Infineon IPP07N03L Optimos buck converter sery Datasheet

IPP07N03L
IPB07N03L
OptiMOS Buck converter series
Product Summary
Feature
•N-Channel
•Logic Level
•Low On-Resistance R DS(on)
VDS
30
V
RDS(on) max. SMD version
5.9
mΩ
ID
80
A
•Excellent Gate Charge x RDS(on) product (FOM)
P- TO263 -3-2
P- TO220 -3-1
•Superior thermal resistance
•175°C operating temperature
•Avalanche rated
•dv/dt rated
•Ideal for fast switching buck converters
Type
IPP07N03L
Package
Ordering Code
P- TO220 -3-1 Q67042-S4051
Marking
IPB07N03L
P- TO263 -3-2 Q67042-S4082
07N03L
07N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Value
Unit
A
80
TC = 25°C ,1)
80
Pulsed drain current
ID puls
320
TC=25°C
EAS
30
Repetitive avalanche energy, limited by Tjmax 2)
EAR
15
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
150
W
Avalanche energy, single pulse
mJ
ID=20A, V DD=25V, RGS=25Ω
kV/µs
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
TC=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
-55... +175
°C
55/175/56
Page 1
2002-10-17
IPP07N03L
IPB07N03L
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
0.68
1
@ min. footprint
-
-
62
@ 6 cm2 cooling area 3)
-
-
40
Characteristics
Thermal resistance, junction - case
RthJC
SMD version, device on PCB:
RthJA
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
30
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
VGS=0V, I D=1mA
Gate threshold voltage, V GS = VDS
ID = 80 µA
Zero gate voltage drain current
µA
IDSS
VDS=30V, V GS=0V, T j=25°C
-
0.01
1
VDS=30V, V GS=0V, T j=125°C
-
10
100
-
1
100
Gate-source leakage current
IGSS
nA
VGS=20V, VDS=0V
Drain-source on-state resistance
RDS(on)
mΩ
VGS=4.5V, ID=50A
-
7
10
VGS=4.5V, ID=50A, SMD version
-
6.6
9.7
VGS=10V, ID=50A
-
5
6.2
VGS=10V, ID=50A, SMD version
-
4.6
5.9
Drain-source on-state resistance4)
RDS(on)
1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 123A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2002-10-17
IPP07N03L
IPB07N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
44
88
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max ,
ID=80A
Input capacitance
Ciss
VGS=0V, VDS =25V,
-
1900
2350
Output capacitance
Coss
f=1MHz
-
740
990
Reverse transfer capacitance
Crss
-
175
265
Gate resistance
RG
-
2.2
-
Ω
Turn-on delay time
t d(on)
VDD=15V, VGS=10V,
-
10.4
15.6
ns
Rise time
tr
ID=20A,
-
23
35
-
73
109
-
61
91
-
5
7
-
16
25
-
27
34
-
26.4
33
Turn-off delay time
t d(off)
Fall time
tf
RG =3.6Ω
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
VDD=15V, ID=20A
VDD=15V, ID=20A,
nC
VGS=0 to 5V
Output charge
Q oss
VDS=15V, ID =20A,
nC
VGS=0V
Gate plateau voltage
V(plateau)
VDD=15V, ID=20A
-
3.1
-
V
IS
TC=25°C
-
-
80
A
-
-
320
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
VGS =0V, IF=80A
-
0.9
1.3
V
Reverse recovery time
trr
VR =15V, IF =lS ,
-
41
51
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
46
58
nC
Page 3
2002-10-17
IPP07N03L
IPB07N03L
1 Power dissipation
2 Drain current
Ptot = f (TC)
ID = f (TC)
parameter: VGS≥ 10 V
160
IPP07N03L
90
A
W
70
120
60
ID
P tot
IPP07N03L
100
50
80
40
60
30
40
20
20
10
0
0
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( VDS )
ZthJC = f (tp)
parameter : D = 0 , T C = 25 °C
parameter : D = tp/T
10 3
IPP07N03L
10 1
IPP07N03L
K/W
A
tp = 22.0µs
=
10 2
DS
(on
)
100 µs
10 -1
R
ID
ZthJC
V
DS
/I
D
10 0
10 -2
D = 0.50
0.20
1 ms
10
1
10
-3
0.10
0.05
10 ms
0.02
single pulse
DC
10 -4
10 0 -1
10
10
0
10
1
V
10
2
10 -5 -7
10
0.01
10
-6
10
-5
10
-4
10
-3
10
-2
s
tp
VDS
Page 4
2002-10-17
10
0
IPP07N03L
IPB07N03L
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=25°C
parameter: t p = 80 µs
RDS(on) = f (ID)
190
parameter: VGS
IPP07N03L
Ptot = 150W
20
A
d
mΩ
h
i
e
f
g
VGS [V]
a
3.0
g
140
120
100
b
3.2
c
3.4
d
3.6
e
3.8
f
4.0
g
4.5
h
10.0
f i
80
16
RDS(on)
160
ID
IPP07N03L
14
12
10
5.0
8
e
60
6
h
d
40
c
20
2
b
a
0
0
i
4
1
2
3
4
5
V
6
0
0
8
VGS [V] =
d
3.6
e
f
3.8 4.0
20
40
g
h
i
4.5 10.0 5.0
60
80
100
120
A
160
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max
gfs = f(ID); Tj=25°C
parameter: t p = 80 µs
parameter: gfs
160
120
S
A
100
90
gfs
ID
120
100
80
70
80
60
50
60
40
40
30
20
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V 5
VGS
Page 5
0
0
20
40
60
80
120
A
ID
2002-10-17
IPP07N03L
IPB07N03L
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : ID = 50 A, V GS = 10 V
parameter: VGS = VDS
IPP07N03L
3
15
mΩ
V
V GS(th)
RDS(on)
12
11
10
9
8
1.5
98%
7
1mA
2
6
83µA
typ
5
1
4
3
0.5
2
1
0
-60
-20
20
60
100
140
°C
0
-60
200
-20
20
60
100
Tj
180
°C
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS=0V, f=1 MHz
parameter: Tj , tp = 80 µs
10 4
10 3
IPP07N03L
A
pF
Ciss
C
IF
10 2
Coss
10 3
10 1
Tj = 25 °C typ
Crss
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
0
5
10
15
20
V
30
10 0
0
0.4
0.8
1.2
1.6
2
2.4 V
VSD
VDS
Page 6
2002-10-17
3
IPP07N03L
IPB07N03L
13 Typ. avalanche energy
15 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
par.: I D = 20 A, V DD = 25 V, RGS = 25 Ω
parameter: I D=10 mA
36
30
IPP07N03L
V
V(BR)DSS
E AS
mJ
20
34
33
32
15
31
30
10
29
5
28
0
25
45
65
85
105
125
145
°C 185
Tj
27
-60
-20
20
60
100
140
°C
Tj
14 Typ. gate charge
VGS = f (Q Gate)
parameter: I D = 20 A pulsed
16
IPP07N03L
V
VGS
12
10
8
0.2 VDS max
0.5 VDS max
6 0.8 VDS max
4
2
0
0
10
20
30
40
50
nC
65
Q Gate
Page 7
2002-10-17
200
IPP07N03L
IPB07N03L
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Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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Page 8
2002-10-17
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