IRF IPS1031S Intelligent power low side switch Datasheet

Data Sheet No. PD60237_B
IPS1031(S)(R)
INTELLIGENT POWER LOW SIDE SWITCH
Features
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Product Summary
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
ESD protection
Optimized Turn On/Off for EMI
Diagnostic on the input current
Rds(on)
50mΩ (max.)
Vclamp
36V
Ishutdown
18A (typ.)
Packages
Description
The IPS1031(S)(R) is a three terminal Intelligent Power
Switch (IPS) that features a low side MOSFET with overcurrent, over-temperature, ESD protection and drain to
source active clamp. This device offers protections and
the high reliability required in harsh environments. The
switch provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165°C or
when the drain current reaches 18A. The device restarts
once the input is cycled. A serial resistance connected to
the input provides the diagnostic. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
TO-220
IPS1031
D²Pak
IPS1031S
D-Pak
IPS1031R
Typical Connection
+Bat
Load
1
Input R
Input Signal
V Diag
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D
2
S
3
Control
IN
1
IPS1031(S)(R)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Parameter
Min.
Max.
Units
Vds
Vds cont.
Vin
Isd cont.
Maximum drain to source voltage
Maximum continuous drain to source voltage
Maximum input voltage
Max. diode continuous current (limited by thermal dissipation)
Maximum power dissipation (internally limited by thermal protection)
Rth=5°C/W IPS1031
Rth=40°C/W IPS1031S 1” sqr. footprint
Rth=50C/W IPS1031R 1” sqr. footprint
Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω
Between drain and source
Other combinations
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω
Between drain and source
Other combinations
Max. storage & operating temperature junction temperature
Lead soldering temperature (10 seconds)
-0.3
-0.3
⎯
36
28
6
4
V
V
V
A
⎯
⎯
⎯
25
3.1
2.5
W
⎯
⎯
4
3
⎯
⎯
⎯
0.5
0.3
150
300
°C
°C
Typ.
Max.
Units
50
3.9
60
40
3.9
70
50
3.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
°C/W
Pd
ESD
Tj max.
Tsoldering
-40
kV
Thermal Characteristics
Symbol
Parameter
Rth1
Rth2
Rth1
Rth2
Rth3
Rth1
Rth2
Rth3
Thermal resistance junction to ambient IPS1031 TO-220 free air
Thermal resistance junction to case IPS1031 TO-220
Thermal resistance junction to ambient IPS1031S D²Pak std. footprint
Thermal resistance junction to ambient IPS1031S D²Pak 1” sqr. footprint
Thermal resistance junction to case IPS1031S D²Pak
Thermal resistance junction to ambient IPS1031R D-Pak std. footprint
Thermal resistance junction to ambient IPS1031R D-Pak 1” sqr. footprint
Thermal resistance junction to case IPS1031R D-Pak
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
VIH
VIL
High level input voltage
Low level input voltage
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V
Rth=5°C/W IPS1031
Rth=40°C/W IPS1031S 1” sqr. footprint
Rth=50C/W IPS1031R 1” sqr. footprint
Recommended resistor in series with IN pin to generate a diagnostic
Max recommended load inductance (including line inductance) (1)
Max. frequency (switching losses = conduction losses)
Max. input rising time
Ids
Rin
Max L
Max F
Max. t rise
Min.
Max.
4.5
0
5.5
0.5
⎯
⎯
⎯
9.5
3.3
3
10
50
1.5
1
0.5
⎯
⎯
⎯
Units
A
kΩ
µH
kHz
µs
(1) Higher inductance is possible if maximum load current is limited - see figure 11
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2
IPS1031(S)(R)
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol
Parameter
Rds(on)
ON state resistance Tj=25°C
ON state resistance Tj=150°C (2)
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
Drain to source clamp voltage 2
IN to source pin clamp voltage
Input threshold voltage
Idss1
Idss2
V clamp1
V clamp2
Vin clamp
Vth
Min.
Typ.
Max.
⎯
⎯
⎯
⎯
50
95
10
20
⎯
40
76
0.1
0.2
39
40
6.5
1.7
Min.
Typ.
Max.
Units
3
6
20
6
10
20
70
15
0.7
30
40
200
30
µs
⎯
mJ
Typ.
Max.
36
⎯
5.5
Units
mΩ
µA
⎯
42
7.5
V
⎯
Test Conditions
Vin=5V, Ids=8A
Vcc=14V, Tj=25°C
Vcc=28V, Tj=25°C
Id=20mA
Id=1A
Iin=1mA
Id=10mA
Switching Electrical Characteristics
Vcc=14V, Resistive load=1.5Ω, Rinput=0Ω, Vin=5V, Tj=25°C
Symbol
Parameter
Tdon
Tr
Tdoff
Tf
Eon + Eoff
Turn-on delay time to 20%
Rise time 20% to 80%
Turn-off delay time to 80%
Fall time 80% to 20%
Turn on and off energy
⎯
Test Conditions
See figure 2
Protection Characteristics
Symbol
Tsd
Isd
OV
Vreset
Treset
Parameter
Over temperature threshold
Over current threshold
Over voltage protection (not active when
the device is ON )
IN protection reset threshold
Time to reset protection
Min.
