IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage 28 19.8 Ο Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TL A 1 O 110 + _ 20 A O 1 O 1 O O3 523 mJ 28 A 2 V 10.7 mJ 6.5 V/ns Total Power Dissipation (TC=25 C ) 107 W Linear Derating Factor 0.71 W/ C Ο TJ , TSTG V Continuous Drain Current (TC=100 C) IDM PD Units 100 Continuous Drain Current (TC=25 C) Ο ID Value Operating Junction and Ο - 55 to +175 Storage Temperature Range Ο Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. R θJC Junction-to-Case -- 1.4 R θCS Case-to-Sink 0.5 -- R θJA Junction-to-Ambient -- 62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRF540A Electrical Characteristics (TC=25 C unless otherwise specified) Ο Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units 100 -- -- V Ο 0.11 -- V C 2.0 -- 4.0 V Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.052 Ω VGS=10V,ID=14A 4 O -- Ω VDS=40V,ID=14A 4 O Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance -- 22.56 Ciss Input Capacitance -- 1320 1710 Coss Output Capacitance -- 325 380 Crss Reverse Transfer Capacitance -- 148 170 td(on) Turn-On Delay Time -- 18 50 Rise Time -- 18 50 Turn-Off Delay Time -- 90 180 Fall Time -- 56 120 Qg Total Gate Charge -- 60 78 Qgs Gate-Source Charge -- 10.8 -- Qgd Gate-Drain(“Miller”) Charge -- 27.9 -- td(off) tf VGS=0V,ID=250 µ A ID=250 µ A See Fig 7 -- Breakdown Voltage Temp. Coeff. gfs tr Test Condition nA µA pF VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V Ο VDS=80V,TC=150 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A, ns RG=9.1 Ω See Fig 13 4 O 5 O VDS=80V,VGS=10V, nC ID=28A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 28 ISM Pulsed-Source Current 1 O -- -- 110 VSD Diode Forward Voltage 4 O -- -- 1.5 V TJ=25 C ,IS=28A,VGS=0V trr Reverse Recovery Time -- 132 -- TJ=25 C ,IF=28A Qrr Reverse Recovery Charge -- 0.63 -- ns µC A Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=1mH, I AS=28A, V DD=25V, R G=27 Ω, Starting T J =25 C O O3 ISD <_ 28A, di/dt <_ 400A/ µs, V DD<_ BVDSS , Starting T J =25 oC _2% 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET Ο Ο diF/dt=100A/ µs 4 O N-CHANNEL POWER MOSFET IRF540A Fig 1. Output Characteristics 102 Fig 2. Transfer Characteristics 102 VGS ID , Drain Current ID , Drain Current [A] 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V [A] Top : 101 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 100 10-1 100 175 oC 101 25 oC - 55 oC 3. 250 µs Pulse Test 100 101 2 4 [A] IDR , Reverse Drain Current RDS(on) , [Ω] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current 0.08 VGS = 10 V 0.04 VGS = 20 V 0.02 @ Note : TJ = 25 oC 30 60 8 10 90 Fig 4. Source-Drain Diode Forward Voltage 102 101 120 @ Notes : 1. VGS = 0 V 175 oC 25 oC 100 0.4 0.00 0 6 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] 0.06 @ Notes : 1. VGS = 0 V 2. VDS = 40 V 0.6 0.8 ID , Drain Current [A] 2. 250 µs Pulse Test 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage C iss [V] 2000 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VGS , Gate-Source Voltage Capacitance [pF] 2500 1500 C oss 1000 @ Notes : 1. VGS = 0 V C rss 2. f = 1 MHz 500 00 10 101 VDS , Drain-Source Voltage [V] VDS = 20 V 10 VDS = 50 V VDS = 80 V 5 @ Notes : ID =28.0 A 0 0 10 20 30 40 50 QG , Total Gate Charge [nC] 60 70 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage IRF540A @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 3.0 2.5 2.0 1.5 1.0 2. ID = 14.0 A 0.0 -75 200 -25 0 25 50 75 100 125 150 175 200 TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 30 [A] [A] -50 TJ , Junction Temperature [ oC] 103 Operation in This Area is Limited by R DS(on) ID , Drain Current 25 102 10 µs 100 µs 1 ms 10 ms 101 DC @ Notes : 1. TC = 25 oC 100 10-1 100 20 15 10 5 2. TJ = 175 oC 3. Single Pulse 101 0 25 102 50 75 100 125 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response 100 D=0.5 @ Notes : 1. Zθ J C (t)=1.4 o C/W Max. 2. Duty Factor, D=t1 /t2 0.2 0.1 10- 1 3. TJ M -TC =PD M *Zθ J C (t) 0.05 PDM 0.02 0.01 t1 single pulse t2 θ Z JC(t) , ID , Drain Current @ Notes : 1. VGS = 10 V 0.5 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 150 175 N-CHANNEL POWER MOSFET IRF540A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 12V VGS Same Type as DUT 50K Ω Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (I G) Resistor Charge Current Sampling (I D) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated V DS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRF540A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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