Vishay IRF9Z24STRLPBF Power mosfet Datasheet

IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
- 60
RDS(on) (Ω)
VGS = - 10 V
0.28
Qg (Max.) (nC)
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Single
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
DESCRIPTION
D2PAK (TO-263)
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2PAK is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application.
The through-hole version (IR9Z24L/SiH9Z24L) is available
for low-profile applications.
G
G
Advanced Process Technology
Surface Mount (IRF9Z24S/SiHF9Z24S)
Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L)
175 °C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead (Pb)-free Available
D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
IRF9Z24SPbF
IRF9Z24STRLPbFa
IRF9Z24STRRPbFa
IRF9Z24LPbF
SiHF9Z24S-E3
SiHF9Z24STL-E3a
SiHF9Z24STR-E3a
SiHF9Z24L-E3
IRF9Z24S
IRF9Z24STRLa
IRF9Z24STRRa
IRF9Z24L
SiHF9Z24S
SiHF9Z24STLa
SiHF9Z24STRa
SiHF9Z24L
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Currente
Pulsed Drain
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Currenta, e
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energyb, e
UNIT
V
- 11
- 7.7
A
- 44
0.40
W/°C
EAS
240
mJ
Repetitive Avalanche Currenta
IAR
- 11
A
Energya
EAR
6.0
mJ
Repetitive Avalanche
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TA = 25 °C
Maximum Power Dissipation
LIMIT
UNIT
3.7
W
60
W
V/ns
PD
TC = 25 °C
dV/dtc, e
dV/dt
- 4.5
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Peak Diode Recovery
Soldering Recommendations (Peak Temperature)
°C
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = - 11 A (see fig. 12).
c. ISD ≤ - 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z24/SiHF9Z24 data and test conditions.
THERMAL RESISTANCE RATINGS
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient
(PCB Mount)a
PARAMETER
RthJA
-
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
-
2.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
VDS
VGS = 0 V, ID = - 250 µA
MIN.
TYP.
MAX.
UNIT
- 60
-
-
V
-
- 0.056
-
V/°C
- 2.0
-
- 4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
ΔVDS/TJ
VGS(th)
Reference to 25 °C, ID = - 1
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
-
-
± 100
VDS = - 60 V, VGS = 0 V
-
-
- 100
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
IGSS
IDSS
RDS(on)
gfs
mAc
µA
-
-
0.28
Ω
VDS = - 25 V, ID = - 6.6 Ac
1.4
-
-
S
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5c
-
570
-
-
360
-
-
65
-
-
-
19
ID = - 6.6 Ab
VGS = - 10 V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
5.4
Gate-Drain Charge
Qgd
-
-
11
Turn-On Delay Time
td(on)
-
13
-
-
68
-
-
15
-
-
29
-
-
-
- 11
S
-
-
- 44
TJ = 25 °C, IS = - 11 A, VGS = 0 Vb
-
-
- 6.3
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = - 10 V
ID = - 11 A, VDS = - 480 V,
see fig. 6 and 13b, c
VDD = - 30 V, ID = - 11 A,
RG = 18 Ω, RD = 2.5 Ω, see fig. 10b
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
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MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
V
Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
100
200
ns
-
320
640
nC
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/µsb, c
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF9Z24/SiHF9Z24 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on)
tr
td(off) tf
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T.
RG
+ V DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91091.
Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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