Infineon IPP100N04S2-04 Optimosâ® power-transistor Datasheet

IPB100N04S2-04
IPP100N04S2-04
OptiMOS® Power-Transistor
Product Summary
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
V DS
40
V
R DS(on),max (SMD version)
3.3
mΩ
ID
100
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TO263-3-2
• Green package (lead free)
PG-TO220-3-1
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB100N04S2-04
PG-TO263-3-2
SP0002-19061
PN0404
IPP100N04S2-04
PG-TO220-3-1
SP0002-19056
PN0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
100
Unit
A
100
Pulsed drain current2)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse2)
E AS
I D=80A
810
mJ
Gate source voltage4)
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
Rev. 1.0
T C=25 °C
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IPB100N04S2-04
IPP100N04S2-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.5
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=40 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=80 A,
-
2.8
3.6
mΩ
V GS=10 V, I D=80 A,
SMD version
-
2.5
3.3
Rev. 1.0
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IPB100N04S2-04
IPP100N04S2-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
5300
-
-
2200
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
580
-
Turn-on delay time
t d(on)
-
27
-
Rise time
tr
-
46
-
Turn-off delay time
t d(off)
-
56
-
Fall time
tf
-
33
-
Gate to source charge
Q gs
-
26
37
Gate to drain charge
Q gd
-
46
80
Gate charge total
Qg
-
125
172
Gate plateau voltage
V plateau
-
4.9
-
V
-
-
100
A
-
-
400
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=2.2 Ω
pF
ns
Gate Charge Characteristics2)
V DD=32 V, I D=100 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
-
66
80
ns
Reverse recovery charge2)
Q rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
-
153
190
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 210A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagram 13
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
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IPB100N04S2-04
IPP100N04S2-04
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 4 V
I D = f(T C); V GS ≥ 10 V
350
120
300
100
250
200
I D [A]
P tot [W]
80
150
60
40
100
20
50
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
1 µs
0.5
10 µs
100 µs
100
10-1
0.1
I D [A]
Z thJC [K/W]
1 ms
0.05
10-2
10
0.01
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-7
single pulse
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5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
400
12
10V
5.5V
350
6.5V
10
300
8
250
R DS(on) [mΩ]
I D [A]
6.0V
200
150
6
6V
5.5V
4
6.5V
100
10V
5.0V
2
50
0
0
2
4
6
8
0
10
0
20
40
V DS [V]
60
80
100
120
I D [A]
7 Typ. transfer characteristics
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
200
200
180
160
150
140
g fs [S]
I D [A]
120
100
100
80
60
50
40
175 °C
20
25 °C
-55 °C
0
0
1
2
3
4
5
6
7
Rev. 1.0
0
50
100
150
200
I D [A]
V GS [V]
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9 Typ. Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 80 A; VGS = 10 V
parameter: I D
5
4
3.5
3
1250µA
250µA
2.5
V GS(th) [V]
R DS(on) [mΩ]
4
3
2
1.5
2
1
0.5
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
104
103
Ciss
Coss
I F [A]
C [pF]
102
103
Crss
102
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.0
25 °C
175 °C
101
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
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13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 100A pulsed
parameter: I D = 80A
900
12
800
8V
32V
10
700
600
E AS [mJ]
8
V GS [V]
500
400
300
6
4
200
2
100
0
0
25
75
125
0
175
40
80
120
Q gate [nC]
T j [°C]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
48
V GS
46
Qg
V BR(DSS) [V]
44
42
40
Q gate
38
Q gs
Q gd
36
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
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IPB100N04S2-04
IPP100N04S2-04
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Infineon Technologies AG
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D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-02
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