isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF236 DESCRIPTION ·Drain Current ID=8.1A@ TC=25℃ ·Drain Source Voltage: VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) ·Nanosecond Switching speeds APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Drivers for high-power bipolar switching transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 275 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 8.1 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ MAX UNIT 1.67 ℃/W 80 ℃/W ID Ptot Tj Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 www.fineprint.cn isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF236 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 275 VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 RDS(ON) Drain-Source On-stage Resistance IGSS TYPE MAX UNIT V 4.0 V VGS=10V; ID=4.1A 0.45 Ω Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=275V; VGS=0 250 uA VSD Diode Forward Voltage IS=8.1A; VGS=0 2.0 V Ciss Input Capacitance 600 VDS=25V; Crss Reverse Transfer Capacitance VGS=0V; 52 pF fT=1MHz Coss tr Output Capacitance 180 Rise Time 23 35 9.1 14 RGS=15Ω td(on) Turn-on Delay Time ID=5A; ns VDD=90V; tf td(off) Fall Time Turn-off Delay Time isc website：www.iscsemi.cn PDF pdfFactory Pro RL=15Ω 2 www.fineprint.cn 19 29 31 47 isc & iscsemi is registered trademark