PD - 94058 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y1310CM 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y1310CM 100V RDS(on) 0.044Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 18* 18* 72 100 0.8 ±20 210 18 10 3.8 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 01/17/01 IRF5Y1310CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 100 — — V VGS = 0V, ID = 250µA — 0.114 — V/°C Reference to 25°C, ID = 1.0mA — — 0.044 Ω 2.0 14 — — — — — — 4.0 — 25 250 V S( ) IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 110 15 58 19 85 65 54 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1872 463 234 — — — VGS = 10V, ID = 18A ➃ VDS = VGS, ID = 250µA VDS = 25V, IDS = 18A ➃ VDS = 100V ,VGS=0V VDS = 80V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 80V Ω µA nA nC VDD = 50V, ID = 18A, VGS =10V, RG = 3.6Ω ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 18* 72 1.3 270 1.8 Test Conditions A V ns µC Tj = 25°C, IS = 18A, VGS = 0V ➃ Tj = 25°C, IF = 18A, di/dt ≥ 100A/µs VDD ≤30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.25 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5Y1310CM 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 4.5V 20µs PULSE WIDTH T = 25 C 1 10 4.5V 10 100 2.5 TJ = 150 ° C 10 15 V DS = 50V 20µs PULSE WIDTH 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C 7.0 10 100 Fig 2. Typical Output Characteristics 100 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 ° J 1 0.1 VDS , Drain-to-Source Voltage (V) 1 4.0 20µs PULSE WIDTH T = 150 C ° J 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP ID = 18A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5Y1310CM VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2500 Ciss 2000 1500 1000 Coss 500 C rss 0 1 10 ID = 18A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 20 VDS , Drain-to-Source Voltage (V) 40 60 80 100 120 140 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 100 ISD , Reverse Drain Current (A) C, Capacitance (pF) 3000 20 VGS , Gate-to-Source Voltage (V) 3500 TJ = 150 ° C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) 1.8 10 1ms Tc = 25°C Tj = 150°C Single Pulse 10ms 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRF5Y1310CM 35 LIMITED BY PACKAGE VGS 30 I D , Drain Current (A) RD VDS D.U.T. RG + 25 -VDD VGS 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) IRF5Y1310CM 400 ID 8.0A 11.4A BOTTOM 18A TOP 300 200 100 0 25 V (B R )D S S 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5Y1310CM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 18A, di/dt ≤ 340 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 1.3mH Peak IAS = 18A, VGS =10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 100V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/01 www.irf.com 7