⎯
Units
°C
A
V
150(2)
12
34
165
18
37
⎯
15(2)
1.7
50
200
V
µs
Min.
Typ.
Max.
Units
15
150
32
230
70
350
24
⎯
⎯
Test Conditions
See figure 1
See figure 1
Vin=0V
Diagnostic
Symbol
Parameter
Iin, on
Iin, off
ON state IN positive current
OFF state IN positive current
( after protection latched )
µA
Test Conditions
Vin=5V
Vin=5V
(2) Guaranteed by design
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IPS1031(S)(R)
Lead Assignments
2 - Drain
2 - Drain
1- In
2- D
3- S
1 2 3
D²Pak – D Pak
1
2
3
TO220
Functional Block Diagram
All values are typical
DRAIN
37V
IN
75Ω
43V
15kΩ
Q
Tj > 165°C
2kΩ
6.5V
150kΩ
Vds > O.V.
S
R
I > Isd
SOURCE
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4
IPS1031(S)(R)
All curves are typical values. Operating in the shaded area is not recommended.
Vin
Ids
t<T reset
80%
t>T reset
Ishutdown
Vin
Isd
20%
Tr-in
80%
Ids
Tj
Tsd
165°C
20%
Tshutdown
Td on
Td off
Tf
Tr
Vdiag
Vds
normal
fault
Figure 1 – Timing diagram
Figure 2 – IN rise time & switching definitions
T clamp
Vin
L
Rem : During active clamp,
Vload is negative
V load
R
Ids
D
Vds clamp
IN
5V
Vds
+
14V
-
Vin
0V
Vcc
Vds
S
Ids
See Application Notes to evaluate power dissipation
Figure 3 – Active clamp waveforms
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Figure 4 – Active clamp test circuit
5
IPS1031(S)(R)
200%
150%
100%
50%
0%
0
1
2
3
4
5
6
Rds(on), Drain-to-Source On Resistance
(Normalized)
Rds(on), Drain-to-Source On Resistance
(normalized)
200%
150%
100%
50%
-50
0
50
100
150
Tj, junction temperature (°C)
Vin, input voltage (V)
Figure 5 – Normalized Rds(on) (%) Vs Input
voltage (V)
Figure 6 - Normalized Rds(on) (%) Vs Tj (°C)
140%
25
Isd, normalized I shutdown (%)
120%
Ids, output current
20
15
10
I limit
5
I shutdown
100%
80%
60%
40%
20%
0%
0
0
1
2
3
4
5
Vin, input voltage (V)
Figure 7 – Current limitation and current
shutdown Vs Input voltage (V)
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6
-50
0
50
100
150
Tj, junction temperature (°C)
Figure 8 – Normalized I shutdown (%) Vs
junction temperature (°C)
6
IPS1031(S)(R)
30
40
5°C/W
10°C/W
1" sq footprint
std footprint
50°C/W 25°C ambient
50°C/W 85°C ambient
30
Ids, output current (A)
Ids, cont. Output current (A)
25
20
15
10
5
0
-50
50°C/W -40°C ambient
20
10
0
0
50
100
150
0.1
Tamb, Ambient temperature (°C)
10
100
Protection response time (s)
Figure 10 – Ids (A) Vs over temperature
protection response time (s)
Figure 9 – Max. continuous output current (A)
Vs Ambient temperature (°C)
100
100
Zth, transient thermal impedance (°C/W)
Ids, output current (A)
1
10
1
0.001
0.01
0.1
Inductive load (mH)
Figure 11 – Max. ouput current (A)
Vs Inductive load (mH)
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1
10
1
0.1
0.01
1E-05 0.0001 0.001
0.01
0.1
Time (s)
1
10
Figure 12 – Transient thermal impedance (°C/W)
Vs time (s)
7
100
IPS1031(S)(R)
200
200
150
I on
I latch
100
50
0
-50
0
50
100
Tj, junction temperature (°C)
Figure 13 – Input current (µA) On and Off
Vs junction temperature (°C)
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150
Tsd, over temperature shutdown (°C)
Ion, Ioff, input durrent (µA)
250
180
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
Vin, input voltage (V)
Figure 14 – Over temperature shutdown (°C)
Vs input voltage (V)
8
6
IPS1031(S)(R)
Case Outline – TO-220 AB
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9
IPS1031(S)(R)
Case Outline - D²Pak (SMD-220)
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10
IPS1031(S)(R)
Case Outline – D-Pak
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11
IPS1031(S)(R)
Tape & Reel - D²Pak (SMD220)
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12
IPS1031(S)(R)
Tape & Reel - D-Pak
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice.
This product is designed and qualified for the Automotive [Q100] market.
9/22/2005
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