IRF IRFNG50 Simple drive requirement Datasheet

PD - 91556A
POWER MOSFET
SURFACE MOUNT (SMD-1)
IRFNG50
1000V, N-CHANNEL
®
HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number
IRFNG50
R DS(on)
2.0Ω
ID
5.5A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Surface mount
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
5.5
3.5
22
150
1.2
±20
860
5.5
15
1.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300(for 5 seconds)
2.6 (Typical)
C
g
For footnotes refer to the last page
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1
2/11/02
IRFNG50
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
—
—
V
VGS = 0V, ID = 1.0mA
1.4
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
—
—
—
—
2.0
2.25
4.0
—
25
250
Ω
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
200
20
110
30
44
210
60
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2400
240
80
—
—
—
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
1000
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
5.2
IDSS
Zero Gate Voltage Drain Current
—
—
µA
nA
nC
VGS = 10V, ID = 3.5A
➃
VGS = 10V, ID = 5.5A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 3.5A ➃
VDS= 800V ,VGS=0V
VDS = 800V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID =5.5A
VDS = 400V ⑤
VDD = 400V, ID = 5.5A,
VGS =10V, RG = 2.35Ω ⑤
ns
Measured from the center of drain
pad to center of source pad.
nH
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
5.5
22
1.8
1200
8.4
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 5.5A, VGS = 0V ➃
Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
0.83
Test Conditions
°C/W
For footnotes refer to the last page
2
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IRFNG50
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5.5A
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFNG50
5.5A
3a & b
4
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFNG50
V DS
VGS
RD
D.U.T.
RG
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFNG50
Peak IL = 5.5A
VDD = 50V
15V
L
VDS
D .U .T .
RG
IA S
20V
1
D R IV E R
+
- VD D
A
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
0
.2µF
.3µF
10 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFNG50
Footnotes:
➀ Repetitive Rating; Pulse width limited by
➂ ISD ≤ 5.5A, di/dt ≤ 120A/µs,
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 56mH
Peak IL = 5.5A, VGS = 10V
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
⑤ Equipment limitation
VDD ≤ 1000V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
1- DRAIN
2- GATE
3- SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
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