IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage Ο ID Continuous Drain Current (TC=25 C) Drain Current-Pulsed Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ , TSTG A 37 + _ 20 2 O 1 O 1 O O3 A V 113 Ο PD V 6.5 1 O IDM Units 100 9.2 Ο Continuous Drain Current (TC=100 C ) VGS Value mJ 9.2 A 4.5 mJ 6.5 V/ns Total Power Dissipation (TC=25 C ) 45 W Linear Derating Factor 0.3 W/ C Operating Junction and Ο - 55 to +175 Storage Temperature Range Ο TL Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic R θ JC Typ. Max. R θ CS Junction-to-Case -- 3.31 Case-to-Sink 0.5 -- R θ JA Junction-to-Ambient -- 62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRF520A Electrical Characteristics (TC=25 C unless otherwise specified) Ο Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆ BV/ ∆ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units TJBreakdown Voltage Temp. Coeff. Gate Threshold Voltage 100 -- -- -- 0.12 -- -- 4.0 -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.2 Ω VGS=10V,ID=4.6A 4 O Ω VDS=40V,ID=4.6A 4 O Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- 6.35 -- Ciss Input Capacitance -- 370 480 Coss Output Capacitance -- 95 110 Crss Reverse Transfer Capacitance -- 38 45 td(on) Turn-On Delay Time -- 14 40 Rise Time -- 14 40 Turn-Off Delay Time -- 36 90 Fall Time -- 28 70 Qg Total Gate Charge -- 16 22 Qgs Gate-Source Charge -- 2.7 -- Gate-Drain(“Miller”) Charge -- 7.8 -- tf Qgd Ο 2.0 Forward Transconductance td(off) VGS=0V,ID=250 µ A See Fig 7 V/ C ID=250µ A VDS=5V,ID=250 µ A V V Gate-Source Leakage , Forward gfs tr Test Condition nA µ A pF VGS=20V VGS=-20V VDS=100V Ο VDS=80V,TC=150 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, ns RG=18Ω See Fig 13 4 O 5 O VDS=80V,VGS=10V, nC ID=9.2A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current ISM Pulsed-Source Current VSD Diode Forward Voltage trr Qrr Min. Typ. Max. Units -- -- 9.2 -- -- 37 -- -- 1.5 V TJ=25 C ,IS=9.2A,VGS=0V Reverse Recovery Time -- 98 -- ns TJ=25 C ,IF=9.2A Reverse Recovery Charge -- 0.34 -- µ C diF/dt=100A/ µ s 1 O 4 O A Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature o L=2mH, IAS=9.2A, V DD=25V, R G=27Ω , Starting T J =25 C _ µ < ISD < _ 9.2A, di/dt 300A/ s, V DD < _ BVDSS , Starting T J =25 oC _2% Pulse Test : Pulse Width = 250 µs, Duty Cycle < Essentially Independent of Operating Temperature 1 O 2 O O3 4 O 5 O Test Condition Integral reverse pn-diode in the MOSFET Ο Ο 4 O N-CHANNEL POWER MOSFET IRF520A Fig 1. Output Characteristics [A] [A] Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 101 ID , Drain Current ID , Drain Current Fig 2. Transfer Characteristics VGS 0 10 @ Notes : 1. 250µs Pulse Test 2. TC = 25 oC 10-1 100 175 oC 100 25 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V - 55 oC 10-1 101 2 4 [A] IDR , Reverse Drain Current VGS = 10 V 0.2 VGS = 20 V o @ Note : TJ = 25 C 0.0 0 10 20 10 30 101 100 40 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 175 oC 25 oC 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage [pF] C iss Ciss= Cgs+ Cgd ( Cds= shorted) Coss= Cds+ Cgd Crss= Cgd 400 C oss @ Notes : 1. VGS = 0 V 200 C rss 00 10 2. f = 1 MHz 1 10 VDS , Drain-Source Voltage [V] [V] ID , Drain Current [A] 600 Capacitance 8 Fig 4. Source-Drain Diode Forward Voltage 10-1 0.4 VGS , Gate-Source Voltage RDS(on) , [Ω ] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current 0.4 0.1 6 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] 0.3 3. 250µs Pulse Test VDS = 20 V 10 VDS = 50 V VDS = 80 V 5 @ Notes : ID = 9.2 A 0 0 5 10 15 QG , Total Gate Charge [nC] 20 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage IRF520A 1.2 1.1 1.0 0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 o 150 175 Fig 8. On-Resistance vs. Temperature 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 0.5 2. ID = 4.6 A 0.0 -75 200 -50 -25 [A] ID , Drain Current 100 µs 101 1 ms 10 ms DC 100 25 50 75 100 125 150 175 200 Fig 10. Max. Drain Current vs. Case Temperature Operation in This Area is Limited by RDS(on) @ Notes : 1. TC = 25 oC 10 8 6 4 2 2. TJ = 175 oC 3. Single Pulse 10-1 100 101 0 25 102 50 75 100 125 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response D=0.5 100 @ Notes : 1. Zθ J C (t)=3.31 o C/W Max. 0.2 /t2 2. Duty Factor, D=t 1 0.1 3. TJ M -TC =PD M *Zθ J C (t) 0.05 ZθJC(t) , ID , Drain Current [A] Fig 9. Max. Safe Operating Area 102 0 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] 10- 1 PDM 0.02 0.01 t1 single pulse t2 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 150 175 N-CHANNEL POWER MOSFET IRF520A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 12V VGS Same Type as DUT 50KΩ Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (I G) Resistor Charge Current Sampling (I D) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated V DS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRF520A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.