IRF IRF5Y31N20 Avalanche energy rating Datasheet

PD - 94349A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y31N20
200V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRF5Y31N20
200V
RDS(on)
0.092Ω
ID
18A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
18*
14
72
100
0.8
±20
170
18
10
1.7
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
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1
01/07/02
IRF5Y31N20
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
200
—
—
V
VGS = 0V, ID = 250µA
—
0.27
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.092
Ω
3.0
14
—
—
—
—
—
—
5.5
—
25
250
V
S( )
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
100
32
46
30
148
50
27
—
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2480
370
73
—
—
—
VDS = VGS, ID = 250µA
VDS =15V, IDS = 14A ➃
VDS = 200V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 18A
VDS = 160V
Ω
l Ciss
C oss
C rss
VGS = 10V, ID = 14A ➃
µA
nA
nC
VDD = 100V, ID = 18A,
VGS = 10V, RG = 2.5Ω
ns
nH
pF
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
18*
72
1.3
300
2.3
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 18A, VGS = 0V ➃
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.25
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5Y31N20
100
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
6.0V
0.1
1
10
6.0V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH,T J= 25°C
0.1
10
0.1
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.5
10
TJ = 25 ° C
1
15
V DS = 50V
20µs PULSE WIDTH
7.0
7.5
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
6.5
10
100
Fig 2. Typical Output Characteristics
100
0.1
6.0
1
VDS, Drain-to-Source Voltage (V)
ID = 18A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5Y31N20
C, Capacitance (pF)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
Ciss
2000
C
oss
1000
Crss
20
VGS , Gate-to-Source Voltage (V)
4000
10
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
20
40
60
80
100
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ISD , Reverse Drain Current ( Α )
VDS = 160V
VDS = 100V
VDS = 40V
16
0
1
ID = 18A
1000
ID, Drain-to-Source Current (A)
T J = 150°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
T J = 25°C
1
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
10ms
0.1
0.1
0.0
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100µs
10
2.0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5Y31N20
24
LIMITED BY PACKAGE
VGS
20
I D , Drain Current (A)
RD
V DS
D.U.T.
RG
+
-V DD
16
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
12
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5Y31N20
1 5V
D R IV E R
L
VD S
D .U .T.
RG
+
V
- DD
IA S
VGS
20V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
400
ID
8.0A
11.4A
BOTTOM 18A
TOP
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
.3µF
QG
10V
D.U.T.
QGS
+
V
- DS
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF5Y31N20
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 18A, di/dt ≤ 100 A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 1.0 mH
Peak IAS = 18A, VGS =10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 200V, TJ ≤ 150°C
Case Outline and Dimensions — TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
5.08 [.200]
4.83 [.190]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
10.92 [.430]
10.42 [.410]
1
2
1.14 [.045]
0.89 [.035]
B
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
NOTES :
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994.
CONTROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA.
3.05 [.120]
B
P IN AS S IGNME NT S
1 = GAT E
2 = DRAIN
3 = S OURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/02
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