Infineon IPP100N06S3L-04 Optimos-t power-transistor Datasheet

IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
OptiMOS®-T Power-Transistor
Product Summary
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
V DS
55
V
R DS(on),max (SMD version)
3.5
mΩ
ID
100
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB100N06S3L-04
PG-TO263-3-2
SP0001-02219
3PN06L04
IPI100N06S3L-04
PG-TO262-3-1
SP0001-02211
3PN06L04
IPP100N06S3L-04
PG-TO220-3-1
SP0001-02209
3PN06L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
100
Unit
A
100
Pulsed drain current2)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse3)
E AS
I D=50 A
450
mJ
Drain gate voltage2)
V DG
55
V
Gate source voltage4)
V GS
±16
V
Power dissipation
P tot
214
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
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2006-03-14
IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.7
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=150 µA
1.2
1.6
2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=55 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=16 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=5 V, I D=59 A
-
4.9
6.2
mΩ
V GS=5 V, I D=59 A,
SMD version
-
4.6
5.9
V GS=10 V, I D=80 A
-
3.1
3.8
V GS=10 V, I D=80 A,
SMD version
-
2.8
3.5
Rev. 1.0
page 2
2006-03-14
IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
17270
-
-
2165
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
2070
-
Turn-on delay time
t d(on)
-
30
-
Rise time
tr
-
58
-
Turn-off delay time
t d(off)
-
82
-
Fall time
tf
-
55
-
Gate to source charge
Q gs
-
71
-
Gate to drain charge
Q gd
-
45
-
Gate charge total
Qg
-
241
362
Gate plateau voltage
V plateau
-
3.8
-
V
-
-
100
A
-
-
400
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=27.5 V,
V GS=10 V, I D=80 A,
R G=2 Ω
pF
ns
Gate Charge Characteristics2)
V DD=11 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
0.6
0.9
1.3
V
Reverse recovery time2)
t rr
V R=27.5 V, I F=I S,
di F/dt =100 A/µs
-
-
-
ns
Reverse recovery charge2)
Q rr
-
-
-
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 176 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagrams 12 and 13.
4)
Qualified at -5V and +16V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-14
IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
1 Power dissipation
2 Drain current
P tot=f(T C); V GS ≥ 4 V
I D=f(T C); V GS ≥ 4 V
120
250
100
200
80
I D [A]
P tot [W]
150
60
100
40
50
20
0
0
0
50
100
150
0
200
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
100
0.5
1 µs
limited by on-state
resistance
10 µs
100 µs
1 ms
10-1
I D [A]
Z thJC [K/W]
100
0.1
0.05
0.01
10-2
10
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-6
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IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
300
10 V
12
6V
3.5 V
4V
10
5V
200
R DS(on) [mΩ]
I D [A]
8
4.5 V
100
4.5 V
6
5V
6V
4
4V
10 V
3.5 V
2
3V
0
0
0
2
4
6
8
0
20
40
60
80
100
120
140
180
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 4V
R DS(on) = f(T j); I D = 80 A; V GS = 10 V
parameter: T j
200
8
-55 °C
25 °C
150
6
R DS(on) [mΩ]
I D [A]
175 °C
100
50
2
0
0
1
2
3
4
5
-60
-20
20
60
100
T j [°C]
V GS [V]
Rev. 1.0
4
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2006-03-14
IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
3
2.5
Ciss
1500µA
C [pF]
V GS(th) [V]
2
1.5
150µA
104
Coss
1
Crss
0.5
103
0
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
20
25
30
V DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AV = f(t AV)
parameter: T j
parameter: T j(start)
103
1000
102
100
I F [A]
I AV [A]
25°C
175 °C
150°C
25 °C
101
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.0
100°C
1
10
100
1000
t AV [µs]
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2006-03-14
IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
1000
66
25 A
64
800
62
700
60
600
58
500
V BR(DSS) [V]
E AS [mJ]
900
50 A
400
300
56
54
52
100 A
200
50
100
48
0
46
0
50
100
150
200
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 80 A pulsed
parameter: V DD
12
11 V
V GS
44 V
10
Qg
V GS [V]
8
6
4
2
Q gate
Q gs
Q gd
0
0
50
100
150
200
250
300
350
Q gate [nC]
Rev. 1.0
page 7
2006-03-14
IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
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For information on the types in question, please contact your nearest Infineon Technologies office.
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Rev. 1.0
page 8
2006-03-14
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