Infineon IPP09N03LA Optimos 2 power-transistor Datasheet

IPB09N03LA
IPI09N03LA, IPP09N03LA
OptiMOS®2 Power-Transistor
Product Summary
Features
• Ideal for high-frequency dc/dc converters
• N-channel
V DS
25
V
R DS(on),max (SMD version)
8.9
mΩ
ID
50
A
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
• 175 °C operating temperature
• dv /dt rated
Type
Package
Ordering Code
Marking
IPB09N03LA
P-TO263-3-2
Q67042-S4151
09N03LA
IPI09N03LA
P-TO262-3-1
Q67042-S4152
09N03LA
IPP09N03LA
P-TO220-3-1
Q67042-S4153
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C1)
50
T C=100 °C
46
Unit
A
Pulsed drain current
I D,pulse
T C=25 °C2)
350
Avalanche energy, single pulse
E AS
I D=45 A, R GS=25 Ω
75
mJ
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage3)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.3
±20
V
63
W
-55 ... 175
°C
55/175/56
page 1
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.4
minimal footprint
-
-
62
6 cm2 cooling area4)
-
-
40
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
25
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=20 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=25 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A
-
12.4
15.5
mΩ
V GS=4.5 V, I D=30 A,
SMD version
-
12.1
15.1
V GS=10 V, I D=30 A
-
7.7
9.2
V GS=10 V, I D=30 A,
SMD version
-
7.4
8.9
-
1
-
Ω
21
42
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
1)
Current is limited by bondwire; with an R thJC=2.4 K/W the chip is able to carry 64 A.
2)
See figure 3
3)
T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 2
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1240
1649
-
530
704
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
81
122
Turn-on delay time
t d(on)
-
9
13
Rise time
tr
-
88
132
Turn-off delay time
t d(off)
-
22
33
Fall time
tf
-
4.2
6
Gate to source charge
Q gs
-
4.4
5.8
Gate charge at threshold
Q g(th)
-
2.0
2.6
Gate to drain charge
Q gd
-
3.1
4.7
Switching charge
Q sw
-
5.5
7.9
Gate charge total
Qg
-
10
14
Gate plateau voltage
V plateau
-
3.5
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
9
12
Output charge
Q oss
V DD=15 V, V GS=0 V
-
11
15
-
-
50
-
-
350
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics5)
V DD=15 V, I D=25 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.98
1.2
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
5)
T C=25 °C
A
See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
70
60
60
50
40
I D [A]
P tot [W]
40
30
20
20
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operation area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
10
limited by on-state
resistance
1 µs
10 µs
1
Z thJC [K/W]
I D [A]
100
100 µs
DC
1 ms
10
0.5
0.2
0.1
0.05
0.1
0.02
10 ms
0.01
single pulse
1
0.01
0.1
1
10
100
10
0 -5
100-4
10-3
0
10 -20
10-10
10 0 1
t p [s]
V DS [V]
Rev. 1.3
010-6
page 4
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
80
3.2 V
10 V
70
3.5 V
3.8 V
4.1 V
4.5 V
4.5 V
25
60
20
4.1 V
R DS(on) [mΩ]
I D [A]
50
40
3.8 V
30
15
10
3.5 V
20
10 V
5
3.2 V
10
3V
2.8 V
0
0
0
1
2
0
3
20
40
V DS [V]
60
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
100
70
90
60
80
50
70
g fs [S]
I D [A]
60
50
40
30
40
30
20
20
10
175 °C
10
25 °C
0
0
0
1
2
3
4
5
20
40
60
80
I D [A]
V GS [V]
Rev. 1.3
0
page 5
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
18
2.5
16
2
14
200 µA
98 %
V GS(th) [V]
R DS(on) [mΩ]
12
10
typ
8
1.5
20 µA
1
6
4
0.5
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. Capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
10000
1000
25 °C
1000
100
Ciss
Coss
175°C 98%
IF [A]
C [pF]
175 °C
25°C 98%
100
10
Crss
1
10
0
5
10
15
20
25
30
V DS [V]
Rev. 1.3
page 6
0.0
0.5
1.0
1.5
2.0
VSD [V]
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
25 °C
100 °C
150 °C
5V
20 V
V GS [V]
IAV [A]
8
10
6
4
2
1
0
1
10
100
1000
0
10
20
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
29
V GS
28
Qg
27
V BR(DSS) [V]
26
25
24
V g s(th)
23
22
Q g (th)
21
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.3
page 7
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
Package Outline
P-TO263-3-2: Outline
Footprint
Packaging
Dimensions in mm
Rev. 1.3
page 8
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
P-TO262-3-1: Outline
P-TO220-3-1: Outline
Packaging
Dimensions in mm
Rev. 1.3
page 9
2003-12-18
IPB09N03LA
IPI09N03LA, IPP09N03LA
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St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact your
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
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Rev. 1.3
page 10
2003-12-18
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