IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ™ "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 0( J 1&/ Y" /( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD 54 Q) 2 6B55 @<1D 9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<9 3 1D9? >C Q" 1<? 75> 6B55 13 3 ? B49 >7 D? # Type #) ) ' ' ! #) # ' ' ! #) ' ' ! Package E=%ID**(%+ E=%ID*.*%+ E=%ID*.+%+ Marking )((C(0C )((C(0C (1/C(0C Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9 6954 Parameter Symbol Conditions ? >D 9>E? EC 4B 19> 3 EBB5>D I9 T 8 T T 8 Value *# /( T Unit 6 -) ) E<C54 4B19> 3 EBB5>D*# I 9$\aX_Q T 8 T *0( F1<1>3 85 5>5B7I C9 >7<5 @E<C5+# E 6H I 9 R =H " 1( Y@ !1D5 C? EB35 F? <D175 V =H q*( J ) ? G5B49CC9@1D9? > P `[` )(( K ( @5B1D9>7 1>4 CD? B 175 D5=@5B1DEB5 T V T _`S T 8 T # 3 <9=1D 93 3 1D57? BI #' # T )# $ , - 1>4 $ , , 55 697EB 5 6? B=? B 5 45D 19<54 9 >6? B =1D9? > +# , 55 697EB 5 6? B=? B 5 45D 19<54 9>6? B =1D 9? > *# + 5F @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. % % )&- Thermal characteristics -85B=1<B5C9 CD1>3 5 :E>3 D9 ? > 3 1C5 R `T@8 -85B=1<B5C9 CD1>3 5 R `T@6 =9>9 =1<6? ? D@B9>D 3 = * 3 ? ? <9 >7 1B51,# :E>3 D 9? > 1=2 9 5>D A'K % % ,( 0( % % Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954 Static characteristics B19> C? EB35 2 B51;4? G> F? <D175 V "7G#9HH V =H . I 9 = !1D5 D8B5C8? <4 F? <D175 V =H"`T# V 9H4V =H I 9 V * *&0 +&- 05B? 71D5 F? <D175 4B 19> 3 EBB5>D I 9HH V 9H . V =H T V T . % (&) ) V 9H . V =H T V T . % )( )(( . % ) )(( Z6 % 0&, )( Y" V =H . I 9 % ))&( )0&* V =H . I 9 "HB9# % 0&) 1&/ V =H . I 9 "HB9# % )(&/ )/&1 % )&. % " +( -1 % H !1D5 C? EB35 <51;175 3 EBB5>D I =HH V =H . V 9H B19> C? EB35 ? > CD1D5 B5C9CD1>3 5 R 9H"[Z# V =H . I 9 B19> C? EB35 ? > CD1D5 B5C9CD1>3 5 R 9H"[Z# !1D5 B5C9CD 1>3 5 R= I^MZ_O[ZPaO`MZOQ g R_ ,# 5F935 ? > == H == H == 5@? HI ) 3 ? >>53 D 9? > ) 9C F5B D931<9> CD 9<<19B + 5F gV 9Hg5*gI 9gR 9H"[Z#YMd I 9 + G9D8 3 =* ? >5 <1I5B @175 J r6 V=D 893; 3 ? @@5B1B 51 6? B4B 19> IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. % )0)( *,)( % ,1( .-* Dynamic characteristics #>@ED3 1@13 9D1>3 5 C U__ V =H . V 9H f & " J . ( ED@ED3 1@13 9 D1>3 5 C [__ + 5F5BC5 DB1>C65B3 1@13 9D1>3 5 C ^__ % *( % -EB> ? > 45<1I D9=5 t P"[Z# % ), % + 9C5 D9 =5 t^ % ,. % -EB> ? 6645<1I D9=5 t P"[RR# % ** % tR % - % !1D5 D? C? EB35 3 81B75 Q S_ % 1 % !1D5 D? 4B19> 3 81B75 Q SP % - % % )( % 1<<D9 =5 V 99 . V =H . I 9 R = " \< Z_ !1D5 81BS5 81B13 D5B9 CD 93C-# V 99 . I 9 V =H D? . Z8 , G9D389 >7 3 81B75 Q _c !1D5 3 81B75 D? D 1< QS % *. +- !1D5 @<1D51E F? <D 175 V \XM`QMa % -&* % ( ED@ED3 81B75 Q [__ % +- ,/ Z8 % % /( 6 % % *0( % )&( )&* J % -/ % Z_ % )(* % Z8 V 99 . V =H . J Reverse Diode 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB 5>D IH 9? 