PD - 94643A HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF7N1405 55V, N-CHANNEL Product Summary Part Number BVDSS IRF7N1405 55V RDS(on) ID 0.0053Ω 55A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range 55* 55* 220 100 0.8 ±20 245 55 10 1.8 -55 to 150 Package Mounting Surface Temp. Weight 300 (for 5s) 2.6 (Typical) A W W/°C V mJ A mJ V/ns o C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 03/16/07 IRF7N1405 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 55 — — V — 0.061 — V/°C — — 0.0053 Ω 2.0 68 — — — — — — 4.0 — 25 250 V S IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 200 40 80 20 90 200 150 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5100 1290 300 — — — µA nA nC ns nH l pF Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 55A à VDS = VGS, ID = 250µA VDS =25V, IDS = 55A à VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 28V, ID = 55A, VGS = 10V, RG = 2.4Ω Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — — — — — 55* 220 1.3 130 380 Test Conditions A V ns nC Tj = 25°C, IS = 55A, VGS = 0V à Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 1.25 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRF7N1405 1000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 100 4.5V 20µs PULSE WIDTH Tj = 25°C 4.5V 20µs PULSE WIDTH Tj = 150°C 10 10 0.1 1 10 0.1 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current ( Α) T J = 150°C T J = 25°C VDS = 25V 15 20µs PULSE WIDTH 10 4 4.5 5 5.5 6 6.5 7 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 100 1 VDS , Drain-to-Source Voltage (V) ID = 55A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7N1405 9000 6000 Ciss 4500 3000 VDS = 44V VDS = 28V VDS= 11V ID= 55A VGS , Gate-to-Source Voltage (V) 7500 C, Capacitance (pF) 12 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Coss 1500 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 10 0 100 0 VDS , Drain-to-Source Voltage (V) 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current ( Α) 60 80 100 120 140 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 T J = 150°C 100 40 Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 25°C 10 1 100µs 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1.6 1ms 10 VGS = 0V 4 20 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10ms 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7N1405 120 LIMITED BY PACKAGE V GS 100 ID , Drain Current (A) RD V DS D.U.T. RG + -V DD 80 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7N1405 15V D.U.T. RG VGS 20V DRIVER L VDS + V - DD IAS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 500 ID 24.6A 34.8A BOTTOM 55A TOP 400 300 200 100 0 25 tp 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ .2µF 12V .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF7N1405 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.16mH Peak I AS = 55A, V GS = 10V, RG= 25Ω ISD ≤ 55A, di/dt ≤ 220A/µs, VDD ≤ 55V, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2007 www.irf.com 7