ISC IPP65R380C6 N-channel mosfet transistor Datasheet

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IPP65R380C6,IIPP65R380C6
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.38Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Provide all benefits of a fast switching SJ MOSFET while not
sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
10.6
A
IDM
Drain Current-Single Pulsed
29
A
PD
Total Dissipation @TC=25℃
83
W
Tj
Max. Operating Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
isc website:www.iscsemi.cn
1
MAX
UNIT
1.5
℃/W
62
℃/W
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IPP65R380C6,IIPP65R380C6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID =1mA
650
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =0.32mA
2.5
RDS(on)
Drain-Source On-Resistance
IGSS
TYP
MAX
UNIT
V
3.5
V
VGS=10V; ID=3.2A
0.38
Ω
Gate-Source Leakage Current
VGS=20V; VDS=0V
0.1
μA
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
1
μA
VSD
Diode forward voltage
IF=4.9A; VGS = 0V
isc website:www.iscsemi.cn
2
0.9
V
isc & iscsemi is registered trademark
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