150 °C
I F [A]
I AV [A]
102
175 °C
10
25 °C
1
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.0
1
10
100
1000
t AV [µs]
page 6
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
55
800
700
50
600
20 A
V BR(DSS) [V]
E AS [mJ]
500
400
300
45
40
40 A
200
35
80 A
100
30
0
25
75
125
-60
175
-20
T j [°C]
20
60
100
140
180
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 80 A pulsed
parameter: V DD
12
V GS
8V
Qg
32 V
10
V GS [V]
8
6
V g s(th)
4
2
Q g (th)
Q sw
Q gs
0
0
10
20
30
40
Q gate
Q gd
50
Q gate [nC]
Rev. 1.0
page 7
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2008-08-01
IPB80N04S3-H4
IPI80N04S3-H4, IPP80N04S3-H4
Revision History
Version
Rev. 1.0
Date
Changes
page 9
2008-08-01
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