PD -97090 IRF6614PbF IRF6614TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l l VDSS VGS RDS(on) RDS(on) 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V Qg Qgd Qgs2 Qrr Qoss Vgs(th) 6.0nC 1.4nC 5.5nC 9.5nC 1.8V tot 19nC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT DirectFET ISOMETRIC ST Description The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 Parameter e e @ 10V f ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12.7 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10.1 ID @ TC = 25°C Continuous Drain Current, VGS IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy IAR Avalanche Current g h ID = 12.7A 16 12 TJ = 125°C 8 TJ = 25°C 4 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 Fig 1. Typical On-Resistance Vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com 102 VGS, Gate-to-Source Voltage (V) Typical R DS (on) (mΩ) 20 g A 55 22 mJ 10.2 A 12 ID= 10.2A 10 VDS = 32V VDS= 20V 8 6 4 2 0 0 10 20 30 40 50 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 10.2A. 1 5/5/06 IRF6614PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Conditions Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 40 ––– ––– ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 38 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 5.9 8.3 ––– 7.1 9.9 VGS = 0V, ID = 250µA V mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 12.7A i VGS = 4.5V, ID = 10.2A i VDS = VGS, ID = 250µA VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 71 ––– ––– Qg Total Gate Charge ––– 19 29 Pre-Vth Gate-to-Source Charge ––– 5.9 ––– VDS = 20V VGS = 4.5V IGSS Qgs1 VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 10V, ID = 10.2A Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– Qgd Gate-to-Drain Charge ––– 6.0 ––– ID = 10.2A Qgodr Gate Charge Overdrive ––– 5.7 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 7.4 ––– Qoss Output Charge ––– 9.5 ––– nC RG Gate Resistance ––– 1.0 1.5 Ω td(on) Turn-On Delay Time ––– 13 ––– VDD = 20V, VGS = 4.5Vi tr Rise Time ––– 27 ––– ID = 10.2A td(off) Turn-Off Delay Time ––– 18 ––– tf Fall Time ––– 3.6 ––– Ciss Input Capacitance ––– 2560 Coss Output Capacitance ––– Crss Reverse Transfer Capacitance ––– nC VDS = 16V, VGS = 0V ns Clamped Inductive Load ––– VGS = 0V 370 ––– pF VDS = 20V 200 ––– ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current Min. ––– Typ. Max. Units ––– Pulsed Source Current MOSFET symbol 53 (Body Diode) ISM A ––– ––– Conditions showing the integral reverse 102 p-n junction diode. (Body Diode)g TJ = 25°C, IS = 10.2A, VGS = 0V i VSD Diode Forward Voltage ––– ––– 1.0 trr Reverse Recovery Time ––– 15 23 ns TJ = 25°C, IF = 10.2A Qrr Reverse Recovery Charge 8.3 nC di/dt = 100A/µs i ––– 5.5 V Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF6614PbF Absolute Maximum Ratings Parameter PD @TC = 25°C e Power Dissipation e Power Dissipation f TP Peak Soldering Temperature TJ Operating Junction and TSTG Storage Temperature Range Max. Units 2.1 W Power Dissipation PD @TA = 25°C PD @TA = 70°C 1.4 42 270 °C -40 to + 150 Thermal Resistance Parameter el Junction-to-Ambient jl Junction-to-Ambient kl Junction-to-Case fl RθJA Typ. Max. ––– 58 12.5 ––– 20 ––– ––– 3.0 Junction-to-Ambient RθJA RθJA RθJC RθJ-PCB Junction-to-PCB Mounted Linear Derating Factor 1.0 e Units °C/W ––– 0.017 W/°C 100 Thermal Response ( Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 τJ 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 Ri (°C/W) R5 R5 τC τ2 τ1 τ2 τ3 τ3 τ4 τ4 τ5 τ5 Ci= τi/Ri Ci= τi/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τ τi (sec) 0.6676 0.000066 1.0462 0.000896 1.5611 0.004386 29.282 0.68618 25.455 32 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Mounted on minimum footprint full size board with metalized Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. Rθ is measured at TJ of approximately 90°C. Used double sided cooling, mounting pad with large heatsink. Surface mounted on 1 in. square Cu board (still air). www.irf.com Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6614PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.3V 1 2.3V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 100 BOTTOM VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.3V 10 2.3V ≤ 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics Fig 5. Typical Output Characteristics 100.0 2.0 Typical R DS(on) (Normalized) ID, Drain-to-Source Current(Α) ID = 12.7A TJ = 150°C TJ = 25°C TJ = -40°C 10.0 1.0 VDS = 15V VGS = 10V 1.5 1.0 ≤ 60µs PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 0.5 4.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 60 80 100 120 140 160 30 TA= 25°C VGS = 3.0V 25 VGS = 3.5V (mΩ) Coss = Cds + Cgd DS(on) Ciss 2000 Typical R C, Capacitance (pF) 40 Fig 7. Normalized On-Resistance vs. Temperature VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 3000 20 TJ , Junction Temperature (°C) Fig 6. Typical Transfer Characteristics 4000 0 1000 VGS = 4.0V 20 VGS = 4.5V VGS = 5.0V VGS = 10V 15 10 Coss Crss 0 5 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 0 20 40 60 80 ID, Drain Current (A) Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage www.irf.com IRF6614PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100.0 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100µsec 10 1msec DC Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.6 1.0 1.4 1.8 0.01 2.2 0.10 1.00 10.00 100.00 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area 60 VGS(th) Gate threshold Voltage (V) 2.5 50 ID , Drain Current (A) 10msec 1 40 30 20 10 0 2.0 ID = 250µA 1.5 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 TJ , Junction Temperature (°C) 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature 100 EAS, Single Pulse Avalanche Energy (mJ) 0 ID 4.3A 6.4A BOTTOM 10.2A TOP 80 60 40 20 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 14. Maximum Avalanche Energy Vs. Drain Current www.irf.com 5 IRF6614PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) Qgs1 Qgs2 Fig 15a. Gate Charge Test Circuit Qgd Qgodr Fig 15b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS tp D.U.T V RGSG + V - DD IAS 20V tp A I AS 0.01Ω Fig 16c. Unclamped Inductive Waveforms Fig 16b. Unclamped Inductive Test Circuit LD VDS VDS 90% + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit 6 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6614PbF D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent - Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D G D www.irf.com S S D D 7 IRF6614PbF DirectFET Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.79 G 0.75 0.57 H 0.53 0.30 J 0.26 0.98 K 0.88 2.28 L 2.18 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.023 0.024 0.023 0.024 0.030 0.031 0.021 0.022 0.010 0.012 0.035 0.039 0.086 0.090 0.0235 0.0274 0.0008 0.0031 0.003 0.007 DirectFET Part Marking 8 www.irf.com IRF6614PbF DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7" reel, order IRF6614TR1PBF STANDARD OPTION METRIC CODE MIN MAX A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC MAX MIN MIN MAX MAX MIN N.C 6.9 12.992 177.77 N.C N.C 0.75 0.795 N.C 19.06 N.C N.C 0.53 0.504 0.50 0.520 13.5 12.8 0.059 0.059 N.C 1.5 N.C N.C 2.31 3.937 N.C 58.72 N.C N.C N.C N.C 0.53 N.C 0.724 13.50 0.47 0.488 N.C 11.9 0.567 12.01 0.47 0.469 N.C 11.9 0.606 12.01 Loaded Tape Feed Direction CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MIN MAX MAX 0.311 7.90 0.319 8.10 0.154 3.90 0.161 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.158 4.00 0.165 4.20 0.197 5.00 0.205 5.20 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/06 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/