Infineon IPP084N06L3G Optimostm3 power-transistor Datasheet

IPB081N06L3 G IPP084N06L3 G
Jf]R
™
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9I
R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64
R - @? >2 I- '
R ) AE:> :K65 E649? @=
@8J 7@C 4@? G6CE6CD
I9
.(
K
0&)
Z"
-(
6
R I46=
=
6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' R( 492 ? ? 6=
=
@8:4 =
6G6=
R
2 G2 =
2 ? 496 E6DE
65
R* 3 7C66 A=
2E
:? 8 , @" - 4@> A=
:2 ? E
R+ F2 =
:7:65 2 44@C5:? 8 E@ $ )#
7@CE2 C86E2 AA=
:42 E:@? D
R" 2 =
@86? 7C66 2 44@C5:? 8 E@ # Type
#* ( & !
#* * ( & !
Package
F=%JE*.+%+
F=%JE**(%+
Marking
(0)D(.B
(0,D(.B
Maximum ratings, 2 ET W U F? =
6DD @E96CH:D6 DA64:7:65
Parameter
Symbol Conditions
@? E
:? F@FD 5C
2 :? 4FCC6? E
I9
T 8 U
T 8
Value
*#
-(
U
Unit
6
-(
* F=
D65 5C2 :? 4FCC6? E+#
I 9$]bY`R
T 8 U
*((
G2 =
2 ? 496 6? 6C8J D:? 8=
6 AF=
D6,#
E 6I
I 9 ,+
Z@
!2 E6 D@FC46 G@=
E2 86
V =I
r*(
K
* @H6C5:DD:A2 E:@?
P a\a
/1
L
) A6C2 E:? 8 2 ? 5 DE@C2 86 E6> A6C2 EFC6
T W T `aT
)#
*#
$ - . 2 ? 5 $ - FC
C
6? E:D =
:> :E65 3 J 3 @? 5H:C
6 H:E9 2 ? R aU@8
+#
- 66 7:8FC
6 7@C> @C
6 56E
2 :=
65 :? 7@C
> 2 E:@?
,#
- 66 7:8FC
6 7@C> @C
6 56E
2 :=
65 :? 7@C
>2 E
:@?
, 6G R =I "
T 8 U
U
% 0 E
96 49:A :D 2 3 =
6 E@ 42 C
C
J A2 86
IPB081N06L3 G IPP084N06L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
)&1
Thermal characteristics
.96C> 2 =C6D:DE2 ? 46 ;F? 4E:@?
42 D6
.96C> 2 =C6D:DE2 ? 46
;F? 4E
:@?
R aU@8
R aU@6
2 > 3 :6? E
> :? :> 2 =7@@EAC:? E
A'L
-#
%
%
,(
.(
%
%
)&*
)&/
*&*
%
(&)
)
%
)(
)((
%
)
)((
[6
%
/&(
0&,
Z"
V =I / I 9 %
1&/
),&+
V =I
/ I 9 "IC9#
%
.&/
0&)
%
1&,
),
%
(&1
%
"
+-
.1
%
I
4> W 4@@=
:? 8 2 C62
Electrical characteristics, 2 ET W U F? =
6DD @E96CH:D6 DA64:7:65
Static characteristics
C2 :? D@FC46 3 C62 <5@H? G@=
E2 86
V "7H#9II V =I
/ I 9
>
!2 E6 E9C6D9@=
5 G@=
E2 86
V =I"aU#
V 9I4V =I I 9 X
16C@ 82 E6 G@=
E2 86 5C
2 :? 4FCC6? E
I 9II
V 9I / V =I
T W U
/
V 9I / V =I
T W U
/
/
!2 E6 D@FC46 =
62 <2 86 4FCC6? E
I =II
V =I / V 9I
C2 :? D@FC46 @? DE2 E6 C6D:DE2 ? 46
R 9I"\[#
V =I
/ I 9 C2 :? D@FC46 @? DE2 E6 C6D:DE2 ? 46
R 9I"\[#
V =I / I 9 "IC9#
!2 E6 C6D:DE
2 ? 46
R=
J_N[`P\[QbPaN[PR
g S`
-#
6G:46 @? > > I > > I > > 6A@IJ * 4@? ? 64E
:@? * :D G6C
E:42 =:? DE
:=
=2 :C
, 6G hV 9Ih5*hI 9hR 9I"\[#ZNe
I 9 , H:E9 4>* @? 6 =
2 J6C
A2 86 K
t6
X> E
9:4< 4@AA6C2 C
62 7@C5C
2 :?
IPB081N06L3 G IPP084N06L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
+/((
,1((
%
.1(
1*(
Dynamic characteristics
#? AFE42 A2 4:E2 ? 46
C V``
V =I / V 9I f ' " K
/
) FEAFE42 A2 4:E2 ? 46
C \``
, 6G6CD6 EC2 ? D76C42 A2 4:E2 ? 46
C _``
%
+)
%
.FC? @? 56=
2 J E:> 6
t Q"\[#
%
)-
%
, :D6 E:> 6
t_
%
*.
