IPD90N06S4-07 OptiMOS®-T2 Power-Transistor Product Summary V DS 60 V R DS(on),max 6.9 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11 4N0607 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 90 T C=100°C, V GS=10V2) 63 Unit A Pulsed drain current1) I D,pulse T C=25°C 360 Avalanche energy, single pulse1) E AS I D=45A 67 mJ Avalanche current, single pulse I AS - 90 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 79 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 − Rev. 1.0 page 1 2009-03-24 IPD90N06S4-07 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 1.9 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=40µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - 0.01 1 - 5 100 V DS=60V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=90A - 5.7 6.9 mΩ Rev. 1.0 page 2 2009-03-24 IPD90N06S4-07 Parameter Symbol Values Conditions Unit min. typ. max. - 3460 4500 - 850 1105 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 35 70 Turn-on delay time t d(on) - 15 - Rise time tr - 3 - Turn-off delay time t d(off) - 23 - Fall time tf - 5 - Gate to source charge Q gs - 21 27 Gate to drain charge Q gd - 5.5 11 Gate charge total Qg - 43 56 Gate plateau voltage V plateau - 6.0 - V - - 90 A - - 360 V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=90A, R G=3.5Ω pF ns Gate Charge Characteristics1) V DD=48V, I D=90A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=90A, T j=25°C 0.6 0.95 1.3 V Reverse recovery time1) t rr V R=30V, I F=90A, di F/dt =100A/µs - 39 - ns Reverse recovery charge1) Q rr - 38 - nC 1) T C=25°C Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 IPD90N06S4-07 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 90 100 80 80 70 60 60 I D [A] P tot [W] 50 40 40 30 20 20 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 0.5 10 µs 100 Z thJC [K/W] I D [A] 0.1 100 µs 0.05 10-1 0.01 10 10-2 single pulse 1 ms 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2009-03-24 IPD90N06S4-07 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 360 20 6V 5V 320 7V 8V 18 10 V 8V 280 16 240 200 R DS(on) [mΩ] I D [A] 14 7V 160 12 10 120 6V 8 80 5V 10 V 6 40 0 4 0 1 2 3 4 5 6 0 90 180 V DS [V] 270 360 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 90 A; V GS = 10 V parameter: T j 360 11 -55 °C 320 10 280 9 25 °C R DS(on) [mΩ] I D [A] 240 200 160 175 °C 8 7 120 6 80 5 40 0 2 3 4 5 6 7 8 V GS [V] Rev. 1.0 4 -60 -20 20 60 100 140 180 T j [°C] page 5 2009-03-24 IPD90N06S4-07 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss C [pF] V GS(th) [V] 3.5 400 µA 3 103 Coss 40 µA 2.5 102 2 Crss 101 1.5 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 100 103 25 °C 100 °C 102 10 I F [A] I AV [A] 150 °C 175 °C 25 °C 1 10 1 100 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 0.1 1 10 100 1000 t AV [µs] page 6 2009-03-24 IPD90N06S4-07 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 45 A V BR(DSS) = f(T j); I D = 1 mA 66 80 64 V BR(DSS) [V] E AS [mJ] 60 40 62 60 20 58 56 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 90 A pulsed parameter: V DD 10 12 V V GS 48 V 9 Qg 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 10 20 30 40 Q gate Q gd 50 Q gate [nC] Rev. 1.0 page 7 2009-03-24 IPD90N06S4-07 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-24 IPD90N06S4-07 Revision History Version Date Changes Revision 1.0 Rev. 1.0 24.03.2009 Final data sheet page 9 2009-03-24