isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF627 ·FEATURES ·RDS(on) =1.5Ω ·3.3A and 275V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 275 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 3.3 A IDM Drain Current-Single Plused 13 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ MAX UNIT 3.12 ℃/W 80 ℃/W Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF627 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 250 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 2 4 V VGS= 10V; ID= 1.4A 1.5 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 275V; VGS=0 250 uA VSD Forward On-Voltage IS= 3.8A; VGS=0 1.8 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz 340 pF 110 pF 32 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr PARAMETER CONDITIONS TYP MAX UNIT 11 17 ns 24 36 ns Turn-off Delay Time 21 32 ns Fall Time 13 20 ns Turn-on Delay Time Rise Time MIN VDD=125V,ID=3.8A RG=18Ω Td(off) Tf isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn