ISC IRF237 Nanosecond switching speed Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRF237
DESCRIPTION
·Drain Current ID=6.5A@ TC=25℃
·Drain Source Voltage: VDSS= 275V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.68Ω(Max)
·Nanosecond Switching speeds
APPLICATIONS
·Switching power supplies
·Switching converters,motor driver,relay driver
·Drivers for high-power bipolar switching transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
275
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
6.5
A
Total Dissipation@TC=25℃
75
W
Max. Operating Junction Temperature
150
℃
-55~150
℃
MAX
UNIT
1.67
℃/W
80
℃/W
ID
Ptot
Tj
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
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isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRF237
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID=250µA
275
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID=250µA
2.0
RDS(ON)
Drain-Source On-stage Resistance
IGSS
TYPE
MAX
UNIT
V
4.0
V
VGS=10V; ID=4.1A
0.68
Ω
Gate Source Leakage Current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=275V; VGS=0
250
uA
VSD
Diode Forward Voltage
IS=6.5A; VGS=0
2.0
V
Ciss
Input Capacitance
600
VDS=25V;
Crss
Reverse Transfer Capacitance
VGS=0V;
52
pF
fT=1MHz
Coss
tr
Output Capacitance
180
Rise Time
23
35
9.1
14
RGS=15Ω
td(on)
Turn-on Delay Time
ID=5A;
ns
VDD=90V;
tf
td(off)
Fall Time
Turn-off Delay Time
isc website:www.iscsemi.cn
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RL=15Ω
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