IRF IRFH5204PBF Secondary side synchronous rectification Datasheet

IRFH5204PbF
HEXFET® Power MOSFET
VDS
40
V
RDS(on) max
4.3
mΩ
Qg (typical)
43
nC
RG (typical)
1.7
Ω
(@VGS = 10V)
ID
100
(@Tc(Bottom) = 25°C)
h
PQFN 5X6 mm
A
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (< 4.3 mΩ)
Low Thermal Resistance to PCB (< 1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5204TRPbF
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
IRFH5204TR2PbF
PQFN 5mm x 6mm
Tape and Reel
Note
400
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
c
g
Max.
40
± 20
22
18
100
100
400
3.6
105
Units
0.029
-55 to + 150
W/°C
h
h
V
A
W
°C
Notes  through † are on page 9
1
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IRFH5204PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Output Charge
Min.
40
–––
–––
2.0
–––
–––
–––
–––
–––
96
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.05
3.6
–––
-9.3
–––
–––
–––
–––
–––
43
9.1
4.0
14
16
18
18
Max. Units
Conditions
–––
V VGS = 0V, ID = 250uA
––– V/°C Reference to 25°C, ID = 1.0mA
4.3
mΩ VGS = 10V, ID = 50A
4.0
V
VDS = VGS, ID = 100μA
––– mV/°C
20
VDS = 40V, VGS = 0V
μA
250
VDS = 40V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
–––
S VDS = 15V, ID = 50A
65
–––
VDS = 20V
VGS = 10V
–––
nC
ID = 50A
–––
–––
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
1.7
8.4
14
18
8.3
2460
515
250
–––
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
e
Ω
ns
pF
VDD = 20V, VGS = 10V
ID = 50A
RG=1.8Ω
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
c
Typ.
–––
–––
d
Units
mJ
A
Max.
102
50
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ISM
c
VSD
trr
Qrr
ton
Min.
Typ.
Max. Units
–––
–––
100
–––
–––
h
400
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 20V
di/dt = 500A/μs
–––
–––
1.3
V
–––
30
45
ns
–––
128
192
nC
Time is dominated by parasitic Inductance
e
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
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Typ.
–––
–––
–––
–––
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Max.
1.2
15
35
22
Units
°C/W
March 12, 2015
IRFH5204PbF
1000
1000
VGS
15V
10V
7.00V
6.00V
5.50V
5.00V
4.75V
4.50V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
1
4.5V
0.1
100
BOTTOM
10
4.5V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
Tj = 150°C
1
10
0.1
100
1000
100
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60μs PULSE WIDTH
0.1
ID = 50A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
3
4
5
6
7
8
9
10
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 50A
C oss = C ds + C gd
10000
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Ciss
1000
Coss
Crss
100
12
VDS= 32V
VDS= 20V
VDS= 8V
10
8
6
4
2
0
10
1
10
0
100
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
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10
20
30
40
50
60
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
3
VGS
15V
10V
7.00V
6.00V
5.50V
5.00V
4.75V
4.50V
TOP
ID, Drain-to-Source Current (A)
TOP
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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IRFH5204PbF
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
T J = 150°C
100
T J = 25°C
10
1
100
100μsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.10
1.6
10
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
5.0
125
VGS(th) , Gate threshold Voltage (V)
Limited By Package
100
ID, Drain Current (A)
1
75
50
25
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID = 1.0A
ID = 1.0mA
ID = 500μA
ID = 150μA
ID = 100μA
0.5
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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450
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFH5204PbF
ID = 50A
10
8
T J = 125°C
6
4
T J = 25°C
2
0
ID
TOP
6.9A
16A
BOTTOM 50A
400
350
300
250
200
150
100
50
0
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
5
I AS
0.01Ω
tp
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10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRFH5204PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
6
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Qgd
Qgodr
Fig 18. Gate Charge Waveform
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IRFH5204PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5204PbF
PQFN 5x6 Outline "B" Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DES CRIPTION
CODE
Ao
Dimension design to accommodate the component width
Bo
Dimension design to accommodate the component lenght
Ko
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Pitch between s ucces sive cavity centers
W
P1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
T ype
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
(mm)
Pin 1
Quadrant
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH5204PbF
Qualification information†
Indus trial
Qualification level
(per JE DE C JE S D47F
Moisture Sensitivity Level
RoHS compliant
†
††
†††
PQFN 5mm x 6mm
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.081mH, RG = 50Ω, IAS = 50A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
Revision History
Date
12/16/2013
3/12/2015
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
• Updated data sheet with new IR corporate template
• Updated package outline and tape and reel on pages 7 and 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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