Seme LAB IRF044SMD N-channel power mosfet Datasheet

SEME
IRF044SMD
LAB
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
3 .6 0 (0 .1 4 2 )
M a x .
3
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
1
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
0 .7 6
(0 .0 3 0 )
m in .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
2
60V
34A
0.040W
FEATURES
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
SMD1 – Surface Mount Package
Pad 1 – Gate
Pad 2 – Drain
• SIMPLE DRIVE REQUIREMENTS
Pad 3 – Source
Note: IRFNxxx also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
34A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
21A
IDM
Pulsed Drain Current 1
136A
PD
Power Dissipation @ Tcase = 25°C
75W
Linear Derating Factor
0.6W/°C
2
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
TL
Package Mounting Surface Temperature (for 5 sec)
RqJC
RqJ–PCB
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
340mJ
4.5V/ns
–55 to 150°C
300°C
1.67°C/W
4°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 25V , L ³ 0.3mH , RG = 25W , Peak IL = 34A , Starting TJ = 25°C
3) @ ISD £ 34A , di/dt £ 100A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 9.1W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
SEME
IRF044SMD
LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
BVDSS
Test Conditions
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
RDS(on)
ID = 1mA
VGS(th) Gate Threshold Voltage
1
Max.
V / °C
VGS = 10V
ID = 21A
0.040
VGS = 10V
ID = 34A
0.050
VDS = VGS
ID = 250mA
2
VDS ³ 15V
IDS = 21A
17
VGS = 0
V
(W)
S(W
VDS = 0.8BVDSS
25
TJ = 125°C
250
mA
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
–100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
2400
Coss
Output Capacitance
VDS = 25V
1100
Crss
Reverse Transfer Capacitance
f = 1MHz
230
Qg
Total Gate Charge 1
Qgs
Gate – Source Charge 1
ID = 34A
88
ID = 34A
6.7
15
VDS = 0.5BVDSS
18
52
Qgd
Gate – Drain (“Miller”) Charge
td(on)
Turn–On Delay Time
tr
Rise Time
td(off)
Turn–Off Delay Time
tf
Fall Time
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
nC
nC
23
VDD = 30V
130
ID = 34A
81
RG = 9.1W
ns
79
34
2
ISM
Pulse Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IF = 34A
Qrr
Reverse Recovery Charge
di / dt £ 100A/ms VDD £ 50V
ton
Forward Turn–On Time
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
0.8
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
2.8
136
IS = 34A
nA
pF
39
VDS = 0.5BVDSS
1
W
4
gfs
VGS = 10V
Unit
V
0.68
ID = 1mA
1
Typ.
60
Reference to 25°C
Static Drain – Source On–State
Resistance
VGS = 0
Min.
TJ = 25°C
VGS = 0
TJ = 25°C
A
2.5
V
220
ns
1.6
mC
Negligible
nH
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
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