Seme LAB IRFNJ130N Nâ channel power mosfet Datasheet

IRFNJ130N
IRFN130SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
3.175 (0.125)
Max.
2.41 (0.095)
3.05 (0.120)
0.127 (0.005)
3
VDSS
ID(cont)
RDS(on)
10.16 (0.400)
5.72 (.225)
0.76
(0.030)
min.
1
2
100V
11A
Ω
0.19Ω
FEATURES
0.127 (0.005)
0.127 (0.005)
16 PLCS
0.50(0.020)
0.50 (0.020)
max.
7.26 (0.286)
SMD05 (TO-276AA)
IRFNJ130
PAD1 = GATE
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
PAD 2 DRAIN
PAD3 = SOURCE
• ALL LEADS ISOLATED FROM CASE
IRFN130SMD05
PAD1 = SOURCE
PAD 2 = DRAIN
PAD3 = GATE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current @ Tcase = 25°C
11A
ID
Continuous Drain Current @ Tcase = 100°C
7A
IDM
Pulsed Drain Current
44A
PD
Power Dissipation @ Tcase = 25°C
45W
Linear Derating Factor
0.36W/°C
TJ , Tstg
Operating and Storage Temperature Range
–55 to 150°C
RθJC
Thermal Resistance Junction to Case
2.8°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5831
Issue 1
IRFNJ130N
IRFN130SMD05
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS
Test Conditions
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ
RDS(on)
VGS = 0
ID = 1mA
Min.
Typ.
Max.
100
Reference to 25°C
V
0.1
V / °C
Breakdown Voltage
ID = 1mA
Static Drain – Source On–State
VGS = 10V
ID = 7A
0.19
Resistance
VGS = 10V
ID = 11A
0.22
VDS = VGS
ID = 250µA
2
VDS ≥ 15V
IDS = 7A
3
VGS = 0
VDS = 0.8BVDSS
25
TJ = 125°C
250
VGS(th) Gate Threshold Voltage
4
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
-100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
650
Coss
Output Capacitance
VDS = 25V
240
Crss
Reverse Transfer Capacitance
f = 1MHz
44
Qg
Total Gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain (“Miller”) Charge
td(on)
Turn–On Delay Time
tr
Rise Time
td(off)
Turn–Off Delay Time
tf
Fall Time
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
11
ISM
Pulse Source Current
43
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IS = 11A
Qrr
Reverse Recovery Charge
di / dt ≤ 100A/µs VDD ≤ 50V
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance
LS
Internal Source Inductance
VGS = 10V
ID = 11A
28.5
ID = 11A
1.0
6.3
VDS = 0.5BVDSS
3.8
16.6
V
(Ω)
S(Ω
µA
nA
nC
nC
30
VDD = 50V
75
ID = 11A
40
RG = 7.5Ω
IS = 11A
Ω
pF
12.8
VDS = 0.5BVDSS
Unit
ns
45
TJ = 25°C
VGS = 0
TJ = 25°C
(from 6mm down drain lead pad to centre of die)
8.7
(from 6mm down source lead to centre of source bond pad)
8.7
A
1.5
V
300
ns
3
µC
nH
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5831
Issue 1
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