Infineon IPD082N10N3G N-channel, normal level Datasheet

OptiMOS™3 Power-Transistor
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
VDS
100
V
RDS(on),max (TO 252)
8.2
mW
ID
80
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
Package
PG-TO220-3
PG-TO262-3
PG-TO263-3
PG-TO252-3
Marking
086N10N
086N10N
083N10N
082N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
80
T C=100 °C
58
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse
E AS
I D=73 A, R GS=25 W
110
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
125
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
2)
55/175/56
J-STD20 and JESD22
See figure 3
Rev. 2.6
page 1
2013-07-09
Parameter
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.2
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
50
100
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=75 µA
2
2.7
3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=73 A,
TO 220, TO 262
-
7.4
8.6
mW
V GS=10 V, I D=73 A,
TO263
-
7.2
8.3
V GS=10 V, I D=73 A,
TO 252
-
7
8.2
V GS=6 V, I D=36 A, TO
220, TO 262
-
9.3
15.4
V GS=6 V, I D=36 A, TO
263
-
9.0
15.1
V GS=6 V, I D=36 A, TO
252
-
8.9
15
-
1
-
W
45
89
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.6
page 2
2013-07-09
Parameter
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2990
3980
-
523
696
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
21
-
Turn-on delay time
t d(on)
-
18
-
Rise time
tr
-
42
-
Turn-off delay time
t d(off)
-
31
-
Fall time
tf
-
8
-
Gate to source charge
Q gs
-
15
-
Gate to drain charge
Q gd
-
8
-
Switching charge
Q sw
-
14
-
Gate charge total
Qg
-
42
55
Gate plateau voltage
V plateau
-
4.9
-
Output charge
Q oss
-
55
73
nC
-
-
80
A
-
-
320
-
1.0
1.2
V
-
71
-
ns
-
123
-
nC
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=73 A, R G,ext=1.6 W
pF
ns
Gate Charge Characteristics4)
V DD=50 V, I D=73 A,
V GS=0 to 10 V
V DD=50 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
V R=50 V, I F=73 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.6
page 3
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
150
100
125
80
100
ID [A]
Ptot [W]
60
75
40
50
20
25
0
0
0
50
100
150
200
0
50
TC [°C]
100
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
1 µs
limited by on-state
resistance
10 µs
102
100 µs
100
ZthJC [K/W]
0.5
ID [A]
1 ms
101
10 ms
0.2
0.1
0.05
10-1
DC
0.02
100
0.01
single pulse
10-1
10-2
10-1
100
101
102
103
10-4
10-3
10-2
10-1
100
tp [s]
VDS [V]
Rev. 2.6
10-5
page 4
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
10 V
18
4.5 V
250
7.5 V
15
5V
RDS(on) [mW]
200
ID [A]
6V
150
5.5 V
12
6V
9
7.5 V
10 V
100
6
5V
50
3
4.5 V
0
0
0
1
2
3
4
5
0
20
40
VDS [V]
60
80
100
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
150
120
100
100
ID [A]
gfs [S]
80
50
60
40
25 °C
20
175 °C
0
0
0
2
4
6
8
VGS [V]
Rev. 2.6
0
40
80
120
ID [A]
page 5
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=73 A; V GS=10 V; TO 220
V GS(th)=f(T j); V GS=V DS
parameter: I D
20
4
18
3.5
16
3
750 µA
2.5
12
VGS(th) [V]
RDS(on) [mW]
14
98 %
10
typ
8
75 µA
2
1.5
6
1
4
0.5
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
175 °C, 98%
103
102
Coss
25 °C
25 °C, 98%
IF [A]
C [pF]
175 °C
102
101
Crss
101
100
0
20
40
60
80
VDS [V]
Rev. 2.6
0
0.5
1
1.5
2
VSD [V]
page 6
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=73 A pulsed
parameter: T j(start)
parameter: V DD
100
10
8
80 V
25 °C
50 V
100 °C
20 V
VGS [V]
IAS [A]
6
150 °C
10
4
2
1
0
1
10
100
1000
0
10
tAV [µs]
20
30
40
50
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
V GS
Qg
VBR(DSS) [V]
105
100
V gs(th)
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.6
page 7
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
PG-TO220-3: Outline
Rev. 2.6
page 8
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
PG-TO262-3
Rev. 2.6
page 9
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
PG-TO-263 (D²-Pak)
Rev. 2.6
page 10
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
PG-TO-252 (D-Pak)
Rev. 2.6
page 11
2013-07-09
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.6
page 12
2013-07-09
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