IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration Single Available • Available in Tape and Reel RoHS* COMPLIANT • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available S DESCRIPTION SOT-223 G D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free SnPb SOT-223 SOT-223 IRFL9014PbF IRFL9014TRPbFa SiHFL9014-E3 SiHFL9014T-E3a IRFL9014 IRFL9014TRa SiHFL9014 SiHFL9014Ta Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current Pulsed Drain VGS at - 10 V TC = 25 °C TC = 100 °C Currenta ID IDM V - 1.8 - 1.1 A - 14 Linear Derating Factor 0.025 Linear Derating Factor (PCB Mount)e 0.017 Single Pulse Avalanche Energyb UNIT W/°C EAS 140 mJ Repetitive Avalanche Currenta IAR - 1.8 A Repetitive Avalanche Energya EAR 0.31 mJ * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91195 S-81412-Rev. A, 07-Jul-08 www.vishay.com 1 IRFL9014, SiHFL9014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Maximum Power Dissipation TC = 25 °C Maximum Power Dissipation (PCB Mount)e TA = 25 °C Operating Junction and Storage Temperature Range UNIT 3.1 PD Peak Diode Recovery dV/dtc Soldering Recommendations (Peak Temperature) LIMIT W 2.0 dV/dt - 4.5 TJ, Tstg - 55 to + 150 V/ns °C 300d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 50 mH, RG = 25 Ω, IAS = - 1.8 A (see fig. 12). c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - 60 Maximum Junction-to-Case (Drain) RthJC - 40 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA - 60 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - - 0.059 - V/°C VGS(th) VDS = VGS, ID = 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 VDS = - 48 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 1.1 Ab VGS = - 10 V VDS = - 25 V, ID = 1.1 Ab µA - - 0.50 Ω 1.3 - - S - 270 - - 170 - - 31 - - - 12 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 3.8 Gate-Drain Charge Qgd - - 5.1 Turn-On Delay Time td(on) - 11 - tr - 63 - - 9.6 - - 31 - - 4.0 - - 6.0 - Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = - 10 V ID = - 6.7 A, VDS = - 48 V, see fig. 6 and 13b VDD = - 30 V, ID = - 6.7 A, RG = 24 Ω, RD = 4.0 Ω, see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact pF nC ns D nH G S www.vishay.com 2 Document Number: 91195 S-81412-Rev. A, 07-Jul-08 IRFL9014, SiHFL9014 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - - 1.8 - - - 14 - - - 5.5 UNIT Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current MOSFET symbol showing the integral reverse p - n junction diode IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton D A G S TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/µsb V - 80 160 ns - 0.096 0.19 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS -15 V -10 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom -4.5 V 101 - ID, Drain Current (A) 101 25 °C 150 °C 100 4.5 V - ID, Drain Current (A) Top 100 10-1 10-1 20 µs Pulse Width VDS = - 25 V 20 µs Pulse Width TC = 25 °C 4 101 100 10-1 - VDS, Drain-to-Source Voltage (V) 91195_01 91195_03 VGS -15 V Top 10-1 -10 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom -4.5 V 20 µs Pulse Width TC = 150 °C 101 100 91195_02 4.5 V RDS(on), Drain-to-Source On Resistance (Normalized) - ID, Drain Current (A) 100 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91195 S-81412-Rev. A, 07-Jul-08 6 7 8 9 10 - VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 1 - Typical Output Characteristics, TC = 25 °C 101 5 91195_04 2.5 ID = - 6.7 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFL9014, SiHFL9014 600 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 500 400 Ciss 300 Coss 200 100 Crss - ISD, Reverse Drain Current (A) Vishay Siliconix 0 100 - ID, Drain Current (A) - VGS, Gate-to-Source Voltage (V) 2.0 VDS = -30 V 12 8 4 For test circuit see figure 13 0 4 8 12 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 6.0 5.0 4.0 Operation in this area limited by RDS(on) 2 10 100 µs 5 1 ms 2 1 10 ms 5 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 0.1 16 QG, Total Gate Charge (nC) 3.0 - VSD, Source-to-Drain Voltage (V) 5 16 www.vishay.com 4 VGS = 0 V 102 VDS = -48 V 91195_06 100 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = -6.7 A 0 25 °C 91195_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 150 °C 10-1 1.0 101 - VDS, Drain-to-Source Voltage (V) 91195_05 101 91195_08 2 5 1 2 5 10 2 5 102 2 5 103 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91195 S-81412-Rev. A, 07-Jul-08 IRFL9014, SiHFL9014 Vishay Siliconix RD VDS VGS - ID, Drain Current (A) 2.0 D.U.T. RG +VDD - 10 V 1.5 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1.0 Fig. 10a - Switching Time Test Circuit 0.5 td(on) td(off) tf tr VGS 10 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91195_09 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (ZτηJC) 102 0 − 0.5 10 0.2 0.1 0.05 1 0.02 PDM 0.01 Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 0.1 10-2 10-5 91195_11 10-4 10-3 10-2 0.1 1 10 102 103 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91195 S-81412-Rev. A, 07-Jul-08 www.vishay.com 5 IRFL9014, SiHFL9014 Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T RG + V DD VDD IAS tp - 10 V 0.01 Ω tp VDS Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit EAS, Single Pulse Energy (mJ) 400 ID - 0.80 A - 1.1 A Bottom - 1.8 A Top 300 200 100 VDD = - 25 V 0 25 91195_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91195 S-81412-Rev. A, 07-Jul-08 IRFL9014, SiHFL9014 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig.14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91195. Document Number: 91195 S-81412-Rev. A, 07-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1