Infineon IPD70N10S3-12 Optimos-t power-transistor Datasheet

IPD70N10S3-12
OptiMOS®-T Power-Transistor
Product Summary
V DS
100
V
R DS(on),max
11.1
mΩ
ID
70
A
Features
PG-TO252-3-11
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD70N10S3-12
PG-TO252-3-11
QN1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
Value
T C=25°C, V GS=10V
70
T C=100°C, V GS=10V1)
48
Unit
A
Pulsed drain current1)
I D,pulse
T C=25°C
280
Avalanche energy, single pulse1)
E AS
I D=35A
410
mJ
Avalanche current, single pulse
I AS
70
A
Gate source voltage
V GS
±20
V
Power dissipation
P tot
125
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
page 1
2008-04-22
IPD70N10S3-12
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
-
1.2
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
40
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
100
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=83µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=80V, V GS=0V,
T j=25°C
-
0.01
0.1
-
1
100
V DS=80V, V GS=0V,
T j=125°C1)
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10V, I D=70A
-
9.2
11.1
mΩ
Rev. 1.0
page 2
2008-04-22
IPD70N10S3-12
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
3350
4355
-
940
1222
Dynamic characteristics1)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
105
158
Turn-on delay time
t d(on)
-
17
-
Rise time
tr
-
8
-
Turn-off delay time
t d(off)
-
25
-
Fall time
tf
-
8
-
Gate to source charge
Q gs
-
18
23
Gate to drain charge
Q gd
-
16
24
Gate charge total
Qg
-
51
65
Gate plateau voltage
V plateau
-
5.5
-
V
-
-
70
A
-
-
280
0.6
1
1.2
V
-
100
-
ns
-
265
-
nC
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=70A, R G=3.5Ω
pF
ns
Gate Charge Characteristics1)
V DD=80V, I D=70A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current1)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=70A,
T j=25°C
Reverse recovery time1)
t rr
V R=50V, I F=I S,
di F/dt =100A/µs
Reverse recovery charge1)
Q rr
1)
T C=25°C
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2008-04-22
IPD70N10S3-12
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
80
140
70
120
60
100
50
I D [A]
P tot [W]
80
60
40
30
40
20
20
10
0
0
0
50
100
150
0
200
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
100
10 µs
0.5
100
Z thJC [K/W]
I D [A]
100 µs
1 ms
0.1
-1
10
0.05
0.01
10
10-2
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-6
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2008-04-22
IPD70N10S3-12
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
280
35
5.5 V
10 V
6V
240
7V
200
R DS(on) [mΩ]
25
160
I D [A]
6.5 V
120
6V
15
80
6.5 V
5.5V
40
7V
10 V
5V
0
5
0
1
2
3
4
5
0
20
40
V DS [V]
60
80
100
120
140
180
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 70 A; V GS = 10 V
parameter: T j
250
25
-55 °C
200
20
I D [A]
150
175 °C
100
R DS(on) [mΩ]
25 °C
10
50
0
3
4
5
6
7
V GS [V]
Rev. 1.0
15
5
-60
-20
20
60
100
T j [°C]
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2008-04-22
IPD70N10S3-12
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
Ciss
V GS(th) [V]
3
C [pF]
3.5
400 µA
103
Coss
80 µA
2.5
102
2
Crss
1.5
101
1
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
V DS [V]
T j [°C]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: T j(start)
100
103
25 °C
100 °C
150 °C
I F [A]
I AV [A]
102
101
175 °C
25 °C
0.6
0.8
100
1
0
0.2
0.4
1
1.2
1.4
V SD [V]
Rev. 1.0
10
0.1
1
10
100
1000
t AV [µs]
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2008-04-22
IPD70N10S3-12
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
115
900
17.5 A
800
110
700
V BR(DSS) [V]
E AS [mJ]
600
500
35 A
400
105
100
300
70 A
200
95
100
90
0
25
75
125
-55
175
-15
T j [°C]
25
65
105
145
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 70 A pulsed
parameter: V DD
10
V GS
9
20 V
Qg
80 V
8
7
V GS [V]
6
5
V g s(th)
4
3
2
Q g (th)
Q sw
1
Q gs
0
0
10
20
30
40
Q gate
Q gd
50
Q gate [nC]
Rev. 1.0
page 7
2008-04-22
IPD70N10S3-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2008-04-22
IPD70N10S3-12
Revision History
Version
Rev. 1.0
Date
Changes
page 9
2008-04-22
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