45 @E<C5 3 EBB 5>D I H$\aX_Q 9? 45 6? BG1B4 F? <D175 V H9 + 5F5BC5 B53 ? F5BI D9 =5 t ^^ + 5F5BC5 B53 ? F5BI 3 81B 75 Q ^^ -# + 5F T 8 T V =H . I < T V T V G . I < Pi <'Pt VC , 55 697EB 5 6? B71D5 3 81B 75 @1B1=5D5B4569>9D 9? > @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 1 Power dissipation 2 Drain current P `[`4R"T 8# I 94R"T 8 V =H" 120 . 80 60 I D [A] P tot [W] 80 40 40 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9H T 8 T D 4( Z `T@84R"t \# @1B1=5D5B t \ @1B1=5D5B D 4t \'T 103 101 <9=9D54 2 I ? > CD1D 5 ^Q_U_`MZOQ VC VC 102 100 (&- Z thJC [K/W] I D [A] VC =C =C 101 (&* (&) (&(- 10-1 98 (&(* (&() C9>7<5 @E<C5 100 10 10-2 -1 10 0 10 1 10 2 V DS [V] + 5F 10-5 10-4 10-3 10-2 10-1 100 t p [s] @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9H T V T R 9H"[Z#4R"I 9 T V T @1B 1=5D5B V =H @1B1=5D5B V =H 280 20 . . . . . . . 240 16 200 R DS(on) [m ] . I D [A] 160 . 120 12 . . 8 . 80 . 4 40 . . 0 0 0 1 2 3 4 5 0 40 80 120 V DS [V] 160 200 240 280 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =H K V 9Hg5*gI 9gR 9H"[Z#YMd g R_4R"I 9 T V T @1B 1=5D5B T V 180 120 150 80 g fs [S] I D [A] 120 90 60 40 30 T T 0 0 0 2 4 6 8 + 5F 0 40 80 120 160 200 I D [A] V GS [V] @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T V I 9 V =H V =H"`T#4R"T V V =H4V 9H . 20 4 15 3 V V YMd V GS(th) [V] R DS(on) [m ] @1B1=5D5B I9 10 `e\ 5 2 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 11 Typ. capacitances C 4R"V 9H V =H . f 60 100 140 180 T j [°C] T j [°C] 12 Forward characteristics of reverse diode & " J I <4R"V H9# @1B1=5D5B TV 104 103 8U__ 103 102 8[__ T I F [A] C [pF] T T =1H T =1H 10 2 10 1 8^__ 101 100 0 20 40 60 80 V DS [V] + 5F 0 0.5 1 1.5 2 V SD [V] @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6J R =H " V =H4R"Q SM`Q I 9 @E<C54 @1B 1=5D5B T V"_`M^`# @1B1=5D5B V 99 100 12 . 10 . T T 8 T V GS [V] I AV [A] . 10 6 4 2 1 0 0.1 1 10 100 1000 0 10 t AV [µs] 15 Drain-source breakdown voltage V 7G"9HH#4R"T V I 9 20 30 Q gate [nC] 16 Gate charge waveforms = 90 V =H Qg 85 V BR(DSS) [V] 80 75 V S _"`T# 70 65 Q S "`T# Q _c Q S_ 60 -60 -20 20 60 100 140 Q g ate Q SP 180 T j [°C] + 5F @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G PG-TO263-3 (D²-Pak) + 5F @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G PG-TO262-3 (I²-Pak) + 5F @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G PG-TO220-3 + 5F @175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 5F @175