Infineon IPB80N08S2-07 Optimosâ® power-transistor Datasheet

IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
OptiMOS® Power-Transistor
Product Summary
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
V DS
75
V
R DS(on),max (SMD version)
7.1
mΩ
ID
80
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB80N08S2-07
PG-TO263-3-2
SP0002-19048
2N0807
IPP80N08S2-07
PG-TO220-3-1
SP0002-19040
2N0807
IPI80N08S2-07
PG-TO262-3-1
SP0002-19043
2N0807
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
80
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse2)
E AS
I D=80A
810
mJ
Gate source voltage4)
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
page 1
2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.5
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
75
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=75 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=80 A,
-
5.8
7.4
mΩ
V GS=10 V, I D=80 A,
SMD version
-
5.5
7.1
Rev. 1.0
page 2
2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
4700
-
-
1260
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
580
-
Turn-on delay time
t d(on)
-
26
-
Rise time
tr
-
50
-
Turn-off delay time
t d(off)
-
61
-
Fall time
tf
-
30
-
Gate to source charge
Q gs
-
25
37
Gate to drain charge
Q gd
-
69
116
Gate charge total
Qg
-
144
180
Gate plateau voltage
V plateau
-
5.4
-
V
-
-
80
A
-
-
320
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=80 A, R G=2.2 Ω
pF
ns
Gate Charge Characteristics2)
V DD=60 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=40 V, I F=I S,
di F/dt =100 A/µs
-
110
140
ns
Reverse recovery charge2)
Q rr
V R=40 V, I F=I S,
di F/dt =100 A/µs
-
470
590
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 132A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagram 13.
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 10 V
350
100
300
80
60
200
I D [A]
P tot [W]
250
150
40
100
20
50
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
0.5
10 µs
10-1
100 µs
100
0.1
I D [A]
Z thJC [K/W]
1 ms
0.05
10-2
10
0.01
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-7
page 4
2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
300
40
7V
10 V
35
250
30
RDS(on) [mW]
I D [A]
200
150
6V
25
20
100
5.5 V
15
5V
10
50
6.5 V
10 V
4.5 V
0
5
0
2
4
6
8
10
0
20
40
60
80
100
120
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
320
150
280
125
240
100
g fs [S]
I D [A]
200
160
75
120
50
80
25
40
175 °C
25 °C
0
2
3
4
0
-55 °C
5
6
7
8
V GS [V]
Rev. 1.0
0
50
100
150
200
I D [A]
page 5
2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
9 Typ. Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 80 A; VGS = 10 V
parameter: I D
4
12
3.5
10
1250 µA
8
250 µA
V GS(th) [V]
R DS(on) [mΩ]
3
6
2.5
2
4
1.5
2
1
-60
-20
20
60
100
140
-60
180
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
103
104
102
I F [A]
C [pF]
Ciss
Coss
103
175 °C
101
25 °C
Crss
102
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
page 6
2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 80 A pulsed
parameter: I D = 80A
parameter: V DD
900
12
800
15V
60V
10
700
8
500
V GS [V]
E AS [mJ]
600
400
300
6
4
200
2
100
0
0
25
75
125
0
175
20
40
60
T j [°C]
80
100
120
140
160
Q gate [nC]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
90
V GS
Qg
V BR(DSS) [V]
85
80
75
70
Q gate
Q gs
Q gd
65
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
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D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-03
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