IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Surface Mount (IRFBC40S/SiHFBC40S) 600 RDS(on) (Ω) VGS = 10 V RoHS* • Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 Qgs (nC) 8.3 • Dynamic dV/dt Rating Qgd (nC) 30 • 150 °C Operating Temperature Configuration SiHFBC20S) Single • Fast Switching • Fully Avalanche Rated D I2PAK (TO-262) Available • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) 1.2 • Lead (Pb)-free Available D2PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L/SiHFBC40L) is available for low-profile applications. G G D S S N-Channel MOSFET ORDERING INFORMATION D2PAK (TO-263) IRFBC40SPbF SiHFBC40S-E3 IRFBC40S SiHFBC40S Package Lead (Pb)-free SnPb D2PAK (TO-263) IRFBC40STRLPbFa SiHFBC40STL-E3a IRFBC40STRLa SiHFBC40STLa I2PAK (TO-262) IRFBC40LPbF SiHFBC40L-E3 IRFBC40L SiHFBC40L Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltagee VDS 600 Gate-Source Voltagee VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta,e ID UNIT V 6.2 3.9 A IDM 25 1.0 W/°C Single Pulse Avalanche Energyb, e EAS 570 mJ Repetitive Avalanche Currenta IAR 6.2 A 13 mJ Linear Derating Factor Repetitive Avalanche Energya Maximum Power Dissipation EAR TC = 25 °C TA = 25 °C Peak Diode Recovery dV/dtc, e PD dV/dt 130 3.1 3.0 W V/ns * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL LIMIT UNIT TJ, Tstg - 55 to + 150 °C 300d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12). c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBC40/SiHFBC40 data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA - 40 Maximum Junction-to-Case RthJC - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 100 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VGS = 10 V ID = 3.7 Ab VDS = 100 V, ID = 3.7 Ab µA - - 1.2 Ω 4.7 - - S - 1300 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Source Inductance LS www.vishay.com 2 VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 6.2 A, VDS = 3600 V, see fig. 6 and 13b, c VDD = 300 V, ID = 6.2 A, RG = 9.1 Ω, RD = 47 Ω,VGS = 10 V, see fig. 10b, c Between lead, and center of die contact - 160 - - 30 - - - 60 - - 8.3 - - 30 - 13 - - 18 - - 55 - - 20 - - 7.5 - pF nC ns nH Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - - 6.2 - - 25 - - 1.5 - 450 940 ns - 3.8 7.9 µC Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRFBC40/SiHFBC40 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 Fig. 2 - Typical Output Characteristics www.vishay.com 3 IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature VDS VGS RD D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 8 - Maximum Safe Operating Area Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 tr td(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 5 IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91116. Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1