IRF9530SMD MECHANICAL DATA Dimensions in mm (inches) 3 .6 0 (0 .1 4 2 ) M a x . ! VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 0 .8 9 (0 .0 3 5 ) m in . P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS -100V -8A 0.35W FEATURES 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT SMD 1 Pad 1 – Gate • HERMETICALLY SEALED Pad 2 – Drain Pad 3 – Source • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ±20V VGS Gate – Source Voltage ID Continuous Drain Current @ Tcase = 25°C 8A ID Continuous Drain Current @ Tcase = 100°C 5A IDM Pulsed Drain Current 40A PD Power Dissipation @ Tcase = 25°C 45W Linear Derating Factor 0.36W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RqJC Thermal Resistance Junction to Case 2.8°C/W max. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Prelim. 07/00 IRF9530SMD ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 100 Reference to 25°C V 0.1 ID = 1mA V / °C Static Drain – Source On–State VGS = 10V ID = 5A 0.35 Resistance VGS = 10V ID = 8A 0.4 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 5A 3 VGS = 0 VGS(th) Gate Threshold Voltage V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 860 Coss Output Capacitance VDS = 25V 350 Crss Reverse Transfer Capacitance f = 1MHz 125 Qg Total Gate Charge Qgs Gate – Source Charge ID = 8A Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 8 ISM Pulse Source Current 32 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 8A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance Semelab plc. ID = 8A VDS = 0.5BVDSS nA pF 12.5 29 1.0 6.3 2 27 nC nC 60 VDD = 50V 140 ID = 8A 140 RG = 7.5W IS = 8A W 4 gfs VGS = 10V Unit ns 140 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk A 4.7 V 300 ns 3 mC nH Prelim. 07/00