Infineon IPP50N10S3L-16 Optimos-t power-transistor Datasheet

IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
OptiMOS®-T Power-Transistor
Product Summary
V DS
100
V
R DS(on),max (SMD version)
15.4
mΩ
ID
Features
PG-TO263-3-2
• N-channel - Enhancement mode
50
PG-TO262-3-1
A
PG-TO220-3-1
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB50N10S3L-16
PG-TO263-3-2
3N10L16
IPI50N10S3L-16
PG-TO262-3-1
3N10L16
IPP50N10S3L-16
PG-TO220-3-1
3N10L16
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V1)
Value
50
Unit
A
37
Pulsed drain current1)
I D,pulse
T C=25 °C
200
Avalanche energy, single pulse1)
E AS
I D=25A
330
mJ
Avalanche current, single pulse
I AS
50
A
Gate source voltage2)
V GS
±20
V
Power dissipation
P tot
100
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.1
55/175/56
page 1
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
-
-
1.5
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
100
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=60µA
1.2
1.7
2.4
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=80 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=16V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5V, I D=50A
-
16.1
20.9
mΩ
V GS=4.5V, I D=50A,
SMD version
-
15.8
20.6
V GS=10 V, I D=50 A
-
13.1
15.7
V GS=10 V, I D=50 A,
SMD version
-
12.8
15.4
Rev. 1.1
page 2
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
3215
4180
-
730
949
Dynamic characteristics1)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
63
95
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
28
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
9
12
Gate to drain charge
Q gd
-
8
12
Gate charge total
Qg
-
49
64
Gate plateau voltage
V plateau
-
3.7
-
V
-
-
50
A
-
-
200
0.6
1
1.2
V
-
80
-
ns
-
185
-
nC
V GS=0V, V DS=25V,
f =1MHz
V DD=20 V, V GS=10 V,
I D=50 A, R G=3.5 Ω
pF
ns
Gate Charge Characteristics1)
V DD=80 V, I D=70 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current1)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
Reverse recovery time1)
t rr
V R=50V, I F=I S,
di F/dt =100A/µs
Reverse recovery charge1)
Q rr
1)
Defined by design. Not subject to production test.
2)
Qualified with VGS = +20/-5V.
T C=25°C
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V; SMD
120
60
100
50
80
40
I D [A]
P tot [W]
1 Power dissipation
60
30
40
20
20
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
100
0.5
10 µs
100
Z thJC [K/W]
I D [A]
100 µs
1 ms
0.1
10-1
0.05
0.01
10
10-2
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.1
10-6
page 4
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
200
36
10 V
5V
180
3V
3.5 V
4V
160
4.5 V
140
28
R DS(on) [mΩ]
I D [A]
120
100
4V
80
20
60
4.5 V
3.5 V
40
5V
20
3V
10 V
0
12
0
1
2
3
4
5
0
20
40
V DS [V]
60
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 50 A; V GS = 10 V; SMD
parameter: T j
150
30
-55 °C
25 °C
175 °C
25
I D [A]
R DS(on) [mΩ]
100
20
15
50
10
0
1
2
3
4
5
V GS [V]
Rev. 1.1
5
-60
-20
20
60
100
140
180
T j [°C]
page 5
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
2.5
Ciss
2
C [pF]
300 µA
V GS(th) [V]
60 µA
1.5
103
Coss
102
Crss
1
0.5
101
0
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
V DS [V]
T j [°C]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: T j(start)
103
100
102
10
25 °C
I F [A]
I AV [A]
100 °C
101
175 °C
25 °C
0.6
0.8
1
100
0.1
0
0.2
0.4
1
1.2
1.4
V SD [V]
Rev. 1.1
150 °C
0.1
1
10
100
1000
t AV [µs]
page 6
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
115
600
12.5 A
500
110
V BR(DSS) [V]
E AS [mJ]
400
300
25 A
105
100
200
50 A
95
100
90
0
25
75
125
-55
175
-15
T j [°C]
25
65
105
145
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 50 A pulsed
parameter: V DD
10
V GS
9
Qg
8
7
V GS [V]
6
20 V
80 V
5
V g s(th)
4
3
2
Q g (th)
Q sw
1
Q gs
0
0
10
20
30
Q gate
Q gd
40
Q gate [nC]
Rev. 1.1
page 7
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2008-04-09
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
Revision History
Rev. 1.1
Changes
Date
Version
1.1
Page 1: VGS changed from ±16V
08.04.2008 to ±20V
1.1
08.04.2008 Page 3: Footnote 2) added
1.1
Page 1: EAS changed from 264mJ
09.04.2008 to 330mJ
page 9
2008-04-09
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