IRFN9240SMD MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 –200V –8A 0.051W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 – Source Pad 2 – Drain Pad 3 – Gate Note: IRFxxxSM also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) –8.0A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) –5.0A IDM Pulsed Drain Current 1 –32A PD Power Dissipation @ Tcase = 25°C 75W Linear Derating Factor 0.6W/°C 2 EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC RqJ–PCB Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 500mJ –5.5V/ns –55 to 150°C 300°C 1.67°C/W 4°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = –50V , L ³ 11.7mH , RG = 25W , Peak IL = –8A , Starting TJ = 25°C 3) @ ISD £ –8A , di/dt £ –150A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 9.1W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 IRFN9240SMD ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = –1mA VGS(th) Gate Threshold Voltage 1 Max. V / °C VGS = –10V ID = –5A 0.51 VGS = –10V ID = –8A 0.52 VDS = VGS ID = –250mA –2 VDS ³ –15V IDS = –5A 4.0 VGS = 0 V (W) S(W VDS = 0.8BVDSS –25 TJ = 125°C –250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = –20V –100 IGSS Reverse Gate – Source Leakage VGS = 20V 100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1200 Coss Output Capacitance VDS = –25V 570 Crss Reverse Transfer Capacitance f = 1MHz 81 Qg Total Gate Charge 1 Qgs Gate – Source Charge 1 ID = –8A 60 ID = –8A 3.0 15 VDS = 0.5BVDSS 4.5 38 Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current nC nC 35 VDD = –100V 85 ID = –8A ns 85 RG = 9.1W 65 –8 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = –8A Qrr Reverse Recovery Charge di / dt £ –100A/ms VDD £ –50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 0.8 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 2.8 –32 IS = –8A nA pF 28 VDS = 0.5BVDSS 1 W –4 gfs VGS = –10V Unit V –0.020 ID = –1mA 1 Typ. –200 Reference to 25°C Static Drain – Source On–State Resistance VGS = 0 Min. TJ = 25°C VGS = 0 TJ = 25°C A –4.6 V 440 ns 7.2 mC negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00