PD - 97616 IRF9358PbF HEXFET® Power MOSFET VDS -30 RDS(on) max V 16.3 mΩ 23.8 mΩ Qg (typical) 19 nC ID -9.2 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) S2 1 D G2 2 S1 3 G1 4 8 D2 7 D2 D 6 D1 5 D1 SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRF9358PbF IRF9358TRPbF SO8 SO8 Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier ⇒ Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage -30 VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -9.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -7.3 IDM Pulsed Drain Current -73 PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation f f c 2.0 1.3 Linear Derating Factor 0.016 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Units V A W W/°C °C Notes through are on page 2 www.irf.com 1 1/2/11 IRF9358PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Conditions Min. Typ. Max. Units V VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA VGS = -10V, ID = -9.2A mΩ VGS = -4.5V, ID = -7.3A Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient -30 ––– ––– 0.02 ––– ––– Static Drain-to-Source On-Resistance ––– ––– 13.0 19.0 16.3 23.8 ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current -1.3 ––– ––– -1.8 -5.9 ––– IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– Gate-to-Source Reverse Leakage Forward Transconductance ––– 23 ––– ––– -2.4 V VDS = VGS, ID = -25μA ––– mV/°C VDS = -24V, VGS = 0V -1.0 μA VDS = -24V, VGS = 0V, TJ = 125°C -150 VGS = -20V -100 nA VGS = 20V 100 ––– S VDS = -10V, ID = -7.3A Total Gate Charge Total Gate Charge Gate-to-Source Charge ––– ––– ––– 19 38 5.8 ––– ––– ––– Qgd RG Gate-to-Drain Charge Gate Resistance ––– ––– 8.9 15 ––– ––– td(on) tr Turn-On Delay Time Rise Time ––– ––– 5.7 7.2 ––– ––– td(off) tf Ciss Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 146 69 1740 ––– ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 360 240 ––– ––– ΔΒVDSS/ΔTJ RDS(on) VGS(th) gfs Qg Qg Qgs h h h h h e e nC nC VDS = -15V, VGS = -4.5V, ID = - 7.3A VGS = -10V VDS = -15V ID = -7.3A Ω ns VDD = -15V, VGS = -4.5V ID = -1.0A e RG = 6.8Ω See Figs. 19a &19b VGS = 0V pF VDS = -25V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics c d Parameter Typ. Max. Units ––– ––– 210 -7.3 mJ A Conditions Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ––– ––– -2.0 ––– ––– -73 MOSFET symbol A c (Body Diode) showing the integral reverse D G p-n junction diode. S Diode Forward Voltage ––– ––– -1.2 trr Reverse Recovery Time ––– 55 83 ns TJ = 25°C, IF = -2.0A, VDD = -24V Qrr Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/μs V TJ = 25°C, IS = -2.0A, VGS = 0V e VSD Thermal Resistance Parameter RθJL Junction-to-Drain Lead RθJA Junction-to-Ambient f g Typ. Max. ––– 20 ––– 62.5 e Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9358PbF 100 100 10 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V 1 0.1 -2.5V 10 BOTTOM -2.5V 1 ≤60μs PULSE WIDTH Tj = 150°C ≤60μs PULSE WIDTH Tj = 25°C 0.1 0.01 0.1 1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID, Drain-to-Source Current(A) 1 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) TJ = 150°C 10 TJ = 25°C 1 VDS = -15V ≤60μs PULSE WIDTH 0.1 ID = -9.2A VGS = -10V 1.4 1.2 1.0 0.8 0.6 2 3 4 5 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 14 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V Coss Crss ID= -7.3A 12 10 VDS= -24V VDS= -15V VDS= -6.0V 8 6 4 2 0 100 0 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 10 20 30 40 50 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRF9358PbF 1000 -ID, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 100 100 TJ = 150°C 10 OPERATION IN THIS AREA LIMITED BY R DS (on) TJ = 25°C 1 10 TA = 25°C Tj = 150°C Single Pulse 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 -VSD , Source-to-Drain Voltage (V) 10 100 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 10 -VGS(th), Gate threshold Voltage (V) 2.5 8 -ID, Drain Current (A) 1msec 1 VGS = 0V 0.1 10msec DC 6 4 2 2.0 ID = -25μA 1.5 1.0 0 0.5 25 50 75 100 125 150 -75 -50 -25 TA , Ambient Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( ZthJA ) °C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com 50 ( Ω) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (mΩ) IRF9358PbF ID = -9.2A 40 30 TJ = 125°C 20 10 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 40 30 VGS = -4.5V 20 VGS = -10V 10 20 0 10 20 30 40 -VGS, Gate -to -Source Voltage (V) 60 70 Fig 13. Typical On-Resistance vs. Drain Current 1000 1000 ID -0.9A -1.5A BOTTOM -7.3A TOP 800 Single Pulse Power (W) 800 600 400 600 400 200 200 0 0 25 50 75 100 125 1E-5 150 1E-4 Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T * 1E-2 Driver Gate Drive + - D.U.T. ISD Waveform Reverse Recovery Current + di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode www.irf.com VDD Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% Reverse Polarity of D.U.T for P-Channel P.W. Period * • • • • 1E+0 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. 1E-1 Fig 15. Typical Power vs. Time + RG 1E-3 Time (sec) Starting TJ , Junction Temperature (°C) * 50 -ID, Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ) 50 ISD * VGS = 5V for Logic Level Devices Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 IRF9358PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 17a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 17b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 18b. Unclamped Inductive Waveforms Fig 18a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. 10% + V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19a. Switching Time Test Circuit 6 tr 90% VDS Fig 19b. Switching Time Waveforms www.irf.com IRF9358PbF SO-8 Package Outline(Mosfet Dimensions are shown in milimeters (inches) D & Fetky) DIM B 5 A 8 6 7 6 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° y 0.10 [.004] 0.25 [.010] MAX K x 45° A C 8X b MILLIMETERS MAX A 5 INCHES MIN A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 8X 0.72 [.028] 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9358PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. † Qualification Information Consumer †† Qualification level Moisture Sensitivity Level RoHS Compliant (per JEDEC JESD47F††† guidelines) MSL1 SO-8 (per JEDEC J-STD-020D†††) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2011 8 www.irf.com