IRFM350 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 1 2 400V 14A 0.315W FEATURES • N–CHANNEL MOSFET 3 • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETIC ISOLATED TO-254 PACKAGE 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC • CERAMIC SURFACE MOUNT PACKAGE OPTION TO–254AA – Isolated Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current @ VGS = 10V , TC = 25°C @ VGS = 10V , TC = 100°C IDM Pulsed Drain Current PD Max. Power Dissipation @ TC = 25°C Linear Derating Factor IL Avalanche Current , Clamped 1 dv / dt Peak Diode Recovery 2 RqJC RqJA Thermal Resistance Junction – Case RqCS TJ , TSTG Thermal Resistance Case – Sink TL Lead Temperature (1.6mm from case for 10s) 1) 2) Thermal Resistance Junction – Ambient Operating Junction and Storage Temperature Range ±20V 14A 9.0A 56A 150W 1.2W / °C 14A 4V / ns 0.83°C / W 48°C / W 0.21°C / W typ. –55 to 150°C 300°C VDD = 50V , Starting TJ = 25°C , L ³ 1mH , RG = 25W , Peak IL = 27.4A ISD £ 27.4A , di/dt £ 190A / mS , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 05/00 IRFM350 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = 1mA VGS(th) Gate Threshold Voltage 2 Max. V / °C VGS = 10V ID = 9A 0.315 VGS = 10V ID = 14A 0.415 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 9A 6 VGS = 0 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance CDC Drain – Case Capacitance Qg Total Gate Charge VGS = 10V 52 110 Qgs Gate – Source Charge ID = 14A 5 18 Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 25 65 td(on) Turn– On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 660 VDS = 25V f = 1MHz 12 190 170 trr Reverse Recovery Time 2 14 56 TJ = 25°C VGS = 0 IF = 14A 2 ns 130 1 IS = 14A nC 35 RG = 2.35W Diode Forward Voltage 2 pF 250 ID = 14A VSD nA 2600 VGS = 0 VDD = 200V Pulse Source Current W 4 gfs ISM Unit V 0.46 ID = 1mA 2 Typ. 400 Reference to 25°C Static Drain – Source On–State Resistance VGS = 0 Min. TJ = 25°C di / dt £ 100A/ms VDD £ 50V Qrr Reverse Recovery Charge ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die 8.7 LS Internal Source Inductance 8.7 A 1.7 V 1200 ns 11 mC Negligible Measured from 6mm down source lead to source bond pad nH Notes 1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature 2) Pulse Test: Pulse Width £ 300ms, d £ 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 05/00