Infineon IPP47N10S-33 Sipmos power-transistor feature n-channel enhancement mode Datasheet

IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
SIPMOS =Power-Transistor
Product Summary
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
100
VDS
P-TO262-3-1
V
RDS(on)
33
m
ID
47
A
P-TO263-3-2
P-TO220-3-1
• Green package (lead free)
Type
Package
Ordering Code
Marking
IPP47N10S-33
PG-TO220-3-1 SP0002-25706
N1033
IPB47N10S-33
PG-TO263-3-2 SP0002-25702
N1033
IPI47N10S-33
PG-TO262-3-1 SP0002-25703
N1033
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC=25°C
47
TC=100°C
33
ID puls
188
EAS
400
Avalanche energy, periodic limited by Tjmax
EAR
17.5
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
175
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID =47 A , VDD =25V, RGS =25
mJ
kV/µs
IS =47A, VDS =0V, di/dt=200A/µs
TC=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/175/56
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2006-02-14
IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
Thermal Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
0.85
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
-
-
62
-
-
40
@ min. footprint
@ 6 cm 2 cooling area
1)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
100
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain-source breakdown voltage
V
VGS =0V, ID =2mA
Gate threshold voltage, VGS = VDS
ID = 2 mA
Zero gate voltage drain current
µA
IDSS
VDS =100V, VGS =0V, Tj =25°C
-
0.1
1
VDS =100V, VGS =0V, Tj =150°C
-
-
100
IGSS
-
10
100
nA
RDS(on)
-
25
33
m
Gate-source leakage current
VGS =20V, VDS=0V
Drain-source on-state resistance
VGS =10V, ID =33A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2006-02-14
IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
13
26
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID *RDS(on)max ,
ID =33A
Input capacitance
Ciss
VGS =0V, VDS =25V,
-
2000
2500
Output capacitance
Coss
f=1MHz
-
370
465
Reverse transfer capacitance
Crss
-
190
240
Turn-on delay time
td(on)
-
25
39
Rise time
tr
-
23
36
Turn-off delay time
td(off)
-
63
99
Fall time
tf
-
15
22.5
-
19
28.5
-
29
43.5
-
70
105
V(plateau) VDD =80V, ID=47A
-
6.03
-
V
IS
-
-
47
A
-
-
188
VDD =50V, VGS=10V,
ID =47A, RG =4.7
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =80V, ID =47A
VDD =80V, ID =47A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF =94A
-
1.1
1.5
V
Reverse recovery time
trr
VR =50V, IF =lS ,
-
100
150
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
400
600
nC
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IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
1 Power dissipation
2 Drain current
Ptot = f (TC )
ID = f (TC )
190
parameter: VGS 10 V
SPP47N10
55
W
A
160
45
140
40
120
35
ID
Ptot
SPP47N10
30
100
25
80
20
60
15
40
10
20
0
0
5
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
parameter : D = tp /T
10
10 1
3 SPP47N10
SPP47N10
K/W
A
10 0
tp = 7.1µs
Z thJC
10 µs
10 -1
DS
/I
D
ID
10 2
=V
DS
(on
)
10
-2
0.20
0.10
R
10
1
D = 0.50
100 µs
0.05
1 ms
0.02
10 -3
0.01
10 ms
single pulse
DC
10 0 -1
10
10
0
10
1
10
2
V
10
3
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
VDS
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IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
A
SPP47N10
100
Ptot = 175W
100
k j
i
90
b
4.5
h c
5.0
d
5.5
e
6.0
f
6.5
g
7.5
ID
80
g
70
f
60
50
e
40
d
30
h
8.0
i
9.0
j
9.0
k
10.0
l
20.0
vgs[V]
60
5V
5.5V
6V
6.5V
7V
7.5V
50
8V
80
70
40
9V
30
20
10V
20V
c
20
10
0
0
m
VGS [V]
a
4.0
l
RDS(on)
120
b
a
1
2
3
4
5
V
6
10
0
8
20
40
60
110
A
ID
80
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
gfs = f(ID ); Tj=25°C
parameter: gfs
35
60
A
S
50
45
25
g fs
ID
40
35
20
30
15
25
20
10
15
10
5
5
0
0
1
2
3
4
5
6
7
8
V
10
0
0
10
20
30
40
A
60
ID
VGS
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IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
9 Drain-source on-state resistance
10 Gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = 33 A, VGS = 10 V
parameter: VGS = VDS , ID = 2 mA
130
SPP47N10
5
V
110
4.4
100
4
V GS(th)
RDS(on)
m
90
80
3.6
3.2
70
2.8
60
2.4
2
50
98%
40
30
1.2
typ
0.8
10
0.4
-20
20
typ
1.6
20
0
-60
max
60
100
140
°C
min
0
-60
200
-20
20
60
100
140
Tj
V
200
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS =0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
10 3
SPP47N10
A
pF
10 2
C
IF
Ciss
10 3
10 1
Tj = 25 °C typ
Coss
Tj = 175 °C typ
Tj = 25 °C (98%)
Crss
10 2
0
5
10
15
20
25
30
V
Tj = 175 °C (98%)
40
10 0
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
VDS
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IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj )
VGS = f (QGate )
par.: ID = 47 A , VDD = 25 V, RGS = 25 parameter: ID = 47 A pulsed
650
mJ
16
SPP47N10
V
550
12
450
VGS
EAS
500
400
0,2 VDS max
10
0,8 VDS max
350
8
300
250
6
200
4
150
100
2
50
0
20
40
60
80
100
120
140
°C
180
Tj
0
0
20
40
60
80
nC
110
QGate
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
120
SPP47N10
V (BR)DSS
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100
140
°C
200
Tj
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2006-02-14
IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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Page 8
2006-02-14
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