PD-94287B HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range 20 12 80 75 0.6 ±20 78 12 7.5 3.0 -55 to 150 Package Mounting Surface Temp Weight 300 (for 5s) 1.0 (Typical) A W W/°C V mJ A mJ V/ns °C g For footnotes refer to the last page www.irf.com 1 02/18/10 IRF5NJ3315 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage 150 — — V — 0.18 — V/°C — — 0.08 Ω 2.0 12 — — — — — — 4.0 — 25 250 V S ∆BVDSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 95 11 47 25 60 75 60 — C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1370 300 160 — — — Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 12A à nC VDS = VGS, ID = 250µA VDS = 15V, IDS = 12A à VDS = 150V ,VGS=0V VDS = 120V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 12A VDS = 120V ns VDD = 75V, ID = 12A, VGS =10V, RG = 5.1Ω µA nA nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 20 80 1.3 260 1.7 Test Conditions A V ns µC Tj = 25°C, IS = 12A, VGS = 0V à Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs VDD ≤ 25V à Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 1.67 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRF5NJ3315 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 10 4.5V 20µs PULSE WIDTH TJ = 150 °C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP TJ = 25 ° C TJ = 150 ° C 10 1 4.0 V DS = 15 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com ID = 20A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5NJ3315 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2000 1500 Ciss 1000 Coss Crss 500 0 1 10 20 VGS , Gate-to-Source Voltage (V) 2500 12 8 4 VDS , Drain-to-Source Voltage (V) 20 40 60 80 100 1000 ID, Drain-to-Source Current (A) TJ = 150 ° C ISD , Reverse Drain Current (A) 0 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 10 TJ = 25 ° C 1 V GS = 0 V 0.8 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 FOR TEST CIRCUIT SEE FIGURE 13 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 0.4 VDS = 120V VDS = 75V VDS = 30V 16 0 100 ID = 12A OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 100µ s 1ms 1 0.1 1.6 10ms Tc = 25°C Tj = 150°C Single Pulse 1 DC 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5NJ3315 20 RD V DS V GS ID , Drain Current (A) 16 D.U.T. RG 12 + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 TC , Case Temperature ( °C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJ-PCB ) 10 D = 0.50 1 0.20 P DM 0.10 0.02 0.1 t1 SINGLE PULSE ( THERMAL RESPONSE ) 0.05 t2 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5NJ3315 15V VDS D.U.T. RG VGS 20V DRIVER L + V - DD IAS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 140 120 TOP 100 BOTTOM ID 5.4A 7.6A 12A 80 60 40 20 0 V(BR)DSS 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ 12V .2µF .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5NJ3315 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, Starting TJ = 25°C, L= 1.1mH Peak IAS = 12A, VGS =10V, RG= 25Ω ISD ≤ 12A, di/dt ≤ 120A/µs, VDD ≤ 150V, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2010 www.irf.com 7