PD - 94107
Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Description
IRF644N
IRF644NS
IRF644NL
l
HEXFET® Power MOSFET
D
RDS(on) = 240mΩ
G
Fifth Generation HEXFET ® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
VDSS = 250V
ID = 14A
S
TO-220AB
IRF644N
D2Pak
IRF644NS
TO-262
IRF644NL
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
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Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
14
9.9
56
150
1.0
± 20
180
8.4
15
7.9
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
1
3/15/01
IRF644N/644NS/644NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
250
–––
–––
2.0
8.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.33
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
21
30
17
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1060
140
38
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
240
mΩ VGS = 10V, ID = 8.4A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 8.4A
25
VDS = 250V, VGS = 0V
µA
250
VDS = 200V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
54
ID = 8.4A
9.2
nC
VDS = 200V
26
VGS = 10V, See Fig. 6 and 13
–––
VDD = 125V
–––
ID = 8.4A
ns
–––
RG = 6.2Ω
–––
VGS = 10V, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
14
––– –––
showing the
A
G
integral reverse
56
––– –––
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 14A, VGS = 0V
––– 165 250
ns
TJ = 25°C, IF = 14A
––– 1.0 1.6
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
2
Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)**
–––
0.50
–––
–––
1.0
–––
62
40
Units
°C/W
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IRF644N/644NS/644NL
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4.5V
1
10
4.5V
1
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.5
TJ = 175 ° C
TJ = 25 ° C
10
V DS = 50V
20µs PULSE WIDTH
6
8
10
11
13
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100
4
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
1
15
ID = 14A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF644N/644NS/644NL
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
VGS , Gate-to-Source Voltage (V)
20
10000
10
ID = 8.4A
16
12
8
4
0
1
10
0
100
24
36
48
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
12
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
TJ = 175 ° C
10
0.8
1.1
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS = 200V
V DS = 125V
V DS = 50V
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
1.5
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF644N/644NS/644NL
15
RD
VDS
VGS
ID , Drain Current (A)
12
D.U.T.
RG
+
-VDD
9
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
1 5V
L
VD S
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRF644N/644NS/644NL
300
ID
3.4A
5.9A
BOTTOM 8.4A
TOP
240
180
120
60
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF644N/644NS/644NL
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF644N/644NS/644NL
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
-B 4.69 ( .18 5 )
4.20 ( .16 5 )
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
8
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
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IRF644N/644NS/644NL
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
15 .4 9 (.6 10)
14 .7 3 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
www.irf.com
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
9
IRF644N/644NS/644NL
TO-262 Package Outline
TO-262 Part Marking Information
10
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IRF644N/644NS/644NL
D2Pak Tape & Reel Information
TRR
1.60 (.0 63)
1.50 (.0 59)
4.10 (.16 1)
3.90 (.15 3)
F E E D D IR E C TION 1 .85 (.073)
1 .6 0 (.06 3 )
1 .5 0 (.05 9 )
1 1 .6 0 (.4 57 )
1 1 .4 0 (.4 49 )
1 .65 (.065)
0.36 8 (.01 4 5 )
0.34 2 (.01 3 5 )
1 5.42 ( .6 09 )
1 5.22 ( .6 01 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TRL
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
10 .9 0 (.4 2 9 )
10 .7 0 (.4 2 1 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6 .1 0 (.6 3 4)
1 5 .9 0 (.6 2 6)
F E ED D IR E C TIO N
27 .40 (1 .079 )
23 .90 (.9 41)
13 .50 ( .53 2)
12 .80 ( .50 4)
4
330.00
(14.173)
MAX.
60 .00 (2.362)
M IN .
NO T ES :
1. C O M FO R M S TO E IA -4 18.
2. C O N TR O LL IN G D IM E N S IO N : M ILL IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U TE R E D G E .
30 .40 (1 .19 7)
M AX .
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 5.0µH
RG = 25Ω, IAS = 8.4A. (See Figure 12)
ISD ≤ 8.4A, di/dt ≤ 378A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction
and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
This is only applied to TO-220AB package.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint & soldering techniques refer to
application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the (IRF644N) automotive [Q101]
& (IRF644NS/L) industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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11