%
.FC? @7756=
2 J E:> 6
t Q"\SS#
%
+/
%
tS
%
/
%
!2 E6 E@ D@FC46 492 C86
Q T`
%
),
%
!2 E6 E@ 5C2 :? 492 C86
Q TQ
%
-
%
%
)*
%
2=
=E:> 6
V 99 / V =I
/
I 9 R = "
]<
[`
!2 E6 92 CT6 92 C2 4E6C:DE
:4D.#
V 99 / I 9 V =I E@ /
[8
- H:E49:? 8 492 C86
Q `d
!2 E6 492 C86 E@E
2=
QT
%
**
*1
!2 E6 A=
2 E62 F G@=
E
2 86
V ]YNaRNb
%
+&0
%
) FEAFE492 C86
Q \``
%
+,
,-
[8
%
%
-(
6
%
%
*((
%
)&(
)&*
K
%
,(
%
[`
%
+1
%
[8
V 99 / V =I
/
K
Reverse Diode
:@56 4@? E:? @FD 7@CH2 C5 4FCC
6? E
II
:@56 AF=
D6 4FCC
6? E
I I$]bY`R
:@56 7@CH2 C5 G@=
E2 86
V I9
, 6G6CD6 C64@G6CJ E:> 6
t __
, 6G6CD6 C64@G6CJ 492 C
86
Q __
.#
, 6G T 8 U
V =I / I < T W U
V H / I < Qi <'Qt XD
- 66 7:8FC
6 7@C82 E6 492 C
86 A2 C2 > 6E6C567:? :E
:@?
A2 86 IPB081N06L3 G IPP084N06L3 G
1 Power dissipation
2 Drain current
P a\a4S"T 8#
I 94S"T 8 V =I"
100
/
60
90
50
80
70
40
I D [A]
P tot [W]
60
50
30
40
20
30
20
10
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94S"V 9I T 8 U D 4(
Z aU@84S"t ]#
A2 C2 > 6E6C t ]
A2 C2 > 6E6C
D 4t ]'T
103
101
=
:> :E
65 3 J @? DE
2 E6
_R`V`aN[PR
10
XD
2
XD
100
Z thJC [K/W]
XD
>D
I D [A]
200
101
>D
98
(&-
(&*
(&)
(&((&(*
10
-1 (&()
D:? 8=
6 AF=
D6
100
10-1
10-1
10-2
100
101
102
V DS [V]
, 6G 10-5
10-4
10-3
10-2
10-1
100
t p [s]
A2 86 IPB081N06L3 G IPP084N06L3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94S"V 9I T W U
R 9I"\[#4S"I 9 T W U
A2 C
2 > 6E6C V =I
A2 C2 > 6E6C
V =I
200
17
/
/
/
/
16
180
/
/
/
/
15
160
14
140
120
I D [A]
R DS(on) [m ]
13
/
100
80
/
12
11
10
9
/
8
/
60
40
/
/
7
20
6
/
0
5
0
1
2
3
4
5
0
50
100
V DS [V]
150
200
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94S"V =I L
V 9Ih5*hI 9hR 9I"\[#ZNe
g S`4S"I 9 T W U
A2 C
2 > 6E6C T W
120
100
100
80
80
g fs [S]
I D [A]
60
60
40
40
20
20
U
U
0
0
0
2
4
6
, 6G 0
50
100
150
I D [A]
V GS [V]
A2 86 IPB081N06L3 G IPP084N06L3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9I"\[#4S"T W I 9 V =I"aU#4S"T W V =I4V 9I
V =I
/
A2 C2 > 6E6C
I9
20
3
18
2.5
16
14
12
10
V GS(th) [V]
R DS(on) [m ]
2
ZNe
8
X
1.5
+,t6
af]
1
6
4
0.5
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
11 Typ. capacitances
C 4S"V 9I V =I
/ f 60
100
140
180
T j [°C]
12 Forward characteristics of reverse diode
' " K
I <4S"V I9#
A2 C2 > 6E6C
TW
104
103
8V``
8\``
103
102
10
U U
I F [A]
C [pF]
U
2
8_``
U 101
101
100
0
20
40
60
V DS [V]
, 6G 0
0.5
1
1.5
2
V SD [V]
A2 86 IPB081N06L3 G IPP084N06L3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6I4S"t 6K R =I "
V =I4S"Q TNaR I 9 A2 C
2 > 6E6C T W"`aN_a#
A2 C2 > 6E6C
V 99
100
AF=
D65
10
8
U
U
U
/
6
I AS [A]
V GS [V]
/
/
10
4
2
0
1
0.1
1
10
100
0
1000
10
30
40
50
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
V 7H"9II#4S"T W I 9
20
16 Gate charge waveforms
>
70
V =I
Qg
V BR(DSS) [V]
65
60
V T `"aU#
55
Q T "aU#
Q `d
Q T`
50
-60
-20
20
60
100
140
Q g ate
Q TQ
180
T j [°C]
, 6G A2 86 IPB081N06L3 G IPP084N06L3 G
PG-TO220-3
, 6G A2 86 IPB081N06L3 G IPP084N06L3 G
PG-TO263 (D²-Pak)
, 6G A2 86 IPB081N06L3 G IPP084N06L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
, 6G A2 86
Similar pages