isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF620R ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ MAX UNIT 3.12 ℃/W 80 ℃/W Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF620R ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX 200 2 UNIT V 4 V VGS= 10V; ID= 2.5A 0.8 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS=0 250 uA VSD Forward On-Voltage IS= 5A; VGS=0 1.8 V Ciss Input Capacitance 600 pF Coss Output Capacitance 300 pF Crss Reverse Transfer Capacitance 80 pF MAX UNIT 40 ns 60 ns 100 ns 60 ns VDS=25V,VGS=0V, F=1.0MHz ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr Td(off) Tf PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time VDD=100V,ID=5.0A VGS=10V,RGEN=9.1Ω RGS=9.1Ω Fall Time isc website：www.iscsemi.cn PDF pdfFactory Pro CONDITIONS 2 MIN TYP isc & iscsemi is registered trademark www.fineprint.cn