IRF IRF5Y9540CM Avalanche energy rating Datasheet

PD - 94027A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y9540CM
100V, P-CHANNEL
Product Summary
Part Number
BVDSS
IRF5Y9540CM
-100V
RDS(on)
0.117Ω
ID
-18A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-18
-11
-72
75
0.6
±20
256
-11
7.5
4.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
C
g
For footnotes refer to the last page
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1
11/17/00
IRF5Y9540CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
—
—
V
-0.11
—
V/°C
—
0.117
Ω
—
—
—
—
-4.0
—
-25
-250
V
S( )
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = 10V, ID = -11A ➃
VDS = VGS, ID = -250µA
VDS = -50V, IDS = -11A ➃
VDS = -100V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -11A
VDS = -80V
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
5.3
IDSS
Zero Gate Voltage Drain Current
—
—
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
109
19
53
29
135
87
84
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1390
428
246
—
—
—
nA
nC
VDD = -50V, ID = -11A,
RG = 7.5Ω
ns
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
nH
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-18
-72
-1.6
220
1200
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -11A, VGS = 0V ➃
Tj = 25°C, IF = -11A, di/dt ≥ 100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.67
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5Y9540CM
100
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
1
10
-4.5V
1
20µs PULSE WIDTH
T = 150 C
°
J
0.1
0.1
10
°
J
0.1
0.1
100
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
1
2.5
TJ = 25 ° C
TJ = 150 ° C
10
1
15
V DS = -25V
20µs PULSE WIDTH
0.1
4
6
8
10
12
14
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
TOP
ID = -18A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5Y9540CM
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
2000
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
1500
Ciss
1000
Coss
Crss
500
20
-VGS , Gate-to-Source Voltage (V)
2500
10
VDS =-80V
VDS =-50V
VDS =-20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
20
-VDS , Drain-to-Source Voltage (V)
60
80
100
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I D , Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
16
0
1
ID = -11A
2.6
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5Y9540CM
20
RD
V DS
VGS
-ID , Drain Current (A)
16
D.U.T.
RG
+
12
V DD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5Y9540CM
D .U .T
RG
VD D
IA S
-20V
-10V
tp
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
600
L
VDS
ID
-5.0A
-7.0A
BOTTOM -11A
TOP
500
400
300
200
100
0
25
IAS
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-12V
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF5Y9540CM
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ -11A, di/dt ≤ -350 A/µs,
maximum junction temperature.
‚ VDD = -25 V, Starting TJ = 25°C, L= 4.2mH
Peak IAS = -11A, RG= 25Ω
„ Pulse width ≤ 400 µs; Duty Cycle ≤ 2%
VDD ≤ -100V, TJ ≤ 150°C
Case Outline and Dimensions — TO-257AA
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Data and specifications subject to change without notice. 11/00
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